• 한국식품영양학회지
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• 제9권4호
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• pp.447-451
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• 1996

Bacillus sp. TA-11에 대한 오골계 난백 lysozyme과 일반 난백 lysozyme의 용균성을 비교분석 하였다. 오골계 난백 lysozyme의 용균활성은 Bacillus sp. TA-11를 5$0^{\circ}C$에서 18시간 정치배양한 대수기 후기의 세포에 대하여 가장 높았고, lysozyme의 농도는 0.25%가 최적이었다. 또한 lysozyme의 최적반응 pH와 온도는 각각 4.5와 35$^{\circ}C$였다. 일반 난백 lysozyme의 용균활성은 시험균주를 24시간 배양한 정지기의 세포에 대하여 가장 높았고 lysozyme의 최적 농도는 0.5%였으며 반응 최적 pH와 온도는 각각 5.5와 4$0^{\circ}C$이었다.

• Journal of Ceramic Processing Research
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• 제19권6호
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• pp.519-524
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• 2018

Carbon/carbon composites (C/C) have been widely studied in the aerospace field because of their excellent thermal shock resistance and specific strength at high temperature. However, they have the problems that is easily oxidized and deteriorated under atmospheric environment. In order to overcome these shortcomings, the CVD coating of ultra-high-temperature ceramics to C/C has become an important technical issue. In this study, thermodynamic calculations were performed to TaC CVD coating on C/C by FactSage 6.2 program. The Ta-C phase diagrams were constructed with the results of thermodynamic calculations in the Ta-C-H-Cl system. Based on the Ta-C phase diagram, the experimental conditions were designed to confirm the deposition of various phases such as TaC single phase, TaC + C and $TaC+Ta_2C$ by varying the composition of Ta/C ratio. The deposited films were found to be in good agreement with the predicted phases.

• 한국식품과학회지
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• 제31권4호
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• pp.1065-1070
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• 1999

참취뿌리의 에탄올 추출물과 용매 분획물에 대한 생리활성 효과를 밝히기 위해 항돌연변이성 및 암세포 성장억제효과를 실시한 결과 에탄올 추출물 자체의 돌연변이성은 없었다. 직접변이원인 N-methyl-N'-nitro-N-nitrosoguanidine(MNNG)에 대해서는 Salmonella typhimurium TA100의 경우 에탄올 추출물이 79%, 에틸아세테이트 분획물은 82%의 억제효과를 나타내었다. 4-Nitroquinoline-1-oxide(4NQO)에 대해서는 Salmonella typhimurium TA98에서 에탄올 추출물이 48%, 에틸 아세테이트 분획물은 60%의 억제효과를 보였다. 한편 간접 변이원인 benzo(${\alpha}$)pyrene[B(${\alpha}$)P]에 대해서는 에틸아세테이트 분획물의 경우 TA98에서는 78%, TA100에서는 85%의 높은 억제활성을 나타내었다. 그리고 3-amino-1,4-dimethyl-5H-pyrido(4,3-b)indole(Trp-P-1)에 대해서는 TA98에서 89%의 높은 억제효과를 보였다. 한편 참취 에탄올 추출물에 대한 암세포 성장억제 실험에서도 chronic myelogenous leukemia (K562), human gastric carcinoma (KATOIII), human hepatocellular carcinoma (Hep3B) 및 human breast adenocarcioma (MCF-7)에 대하여 높은 세포독성을 나타내었으며 용매 분획물의 경우 KATOIII 세포에서는 모든 분획물이 높은 세포독성을 나타내었으나 그외세포에 대해서는 물분획물을 제외한 에틸아세테이트, 부탄올 및 클로로포름 분획물이 높은 세포독성을 나타내었다.

• 한국재료학회지
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• 제29권9호
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• pp.559-566
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• 2019

$Lu(Nb,Ta)O_4:Eu^{3+}$ powders are synthesized by a solid-state reaction process using LiCl and $Li_2SO_4$ fluxes. The photoluminescence (PL) excitation spectra of the synthesized powders consist of broad bands at approximately 270 nm and sharp peaks in the near ultraviolet region, which are assigned to the $Nb^{5+}-O^{2-}$ charge transfer of $[NbO_4]^{3-}$ niobates and the f-f transition of $Eu^{3+}$, respectively. The PL emission spectra exhibit red peaks assigned to the $^5D_0{\rightarrow}^7F_J$ transitions of $Eu^{3+}$. The strongest peak is obtained at 614 nm ($^5D_0{\rightarrow}^7F_2$), indicating that the $Eu^{3+}$ ions are incorporated into the $Lu^{3+}$ asymmetric sites. The addition of fluxes causes the increase in emission intensity, and $Li_2SO_4$ flux is more effective for enhancement in emission intensity than is LiCl flux. The substitution of $Ta^{5+}$ for $Nb^{5+}$ results in an increase or decrease in the emission intensity of $LuNb_{1-x}Ta_xO_4:Eu^{3+}$ powders, depending on amount and kind of flux. The findings are explained using particle morphology, modification of the $[NbO_4]^{3-}$ structure, formation of substructure of $LuTaO_4$, and change in the crystal field surrounding the $Eu^{3+}$ ions.

