Transmission Electron Microscopy on Memristive Devices: An Overview |
Strobel, Julian
(Kiel University, Faculty of Engineering, Institute for Materials Science)
Neelisetty, Krishna Kanth (Karlsruhe Institute of Technology, Institute of Nanotechnology) Chakravadhanula, Venkata Sai Kiran (Karlsruhe Institute of Technology, Institute of Nanotechnology) Kienle, Lorenz (Kiel University, Faculty of Engineering, Institute for Materials Science) |
1 | Pino R E, Bohl J W, McDonald N, Wysocki B, Rozwood P, Campbell K A, Oblea A, and Timilsina A (2010) Compact method for modeling and simulation of memristor devices: ion conductor chalcogenide-based memristor devices. In: 2010 IEEE/ACM International Symposium on Nanoscale Architectures, pp. 1-4, (IEEE). |
2 | Privitera S, Bersuker G, Butcher B, Kalantarian A, Lombardo S, Bongiorno C, Geer R, Gilmer D C, and Kirsch P D (2013) Microscopy study of the conductive filament in resistive switching memory devices. Microelectron. Eng. 109, 75-78. DOI |
3 | Privitera S, Bersuker G, Lombardo S, Bongiorno C, and Gilmer D C (2015) Conductive filament structure in resistive switching memory devices. Solid-State Electron. 111, 161-165. DOI |
4 | Qian K, Nguyen V C, Chen T, and Lee P S (2016a) Amorphous-Si-based resistive switching memories with highly reduced electroforming voltage and enlarged memory window. Adv. Electron. Mater. 2, 1500370. DOI |
5 | Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, and Lee P S (2016b) Hexagonal boron nitride thin film for flexible resistive memory applications. Adv. Funct. Mater. 26, 2176-2184. DOI |
6 | Savel'ev S E, Alexandrov A S, Bratkovsky A M, and Williams R S (2011) Molecular dynamics simulations of oxide memristors: thermal effects. Appl. Phys. A: Mater. Sci. Process. 102, 891-895. DOI |
7 | Seo S, Lee M J, Seo D H, Jeoung E J, Suh D S, Joung Y S, Yoo I K, Hwang I R, Kim S H, Byun I S, Kim J S, Choi J S, and Park B H (2004) Reproducible resistance switching in polycrystalline NiO films. Appl. Phys. Lett. 85, 5655-5657. DOI |
8 | Song J, Zhang Y, Xu C, Wu W, and Wang Z L (2011) Polar charges induced electric hysteresis of ZnO nano/microwire for fast data storage. Nano Lett. 11, 2829-2834. DOI |
9 | Yan H, Choe H S, Nam S, Hu Y, Das S, Klemic J F, Ellenbogen J C, and Lieber C M (2011) Programmable nanowire circuits for nanoprocessors. Nature 470, 240-244. DOI |
10 | Xia Q, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, and Williams R S (2009) Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Lett. 9, 3640-3645. DOI |
11 | Yang Y, Gao P, Gaba S, Chang T, Pan X, and Lu W (2012) Observation of conducting filament growth in nanoscale resistive memories. Nat. Commun. 3, 732. DOI |
12 | Vieweg B F, Butz B, Peukert W, Klupp Taylor R N, and Spiecker E (2012) TEM preparation method for site- and orientation-specific sectioning of individual anisotropic nanoparticles based on shadow-FIB geometry. Ultramicroscopy 113, 165-170. DOI |
13 | Tian X, Wang L, Wei J, Yang S, Wang W, Xu Z, and Bai X (2014) Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM. Nano Res. 7, 1065-1072. DOI |
14 | Toufik S, Liping W, Louis G, and Asen A (2015) Physical simulation of sibased resistive randomaccess memory devices. In: Proceedings from SISPAD 2015, pp. 385-388, (IEEE). |
15 | Tseng A A (2004) Recent developments in micromilling using focused ion beam technology. J. Micromech. Microeng. 14, R15. DOI |
16 | Valov I and Kozicki M N (2013) Cation-based resistance change memory. J. Phys. D: Appl. Phys. 46, 74005. DOI |
17 | Vasudevan R K, Matsumoto Y, Cheng X, Imai A, Maruyama S, Xin H L, Okatan M B, Jesse S, Kalinin S V, and Nagarajan V (2014) Deterministic arbitrary switching of polarization in a ferroelectric thin film. Nat. Commun. 5, 4971. DOI |
