• Applied Microscopy
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• 제46권4호
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• pp.206-216
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• 2016

This communication is to elucidate the state-of-the-art of techniques necessary to gather information on a new class of nanoelectronic devices known as memristors and related resistive switching devices, respectively. Unlike classical microelectronic devices such as transistors, the chemical and structural variations occurring upon switching of memristive devices require cutting-edge electron microscopy techniques. Depending on the switching mechanism, some memristors call for the acquisition of atomically resolved structural data, while others rely on atomistic chemical phenomena requiring the application of advanced X-ray and electron spectroscopy to correlate the real structure with properties. Additionally, understanding resistive switching phenomena also necessitates the application not only of pre- and post-operation analysis, but also during the process of switching. This highly challenging in situ characterization also requires the aforementioned techniques while simultaneously applying an electrical bias. Through this review we aim to give an overview of the possibilities and challenges as well as an outlook onto future developments in the field of nanoscopic characterization of memristive devices.

• Journal of the Korean Data and Information Science Society
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• 제26권4호
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• pp.997-1006
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• 2015

In industrial quality control, when engineers use VSI control procedure they should consider both required time to signal and switching behaviors together in the case of production process changed. Up to the present, many researchers have studied fixed sampling interval (FSI) chart and variable sampling interval (VSI) chart in the points of average number of samples to signal (ANSS) and average time to signal (ATS). However, ANSS and ATS do not provide any switching information between different sampling intervals of VSI schemes. In this study, performances of two sampling intervals VSI chart and three sampling intervals VSI chart are evaluated and compared. The numerical results show that ANSS and ATS values of two sampling intervals VSI chart and three sampling interval VSI chart are similar regardless the amount of shifts. However, the values of switching behaviors including ANSW are less efficient in three sampling intervals VSI charts than in two sampling intervals VSI chart.

• 전력전자학회논문지
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• 제6권6호
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• pp.564-571
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• 2001

본 논문은 휴대용 기기를 위한 고효율의 저전압용 DC/DC 컨버터의 고집적회로에 관한 연구이다. 컨버터의 모든 능동 소자들은 0.65$\mu\textrm{m}$표준 CMOS 공정을 사용하여 단일 칩으로 구현하였다 수종 소자들의 크기를 줄이기 위해서 1MHz의 주파수에서 동작하며 높은 주파수에서 의스위칭 손실을 최소화하기 위하여 ZVS 방식으로 설계하였다. 시뮬레이션 결과 출력 전압이 2V일때 1W의 출력을 가지며 full 부하에서 95%의 효율을 보였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권3호
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• pp.115-119
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• 2001

This paper presents an efficient and simple method for analyzine maximum simultaneous switching noise (SSN) on ground interconnection networks in CMOS systems. For the derivation of maximum SSN expression, we use ${\alpha}$-power law MOS model and Taylor's series approximation. The accuracy of the proposed method is verified by comparing the results with those of previous researches and HSPICE simulations under the contemporary process parameters and environmental conditions. The proposed method predicts the maximum SSN values more accurately when compared to existing approaches even in most practical cases such that exist some output drivers not in transition.

• Communications for Statistical Applications and Methods
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• 제25권1호
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• pp.29-42
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• 2018

We combine the integer-valued GARCH(1, 1) model with a generalized regime-switching model to propose a dynamic count time series model. Our model adopts Markov-chains with time-varying dependent transition probabilities to model dynamic count time series called the generalized regime-switching integer-valued GARCH(1, 1) (GRS-INGARCH(1, 1)) models. We derive a recursive formula of the conditional probability of the regime in the Markov-chain given the past information, in terms of transition probabilities of the Markov-chain and the Poisson parameters of the INGARCH(1, 1) process. In addition, we also study the forecasting of the Poisson parameter as well as the cumulative impulse response function of the model, which is a measure for the persistence of volatility. A Monte-Carlo simulation is conducted to see the performances of volatility forecasting and behaviors of cumulative impulse response coefficients as well as conditional maximum likelihood estimation; consequently, a real data application is given.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.54-58
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• 2021

The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.

• Applied Microscopy
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• 제51권
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• pp.7.1-7.9
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• 2021

Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

• 전기전자학회논문지
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• 제25권2호
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• pp.350-355
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• 2021

IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 V_CE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, V_CE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 V_CE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.443-450
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• 1995

A directional coupler which on the X-cut $LiNbO_3$ substrate is fabricated by using proton exchange method and self-aligned method. After proton exchange process, the waveguide is formed by annealing process. The relation ship between refractive index change of waveguide and maximum output was studied along with the annealing time. A self-aligned method was used to simplify the fabrication process of the waveguide and to maximize the efficiency of electric field. The on-off state of modulator has been observered with the switching of the directional coupler by the electric field effect and also the switching voltage of the directional coupler has been measured with 8.0 [V].

• 통합자연과학논문집
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• 제12권3호
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• pp.78-84
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• 2019

In many cases, the quality of a product is determined by several correlated quality variables. Control charts have been used for a long time widely to control the production process and to quickly detect the assignable causes that may produce any deterioration in the quality of a product. Numerical switching performances of multivariate cumulative sum control chart for simultaneous monitoring all components in the dispersion matrix ${\Sigma}$ under multivariate normal process $N_p({\underline{\mu}},{\Sigma})$ are considered. Numerical performances were evaluated for various shifts of the values of variances and/or correlation coefficients in ${\Sigma}$. Our computational results show that if one wants to quick detect the small shifts in a process, CUSUM control chart with small reference value k is more efficient than large k in terms of average run length (ARL), average time to signal (ATS), average number of switches (ANSW).