• Title/Summary/Keyword: Switching-Mode Amplifier

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Dual Mode Power Amplifier for WiBro and Wireless LAN Using Drain Bias Switching (드레인 바이어스 스위칭을 이용한 와이브로/무선랜 이중 모우드 전력증폭기)

  • Lee, Young-Min;Koo, Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.3 s.357
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    • pp.1-6
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    • 2007
  • A drain bias switching technique is presented to enhance power added efficiency for WiBro and wireless LAN dual band and dual mode transmitter. Some simulations have been done to predict the effect of drain and gate bias change, and bias switching is proposed to get the higher efficiency for dual mode transmitter which generates different output power for different applications. With drain bias switching and simulated optimum fixed gate bias, the amplifier shows dramatic PAE improvement compared to the amplifier without bias switching. The drain and gate bias switching technique will be useful for multi mode communication system with various functions.

Design of 5 W Current-Mode Class D RF Power Amplifier for GSM Band (GSM대역 5 W급 전류 모드 D급 전력증폭기의 설계)

  • 서용주;조경준;김종헌
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.6
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    • pp.540-547
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    • 2004
  • In this paper, a current - mode class D(CMCD) power amplifier over 70 % power added efficiency at 900 ㎒ is designed and implemented. Based on push-pull class B structure, main power loss due to charge and discharge of output capacitance in switching mode power amplifier is minimized by applying a parallel harmonic control circuit. Experimental CMCD amplifier with 73 % power added efficiency at 3.2 W and 72 % power added efficiency at 5 W are achieved respectively. In addition a characteristic of switching mode power amplifier whose output power is proportional to magnitude of U power is verified.

ZVT-PWM Amplifier for Audio Applications (소프트 스위칭 기술을 이용한 오디오용 파워앰프)

  • Seo, D.H.;Cho, B.H.
    • Proceedings of the KIEE Conference
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    • 1998.07f
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    • pp.2145-2147
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    • 1998
  • This paper presents a Class-D type switched mode audio power amplifier employing ZVT(Zero-Voltage-Transition) soft switching technique. In order to obtain a wide bandwidth and lower distortion for an audio amplifier a high switching frequency is essential. The ZVT switching scheme enables a high frequency switching without sacrificing the efficiency much as in a hard switching. A prototype amplifier is built to demonstrate the feasibility of this technique for the audio power amplifier.

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Efficiency Improvement for Dual Mode Amplifier Design Using Bias Switching (바이어스 스위칭을 이용한 이중 모우드 전력 증폭기 효율 개선)

  • Lee Young-Min;Koo Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.8 s.350
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    • pp.97-102
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    • 2006
  • This paper presents a novel technique of efficiency enhancement for dual mode transmitter. The future dual mode transmitter incorporates an amplifier which generates different level of output for different applications. For WiBro, the output is 1W at 2.3GHz, and for wireless LAN, the output is less than 100mW at 2.4GHz. Simple bias switching is proposed to get the higher efficiency at both of the applications. Without the bias switching the amplifier shows 10% PAE at 20dBm output for wireless LAN, but using a preselected lower bias, the efficiency improves up to 35%. This technique becomes more useful as the need of many function convergence terminals is increasing.

Linearity Improvement of Class E Amplifier Using Digital Predistortion (디지털 사전왜곡을 이용한 마이크로파 E급 증폭기의 선형성 개선)

  • Park, Chan-Hyuck;Koo, Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.3 s.357
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    • pp.92-97
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    • 2007
  • Switching mode amplifiers have been studied widely for use at microwave frequency range, and the class E amplifier which is a type of switching mode amplifier offers very high efficiency approaching 100%. In this paper, 2.4GHz microwave class E amplifier with 66% power added efficiency (PAE) and 17.6dBm output has been linearized for use at wireless LAN transmitter, and digital predistortion technique with look up table is applied. With -3dBm input power of wireless LAN, measured output spectrum can meet the required IEEE 802.11g standard spectrum mask, and the digital predistortion output spectrum has been improved by 5dB of ACPR at 20MHz offset from center frequency.