18 | Waser R (2012) Redox-based resistive switching memories. J. Nanosci. Nanotechnol. 12, 7628-7640. DOI |
19 | Wu X, Li K, Raghavan N, Bosman M, Wang Q X, Cha D, Zhang X X, and Pey K L (2011) Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high- dielectric based resistive random access memory. Appl. Phys. Lett. 99, 93502. DOI |
20 | Xia Q (2011) Nanoscale resistive switches: devices, fabrication and integration. Appl. Phys. A: Mater. Sci. Process. 102, 955-965. DOI |
21 | Calka P, Martinez E, Delaye V, Lafond D, Audoit G, Mariolle D, Chevalier N, Grampeix H, Cagli C, Jousseaume V, and Guedj C (2013) Chemical and structural properties of conducting nanofilaments in TiN/-based resistive switching structures. Nanotechnology 24, 85706. DOI |
22 | Aoki Y, Wiemann C, Feyer V, Kim H S, Schneider C M, Ill-Yoo H, and Martin M (2014) Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour. Nat. Commun. 5, 3473. DOI |
23 | Arita M, Ohno Y, and Takahashi Y (2016) Switching of Cu/MoOx/TiN CBRAM at MoOx/TiN interface. Phys. Status Solidi A 213, 306-310. DOI |
24 | Avizienis A V, Sillin H O, Martin-Olmos C, Shieh H H, Aono M, Stieg A Z, and Gimzewski J K (2012) Neuromorphic atomic switch networks. PLoS One 7, e42772. DOI |
25 | Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F, and Tsai M J (2008) Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92, 22110. DOI |
26 | Chanthbouala A, Garcia V, Cherifi R O, Bouzehouane K, Fusil S, Moya X, Xavier S, Yamada H, Deranlot C, Mathur N D, Bibes M, Barthelemy A, and Grollier J (2012) A ferroelectric memristor. Nat. Mater. 11, 860-864. DOI |
27 | Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, and Chen L J (2013) Dynamic evolution of conducting nanofilament in resistive switching memories. Nano Lett. 13, 3671-3677. DOI |
28 | Choi S J, Park G S, Kim K H, Cho S, Yang W Y, Li X S, Moon J H, Lee K J, and Kim K (2011) In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory. Adv. Mater. 23, 3272-3277. DOI |
29 | Chen J Y, Huang C W, Chiu C H, Huang Y T, and Wu W W (2015) Switching kinetic of VCM-based memristor: evolution and positioning of nanofilament. Adv. Mater. 27, 5028-5033. DOI |
30 | Chiang Y D, Chang W Y, Ho C Y, Chen C Y, Ho C H, Lin S J, Wu T B, and He J H (2011) Single-ZnO-nanowire memory. IEEE Trans. Electron Devices 58, 1735-1740. DOI |
31 | Di Martino G, Tappertzhofen S, Hofmann S, and Baumberg J (2016) Nanoscale plasmon-enhanced spectroscopy in memristive switches. Small 12, 1334-1341. DOI |
32 | Dirkmann S, Hansen M, Ziegler M, Kohlstedt H, and Mussenbrock T (2016) The role of ion transport phenomena in memristive double barrier devices. Sci. Rep. 6, 35686. DOI |
33 | Egerton R F (2007) Limits to the spatial, energy and momentum resolution of electron energy-loss spectroscopy. Ultramicroscopy 107, 575-586. DOI |
34 | Egerton R F (2011) Electron Energy-Loss Spectroscopy in the Electron Microscope (Springer Science & Business Media, New York). |
35 | Fan Z, Fan X, Li A, and Dong L (2013) In situ forming, characterization, and transduction of nanowire memristors. Nanoscale 5, 12310-12315. DOI |
36 | Giannuzzi L A (2012) Routine backside FIB milling with EXpressLO. In: Proceedings from ISTFA 2012, pp. 388-390, (ASM International, Materials Park). |
37 | Giannuzzi L A and Stevie F A (1999) A review of focused ion beam milling techniques for TEM specimen preparation. Micron 30, 197-204. DOI |
38 | Hammad Fawey M, Chakravadhanula V S K, Reddy M A, Rongeat C, Scherer T, Hahn H, Fichtner M, and Kubel C (2016) In situ TEM studies of micron-sized all-solid-state fluoride ion batteries: preparation, prospects, and challenges. Microsc. Res. Tech. 79, 615-624. DOI |
