• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.5
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• pp.777-785
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• 1999

For an efficient calculation of scattering matrix in mode matching techniques, mode combination has been studied in this paper. A conducting post in rectangular waveguide, which is most commonly utilized in the combline filter structure, is adopted and its scattering matrix is derived. We eliminates the TE and TM modes having little influence on result, which results in the different number of TE and TM modes in each discontinuous region.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.407-413
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• 2008

In this paper, scattering matrix for the open ended rectangular waveguide with infinite flange is derived. To validate the scattering matrix approach, load admittance $Y_{L,10}$ obtained from the present scattering matrix method is compared with the results of the previous work. The convergence for scattering matrix solution versus TE and TM mode numbers is investigated. Also far field power pattern radiated from the aperture of the waveguide is given.

• Journal of Advanced Navigation Technology
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• v.10 no.3
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• pp.198-204
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• 2006

In this paper, TE(transverse electric) scattering problems by a resistive strip grating on a grounded dielectric plane according to the strip width and grating period, the relative permittivity and thickness of dielectric layer, and incident angles of a TE plane wave are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical procedure. The induced surface current density is simply expanded in a Fourier series by using the exponential function as a simple function. The reflected power gets increased according as the relative permittivity and thickness of dielectric multilayers gets increased, the sharp variations of the reflected power are due to resonance effects were previously called wood's anomallies[7]. To verify the validity of the proposed method, the numerical results of normalized reflected power for the uniform resistivity R = 0 as a conductive strip case show in good agreement with those in the existing paper.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.3 no.2
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• pp.16-21
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• 1992

The TE-mode characteristics of scattering and reception by a flanged parallel-plate waveguide are examined. The technique of the Fourier transform is used to represent the scattered fields in the spectral domain. The simultaneous equations for the transmitted field coefficients are solved to obtain the solution in an asymptotic series form. The numerical computations are performed to illustrate the behaviors of the scattered field and the transmission coefficients versus the aperture size.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.20-24
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• 1990

A fast convergent solution to the scattering problem of a transverse electric (TE) plan wave by a periodic strip grating with a dielectric slab is considered. The present method follows from an expansion of the equivalent surface magnetic current placed over the shorted slot according to the equivalence principle in a series of Chebyshev polynomials satisfying the appropriate edge condition. To examine the accuracy and convergence of the present method, the numerical results are calculated for the reflection and transmission coefficients and compared with other results available in the literature.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.582-588
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• 2019

FeVSb1-xTex (0.02 ≤ x ≤ 0.10) half-Heusler alloys were fabricated by mechanical alloying process and subsequent vacuum hot pressing. Near single half-Heusler phases are formed in vacuum hot pressed samples but a second phase of FeSb2 couldn't be avoided. After doping, the lattice thermal conductivity in the system was shown to decrease with increasing Te concentration and with increasing temperature. The lowest thermal conductivity was achieved for FeVSb0.94Te0.06 sample at about 657 K. This considerable reduction of thermal conductivities is attributed to the increased phonon scattering enhanced by defect structure, which is formed by doping of Te at Sb site. The phonon scattering might also increase at grain boundaries due to the formation of fine grain structure. The Seebeck coefficient increased considerably as well, consequently optimizing the thermoelectric figure of merit to a peak value of ~0.24 for FeVSb0.94Te0.06. Thermoelectric properties of various Te concentrations were investigated in the temperature range of around 300~973 K.

• The Journal of the Convergence on Culture Technology
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• v.9 no.3
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• pp.619-624
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• 2023

In this paper, TE(transverse electric) scattering problems by a resistive strip grating between a double dielectric layer are analyzed by using the FGMM(fourier galerkin moment method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the resistive boundary condition is applied to analysis of the resistive strip. In order to deal with the problem of the double dielectric layer, numerical calculation was performed only when the thickness and relative permittivity of the dielectric layers had the same value. Overall, as the resistivity of the uniform resistivity increased, the current density induced in the resistive strip decreased, the reflected power decreased, and the transmitted power relatively increased. The numerical results of the structure proposed in this paper are shown in good agreement compared to the results of PMM, a numerical analysis method of the existing paper.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.4
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• pp.153-158
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• 2016

In this paper, TE(transverse electric) scattering problems by a conductive strip grating between grounded double dielectric layer are analyzed by applying the PMM(point matching method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, the scattered electromagnetic fields are expanded in a series of Floquet mode functions, and the conductive boundary condition is applied to analysis of the conductive strip. The numerical results for normalized reflected power are analyzed by according as the width and spacing of conductive strip, the relative permittivity and thickness of the double dielectric layers, and incident angles. The most normalized reflected powers of the sharp variations in minimum values are scattered in direction of the other angles except incident angle. The numerical results for the presented structure of this paper having a grounded double dielectric layer are shown in good agreement compared to those of the existing papers.