• 센서학회지
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• 제30권5호
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• pp.279-285
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• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.

• 한국재료학회지
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• 제21권4호
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• 한국표면공학회지
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• 제35권5호
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• pp.289-294
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• 2002

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• E2M - 전기 전자와 첨단 소재
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• 제1권1호
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• pp.62-69
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• 1988

Te-thin films were highly proper material for optical recording media, but has the demerit of short archival life time due to the unstability to humidity. In order to restrain the degradation, Te$_{100-x}$Se$_{x}$ alloys adding Se stable for the humidity were fabricated. Primarily, to measure the degradation rate with varing the composition of Se to x=5, 10, 14, 25 at.% at Te$_{100-x}$ Se$_{x}$, the change of light transmittance was used in various temperature-humidity environments. As the results, it was showed that Se$_{86}$Te$_{14}$ thin was the most proper composition for the improvement of degradation restraint.int.int.

• 한국수정란이식학회:학술대회논문집
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• 한국수정란이식학회 2002년도 국제심포지엄
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• pp.79-79
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• 2002

본 연구에서는 in vitro에서 성숙된 난자의 핵성숙(Polar Body extrusion)에 소요되는 시간과 배반포 단계로의 발달능력 사이의 관계를 비교하여 조기에 발달능력을 가진 embryo를 선발할 수 있는 IVP 체계를 개발하고자 하였으며 in vitro maturation(IVM)에 따른 first polar body(PB) 형성, IVM과 IVF 시간이 oocyte의 발달에 미치는 영향과 생산된 배반포의 세포수를 평가하였다. IVM은 TCM199 배양액을 사용하였고 in vitro fertilization(IVF)은 Fer -TALP용액을 사용하였으며 in vitro culture(IVC)는 CRlaa 배양액을 사용하여 2일까지는 0.3% BSA를 3일 부터는 10%FBS와 bovine oviduct epithelial cell을 첨가하여 배양하였다. IVM 시간에 따른 PB의 출현율은 0hr(0%), 6hr(0%), 12hr(0%), 14hr(8.7%), 16hr(40.5%), 18hr(48.0%), 20hr(65%), 22(68%) 그리고 24hr(74.5%)을 보였으며 IVM 시간에 따른 cleavage 및 8cell 발달율 사이에는 유의적인 차이가 없었으나 배반포(BL) 및 8cell에서 배반포로 발달률은 18시간(BL 31$\pm$6, BL/8cell 82 $\pm$5%)에서 가장 높게 나타났으며 24시간(BL 17$\pm$2, BL/8cell 60$\pm$8%)과 유의적인 차이를 보였다(P<0.05). IVC 7일째 배반포의 총세포수와 trophoblast(TE) 세포수는 IVM 18시간(mean$\pm$S.E.; total: 131.1$\pm$34.0, TE: 97.6$\pm$29.6)에서 24시간(total: 112.2$\pm$17.5, TE: 80.1$\pm$15.6)보다 유의하게 많은 것으로 나왔으나(P<0.05) 7일째의 inner cell mass(ICM) 숫자(18hr 33.5$\pm$12.8 vs 24hr 32.1$\pm$12.0)와 8일째 ICM, TE 그리고 총 세포수에는 유의성 있는 차이가 없었다. IVM 18시간에서 PB 형성과 8cell 발달률 사이에 높은 상관성을 보였고 배반포 및 8cell에서 배반포 단계로 높은 발달률을 보였으며 생산된 배반포의 TE 숫자와 총 세포수가 유의하게 많은 것으로 나타났다. 따라서 IVM 18시간 실시하였을 경우 보다 많은 세포수를 가진 배반포 발달 가능성이 높은 embryo를 조기에 선발 가능할 것으로 사료된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.77.1-77.1
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• 2010