39 | Hansen M, Ziegler M, Kolberg L, Soni R, Dirkmann S, Mussenbrock T, and Kohlstedt H (2015) A double barrier memristive device. Sci. Rep. 5, 13753. DOI |
40 | Hasegawa T, Terabe K, Tsuruoka T, and Aono M (2012) Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers. Adv. Mater. 24, 252-267. DOI |
41 | Hirotsu Y, Ishimaru M, Ohkubo T, Hanada T, and Sugiyama M (2001) Application of nano-diffraction to local atomic distribution function analysis of amorphous materials. J. Electron Microsc. 50, 435-442. DOI |
42 | Huang C H, Huang J S, Lin S M, Chang W Y, He J H, and Chueh Y L (2012) nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application. ACS Nano 6, 8407-8414. DOI |
43 | Huang Y T, Yu S Y, Hsin C L, Huang C W, Kang C F, Chu F H, Chen J Y, Hu J C, Chen L T, He J H, and Wu W W (2013) In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories. Anal. Chem. 85, 3955-3960. DOI |
44 | Ilari G M, Chawla V, Matam S, Zhang Y, Michler J, and Erni R (2016) Electron energy loss spectroscopy analysis of the interaction of Cr and V with MWCNTs. Micron 84, 37-42. DOI |
45 | Kang H J, Kim J H, Oh J W, Back T S, and Kim H J (2010) Ultra-thin TEM sample preparation with advanced backside FIB milling method. Microsc. Microanal. 16, 170-171. DOI |
46 | Jang M H, Agarwal R, Nukala P, Choi D, Johnson A T C, Chen I W, and Agarwal R (2016) Observing oxygen vacancy driven electroforming in Pt-TiO2-Pt device via strong metal support interaction. Nano Lett. 16, 2139-2144. DOI |
47 | Jeong H Y, Kim J Y, Kim J W, Hwang J O, Kim J E, Lee J Y, Yoon T H, Cho B J, Kim S O, Ruoff R S, and Choi S Y (2010) Graphene oxide thin films for flexible nonvolatile memory applications. Nano Lett. 10, 4381-4386. DOI |
48 | Jeong H Y, Lee J Y, Choi S Y, and Kim J W (2009) Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films. Appl. Phys. Lett. 95, 162108. DOI |
49 | Kato N I (2004) Reducing focused ion beam damage to transmission electron microscopy samples. J. Electron Microsc. 53, 451-458. DOI |
50 | Kim K H, Gaba S, Wheeler D, Cruz-Albrecht J M, Hussain T, Srinivasa N, and Lu W (2012) A functional hybrid memristor crossbar-array/CMOS System for data storage and neuromorphic applications. Nano Lett. 12, 389-395. DOI |
51 | Kim S, Park J, Jung S, Lee W, Woo J, Cho C, Siddik M, Shin J, Park S, Lee B H, and Hwang H (2011) Excellent resistive switching in nitrogendoped Ge2Sb2Te5 devices for field-programmable gate array configurations. Appl. Phys. Lett. 99, 192110. DOI |
52 | Li Y, Zhong Y, Xu L, Zhang J, Xu X, Sun H, and Miao X (2013) Ultrafast synaptic events in a chalcogenide memristor. Sci. Rep. 3, 1619. DOI |
53 | Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, and Hwang C S (2010) Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5, 148-153. DOI |
54 | Langford R M and Clinton C (2004) In situ lift-out using a FIB-SEM system. Micron 35, 607-611. DOI |
55 | Lee A R, Baek G H, Kim T Y, Ko W B, Yang S M, Kim J, Im H S, and Hong J P (2016) Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames. Sci. Rep. 6, 30333. DOI |
56 | Liang K D, Huang C H, Lai C C, Huang J S, Tsai H W, Wang Y C, Shih Y C, Chang M T, Lo S C, and Chueh Y L (2014) Single CuOx nanowire memristor: forming-free resistive switching behavior. ACS Appl. Mater. Interfaces 6, 16537-16544. DOI |
57 | Lin C Y, Lee D Y, Wang S Y, Lin C C, and Tseng T Y (2008) Effect of thermal treatment on resistive switching characteristics in Pt/Ti//Ptdevices. Surf. Coat. Technol. 203, 628-631. DOI |
