Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristic of Tantalum Nitride Thin-films for High Precision Resistors

고정밀 저항용 질화탄탈 박막의 특성

  • 최성규 (영남대학교 전자공학과) ;
  • 나경일 (동서대학교 정보시스템공학부 메카트로닉스전공) ;
  • 남효덕 (영남대학교 전자공학과) ;
  • 정귀삼 (동서대학교 정보시스템공학부 메카트로닉스전공)
  • Published : 2001.11.08
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Abstract

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

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