반도체 나노 결정은 크기와 모양에 따라 다른 광학적 전기적 성질을 보이는 독특한 특성 때문에 태양전지, 발광 다이오드, 레이저, 바이오메디컬 레이블링 등에 응용될 수 있는 저가격의 차세대 광전기 재료의 개발을 위한 구조체로 각광받고 있다. 최근에는 하나의 나노 결정에 type-II band offset을 가지는 두 개의 물질을 결합한 이종접합 나노 결정체의 연구가 활발하게 진행되고 있는데, 이는 나노 결정 내에서 빛에 의해 생성된 전하들을 공간적으로 분리해 낼 수 있는 장점을 가지고 있기 때문에 태양전지나 광촉매로의 응용에 매우 유용하다. 우리는 나노 결정과 고분자 하이브리드 태양전지의 제작에 있어서 성분과 type-II 이종접합 반도체 나노 결정의 영향을 조사하기 위하여 CdSe, CdTe, type-II CdTe/CdSe tetrapod을 합성하였다. CdSe tetrapod과 P3HT의 블렌딩에 의해 만들어진 태양전지는 AM 1.5, 100mW/$cm^2$ 조건에서 1.03%의 가장 높은 변환 효율, 그리고 415nm에서 43%의 IPCE를 나타내었다. 그리고 CdTe/CdSe type-II tetrapod 이종접합과 P3HT 블렌딩으로 만들어진 태양전지는 CdTe를 이용하여 만든 태양전지에 비해 4.4배의 변환효율과 3.9배의 단락전류를 나타내었다.

• 대한예방한의학회지
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• 제14권2호
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• pp.13-26
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• 2010

There are two different views on the relationship between "Tao Te Ching" and the life nurturing thoughts. Some researchers think that the life nurturing is a main idea of "Tao Te Ching", but others do not. By analysing the related terminologies to life nurturing thoughts in the "Tao Te Ching", we came to the conclusions as below. 1. Chapters which mentioned about the life nurturing thoughts include chapter 2, 3, 7, 8, 9, 12, 16, 19, 20, 22, 24, 30, 35, 42, 44, 46, 50, 52, 55, 73, and 81. 2. Of 21 chapters that related with the life nurturing thoughts, 19 chapters mentioned about the mind nurturing(精神養生). It showed that "Tao Te Ching" put special emphasis on the mental health in the aspect of life nurturing. 3. There are 5,283 characters in "Tao Te Ching", but only 422 characters were used to mention about the life nurturing thoughts. That could be a one proof that the life nurturing thoughts was not a main idea of "Tao Te Ching".

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.126-130
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• 1995

$CdS_{1-x}Te_{1-x}$ polycrystalline thin films were fabricated from CdS and CdTe powder by co-evaporation method at $10^{-6}$ Torr. The Optimum evaporation condition was substrate temperature $T_{s}$=$150^{\circ}C$, evaporation time t=30 min. XRD spectrums indicated that the crystal structure chanced from zinc blonde (x$\leq$0.22) to wurtzite (x$\geq$0.96) through mixed structure (0.22$\leq$0.74) as composition value x increase to CdS. Conductive type was n-type by hot point probe method. van der Pauw method was not applicable for x<0,5 due to high hall voltages, Electrical resistivity and Hall carrier mobility were decreased as x increase, while Hall carrier concentration was increased. The optical bandgap of $CdS_{1-x}Te_{1-x}$ polycrystalline thin films measure d at R.T. had quardratic form and the bowing parameter was fitted as 1.98eV for theoretical value of 2.0eV. I-V characteristics of In/CdTe/$CdS_{x}Te_{1-x}$Au Schottky diodes showed that CdS-rich one had better forward characteristics than CdTe-rich one.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1589-1591
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• 2003

The microwave dielectric properties of $TiTe_3O_8-CaF_2$ ceramics were investigated. All sample of $TiTe_3O_8-CaF_2$ ceramics were prepared by the conventional mixed oxide method, and sintered in the temperature of $730^{\circ}C{\sim}750^{\circ}C$. The structural properties of $TiTe_3O_8-CaF_2$ ceramics were investigated by the X-ray diffractor meter. According to the X-ray diffraction patterns of $TiTe_3O_8-CaF_2$ ceramics, the major phase of the cubic $TiTe_3O_8$ were presented. In the case of $1molTiTe_3O_8-0.1molCaF_2$ ceramics sintered at $740^{\circ}C$ for 5hr., the bulk density, dielectric constant, quality factor were $2.8g/cm^3$, 39.1, 36.100GHz, respectively.