58 | Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, and Liu M (2010) Controllable growth of nanoscale conductive filaments in solidelectrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. ACS Nano 4, 6162-6168. DOI |
59 | Lin L, Liu L, Musselman K, Zou G, Duley W W, and Zhou Y N (2016) Plasmonic-radiation-enhanced metal oxide nanowire heterojunctions for controllable multilevel memory. Adv. Funct. Mater. 5979-5986. |
60 | Liu P H, Lin C C, Manekkathodi A, and Chen L J (2015) Multilevel resistance switching of individual Cu2S nanowires with inert electrodes. Nano Energy 15, 362-368. DOI |
61 | Ohnishi H, Kondo Y, and Takayanagi K (1998) Quantized conductance through individual rows of suspended gold atoms. Nature 395, 780-783. DOI |
62 | Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, and Liu M (2012) Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv. Mater. 24, 1844-1849. DOI |
63 | Mayer J, Giannuzzi L A, Kamino T, and Michael J (2007) TEM sample preparation and FIB-induced damage. MRS Bulletin 32, 400-407. DOI |
64 | Munroe P R (2009) The application of focused ion beam microscopy in the material sciences. Mater. Charact. 60, 2-13. DOI |
65 | Pena F, Ostasevicius T, Fauske V T, Burdet P, Jokubauskas P, Sarahan M, Johnstone D, Nord M, Taillon J, Caron J, MacArthur K E, Eljarrat A, Mazzucco S, Furnival T, Prestat E, Walls M, Donval G, Martineau B, Zagonel L F, Garmannslund A, Aarholt T, Gohlke C, and iygr (2016) hyperspy: HyperSpy 1.1. |
66 | Strachan J P, Yang J J, Montoro L A, Ospina C A, Ramirez A J, Kilcoyne A L D, Medeiros-Ribeiro G, and Williams R S (2013) Characterization of electroforming-free titanium dioxide memristors. Beilstein J. Nanotechnol. 4, 467-473. DOI |
67 | Stoger-Pollach M, Franco H, Schattschneider P, Lazar S, Schaffer B, Grogger W, and Zandbergen H W (2006) Cerenkov losses: a limit for bandgap determination and Kramers-Kronig analysis. Micron 37, 396-402. DOI |
68 | Stoger-Pollach M, and Schattschneider P (2007) The influence of relativistic energy losses on bandgap determination using valence EELS. Ultramicroscopy 107, 1178-1185. DOI |
69 | Strachan J P, Pickett M D, Yang J J, Aloni S, David Kilcoyne A L, Medeiros-Ribeiro G, and Stanley Williams R (2010) Direct identification of the conducting channels in a functioning memristive device. Adv. Mater. 22, 3573-3577. DOI |
70 | Sun X, Yu B, Ng G, and Meyyappan M (2007) One-dimensional phasechange nanostructure: germanium telluride nanowire. J. Phys. Chem. C 111, 2421-2425. DOI |
71 | Guo A, Li D, Li W, Gu D, Jiang X, and Jiang Y (2016) The relation of structure and dispersion to amorphous silicon silver thin films. Mater. Lett. 185, 5-8. DOI |
72 | Ishitani T and Yaguchi T (1996) Cross-sectional sample preparation by ion beam: a review of ion-sample interaction. Microsc. Res. Tech. 35, 320-333. DOI |
73 | Koo H J, So J H, Dickey M D, and Velev O D (2011) Towards all-soft matter circuits: prototypes of quasi-liquid devices with memristor characteristics. Adv. Mater. 23, 3559-3564. DOI |
74 | Yao I C, Lee D Y, Tseng T Y, and Lin P (2012) Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices. Nanotechnology 23, 145201. DOI |
75 | Zalden P, Shu M J, Chen F, Wu X, Zhu Y, Wen H, Johnston S, Shen Z X, Landreman P, Brongersma M, Fong S W, Wong H S P, Sher M J, Jost P, Kaes M, Salinga M, von Hoegen A, Wuttig M, and Lindenberg A M (2016) Picosecond electric-field-induced threshold switching in phase-change materials. Phys. Rev. Lett. 117, 67601. DOI |
76 | Kimura M, Honda K, Yodogawa S, Ohtsuka K, Oo T N, Miyashita K, Hirata H, and Akahane T (2012) Flexible LCDs fabricated with a slit coater: not requiring an alignment film. J. Soc. Inf. Disp. 20, 633-639. DOI |