Design of a High Efficiency Class E Amplifier for Wireless LAN (무선 LAN용 고효율 E급 증폭기 설계)

  • Park Chan-Hyuck;Koo Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.8 s.350
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    • pp.91-96
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    • 2006
  • High efficiency switching mode circuits such as class I amplifiers have been well known in the MHz frequency range. The class E amplifier is a type of switching mode amplifier offering very high efficiency approaching 100%. In this paper, the class E amplifier has been designed by using the harmonic balance method of circuit simulator. The designed amplifier is realized by using pHEMT and microstrip line, shows 66% power added efficiency (PAE) at 2.4GHz with 17.6dBm output power. With -3dBm input power of wireless LAN, measured output spec01m can meet the required IEEE 802.11g standard spectrum mask. That means the required amplifier back off of 9dB from $P_{ldB}$ to satisfy the required wireless LAN spectrum mask.

Design of A Low Voltage High Efficiency Class-E Amplifier for Wireless LAN (무선 LAN용 저전압 고효율 E급 증폭기 설계)

  • Park, Chan-Hyuck;Koo, Kyung-Heon
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2005.11a
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    • pp.87-90
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    • 2005
  • High-efficiency switched-mode circuits such as the class-E amplifier are well-known in the MHz frequency range. The class-E amplifier is a type of switching mode amplifier offering very high efficiency approaching 100%. In this paper of the class-E amplifier by using pHEMT device, the design has been done theoretically and experimentally, with simulation by using the harmonic balance method using circuit simulator. The amplifier using microstrip circuit and the pHEMT demonstrate 66% power-added- efficiency (PAE) at 2.4GHz with 17.6dBm of output power.

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A Discrete-Amplitude Pulse Width Modulation for a High-Efficiency Linear Power Amplifier

  • Jeon, Young-Sang;Nam, Sang-Wook
    • ETRI Journal
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    • v.33 no.5
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    • pp.679-688
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    • 2011
  • A new discrete-amplitude pulse width modulation (DAPWM) scheme for a high-efficiency linear power amplifier is proposed. A radio frequency (RF) input signal is divided into an envelope and a phase modulated carrier. The low-frequency envelope is modulated so that it can be represented by a pulse whose area is proportional to its amplitude. The modulated pulse has at least two different pulse amplitude levels in order that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing the modulated envelope with the phase modulated carrier. The RF pulse train is amplified by a switching-mode power amplifier, and the original RF input signal is restored by a band pass filter. Because duty ratios of the RF pulse train are kept large in spite of a small input envelope, the DAPWM technique can reduce loss from harmonic components. Furthermore, it reduces filtering efforts required to suppress harmonic components. Simulations show that the overall efficiency of the pulsed power amplifier with DAPWM is about 60.3% for a mobile WiMax signal. This is approximately a 73% increase compared to a pulsed power amplifier with PWM.

Design of High Efficiency Switching-Mode Doherty Power Amplifier Using GaN HEMT (GaN HEMT를 이용한 고효율 스위칭 모드 도허티 전력증폭기 설계)

  • Choi, Gil-Wong;Kim, Hyoung-Jong;Choi, Jin-Joo;Kim, Seon-Joo
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.9 no.5
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    • pp.72-79
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    • 2010
  • In this paper, we describe the design and implementation of a high efficiency Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT). The carrier and peaking amplifiers of the proposed Doherty power amplifier consist of the switching-mode Class-E power amplifiers. The test conditions are a duty of 10% and a pulse width of $100\;{\mu}s$ and pulse repetition frequency (PRF) of 1 kHz for a S-band radar application. A RF performance peak PAE of 64% with drain efficiency of 80.6%, at 6 dB output back-off point from saturated output power of 45.5 dBm, was obtained at 2.85 GHz.

Low-area Dual mode DC-DC Buck Converter with IC Protection Circuit (IC 보호회로를 갖는 저면적 Dual mode DC-DC Buck Converter)

  • Lee, Joo-Young
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.586-592
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    • 2014
  • In this paper, high efficiency power management IC(PMIC) with DT-CMOS(Dynamic threshold voltage Complementary MOSFET) switching device is presented. PMIC is controlled PWM control method in order to have high power efficiency at high current level. The DT-CMOS switch with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuit consist of a saw-tooth generator, a band-gap reference(BGR) circuit, an error amplifier, comparator circuit, compensation circuit, and control block. The saw-tooth generator is made to have 1.2MHz oscillation frequency and full range of output swing from supply voltage(3.3V) to ground. The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on current mode PWM control circuits and low on-resistance switching device, achieved the high efficiency nearly 96% at 100mA output current. And Buck converter is designed along LDO in standby mode which fewer than 1mA for high efficiency. Also, this paper proposes two protection circuit in order to ensure the reliability.