The electrical and optical properties of Cd$_{0.96}$Ze$_{0.04}$Te thin films

Cd$_{0.96}$Ze$_{0.04}$Te 박막의 전기 광학적 특성

  • 김선옥 (단국대학교 물리학과, 천안, 330-714) ;
  • 현준원 (단국대학교 응용물리학과, 서울, 140-714)
  • Published : 1998.12.01

Abstract

We have investigated the crystal properties of the Cd0.96Zn0.04Te(CZT) films evaporated on the Si(100) substrates by Elecctron Beam Evaporator(EBE) techique. The compositions of the As-preared films were different about 4% of atomic ratio, The films stucture was observad to be polycrystalline in cubic phase. Diffraction peaks were notable at the substrate temperature of $300^{\circ}C$. The reflectance measurements yield $E_1$=3.25~3.29 eV $E_1$+${\Delta}_1$=3.76~3.83 eV and $E_2$=5.08 eV,showing that the films wear in cubic phase. For the film evaporated at the substrate temperature of $150^{\circ}C$, the peaks of photocurrent are at 720nm and 980nm.

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