• 한국재료학회지
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• 제10권3호
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• pp.199-203
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• 2000

세라믹 타겟인 Ta$_2$O(sub)5을 장착한 rf-마그네트론 스퍼터를 이용하여 Ta$_2$O(sub)5 완충층을 증착하고, Sr(sub)0.8Bi(sub)2.4Ta$_2$O(sbu)9 용액을 사용하여 MOD 법에 의해 SBT 막을 성장시킨 metal/ferroelectric/insulator/semiconductor (MFIS) 구조인 Pt/SBT/Ta$_2$O(sub)5/Si 구조의 Ta$_2$O(sub)5 완충층 증착시의 $O_2$유량비, Ta$_2$O(sub)5 완충층 두께에 따른 전기적 특성을 조사하였다. 그리고 Ta$_2$O(sub)5 박막의 완충층으로써의 효과를 확인하기 위해 Pt/SBT/Ta$_2$O(sub)5/Si 구조와 Pt/SBT/Si 구조의 전기적 특성을 비교하였다. Ta$_2$O(sub)5 완충층 증착시의 $O_2$유량비가 0%일 때는 전형적인 MFIS 구조의 C-V 특성을 얻지 못하였으며, 20%의 $O_2$유량비일 때 가장 큰 메모리 윈도우 값을 얻었다. 그리고 $O_2$유량비가 40%, 60%로 증가할수록 메모리 윈도우는 감소하였다. Ta$_2$O(sub)5 완충층의 두께의 변화에 대한 C-V 특성에서는 36nm의 Ta$_2$O(sub)5 두께에서 가장 큰 메모리 값을 얻었다. Pt/SBT/Si 구조의 메모리 윈도우 값과 누설전류 특성은 Pt/SBT/Ta$_2$O(sub)5/Si 구조의 값에 비해 크게 떨어졌으며, 따라서 Ta$_2$O(sub)5 막이 우수한 완충층으로써의 역할을 함을 알았다.

• 한국재료학회지
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• 제28권4호
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• pp.241-246
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• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• 한국식품영양과학회지
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• 제21권5호
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• pp.539-543
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• 1992

변이원물질인 N-methyl-N'-nitro-N-nitrosoguanidine, $benzo{(\alpha)}pyrene,$ 3-amino-1,4-dimethyl-5H-pyrido[4,3-b] indole에 대한 컴프리의 생즙과 가열즙의 항돌연변이 효과를 spore rec-assay 및 Ames test방법을 이용하여 검토하였다. Bacillus subtilis $H17(rec^+)$와 $H45(rec^-)$를 사용한 spore rec-assay에서 comfrey의 생즙시료 $40{\mu}l$처리시에 MNNG에 대한 강한 항돌연변이 효과를 나타내었다(p<0.01). Salmonella typhimurium TA98과 /TA100의 두 균주를 이용한 Ames test에서는, comfrey생즙의 경우 $B{(\alpha)}P$에 대해 TA98과 TA100 두균주 모두에서 각각 43% 및 52%의 다소 낮은 항돌연변이 효과를 나타낸 반면, 가열즙의 경우 Trp-P-1에 대해 TA98과 /TA100의 균주에 대해서 각각 75% 및 76%의 강한 항돌연변이 효과를 나타내었다(p<0.01).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.20-21
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• 2006

In this study, structural and microwave dielectric properties of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb} cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the ${Ba_5}{B_4}{O_{15}}$ (B=Ta, Nb) ceramics prepared by conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the ${Ba_5}{Ta_4}{O_{15}}$ ceramics were increased continuously with increasing of sintering temperature. And the bulk density and dielectric constant of the ${Ba_5}{Nb_4}{O_{15}}$ ceramics was increased in $1375^{\circ}C{\sim}1400^{\circ}C$ but decerased in $1425^{\circ}C$. In the case of ${Ba_5}{Ta_4}{O_{15}}$ ceramics sintered at $1475^{\circ}C$ and ${Ba_5}{Nb_4}{O_{15}}$ ceramics sintered at $1400^{\circ}C$, The dielectric constant and quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, $-3.06\;ppm/^{\circ}C$ and, 39.55, 28,052 GHz, $5.7\;ppm/^{\circ}C$ respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.