• Title/Summary/Keyword: Switching pattern

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Voltage Control of a Synchronous Generator for Ship using a Compound Type Digital AVR (혼합형 디지털 자동 전압 조정 장치를 이용한 선박용 동기발전기의 출력전압제어)

  • Park, Sang-Hoon;Lee, Sang-Seuk;Yu, Jae-Sung;Lee, Su-Won;Won, Chung-Yuen
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.397-403
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    • 2009
  • In this paper, an exciter current control of a synchronous generator for ships using a compound type digital automatic voltage regulator (DVAR) in order to provide a constant output voltage of the generator is presented. The compound type DAVR is composed of a controller part to adjust output voltage and an power source unit to supply power to the exciter. The controller part, which generates the PWM switching pattern via the PI controller, drives a power MOSFET for bypass to limit the SG's exciter current. The power source unit part is parallel connected to an output terminal of the generator through a reactor and a power CT. The residual magnetic flux of SG provides exciter current to the exciter through the reactor during the initial running or no load state and load current supplies field current to the exciter through the power CT during loading state. This paper confirmed an experiment to verify the validity of compound type DAVR system for controlling output voltage of synchronous generator.

Electric Properties of SBT Thin Films with various Annealing Conditions (다양한 열처리 조건에 따른 SBT 박막의 전기적 특성)

  • Cho, C.N.;Kim, J.S.;Oh, Y.C.;Shin, C.G.;Park, G.H.;Choi, W.S.;Kim, C.H.;Hong, J.U.;Lee, J.U.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.589-592
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    • 2002
  • The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

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Development of Superconductive Arithmetic and Logic Devices (초전도 논리연산자의 개발)

  • Kang J. H
    • Progress in Superconductivity
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    • v.6 no.1
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    • pp.7-12
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    • 2004
  • Due to the very fast switching speed of Josephson junctions, superconductive digital circuit has been a very good candidate fur future electronic devices. High-speed and Low-power microprocessor can be developed with Josephson junctions. As a part of an effort to develop superconductive microprocessor, we have designed an RSFQ 4-bit ALU (Arithmetic Logic Unit) in a pipelined structure. To make the circuit work faster, we used a forward clocking scheme. This required a careful design of timing between clock and data pulses in ALU. The RSFQ 1-bit block of ALU used in this work consisted of three DC current driven SFQ switches and a half-adder. We successfully tested the half adder cell at clock frequency up to 20 GHz. The switches were commutating output ports of the half adder to produce AND, OR, XOR, or ADD functions. For a high-speed test, we attached switches at the input ports to control the high-speed input data by low-frequency pattern generators. The output in this measurement was an eye-diagram. Using this setup, 1-bit block of ALU was successfully tested up to 40 GHz. An RSFQ 4-bit ALU was fabricated and tested. The circuit worked at 5 GHz. The circuit size of the 4-bit ALU was 3 mm ${\times}$ 1.5 mm, fitting in a 5 mm ${\times}$ 5 mm chip.

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High Resolution Electrodes Fabrication for OTFT Array by using Microcontact Printing and Room Temperature Process

  • Jo, Jeong-Dai;Choi, Ju-Hyuk;Kim, Kwang-Young;Lee, Eung-Sug;Esashi, Masayoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.186-189
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    • 2006
  • The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

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Wideband Frequency Tunable Metamaterial Absorber Using Switchable Ground Plane (그라운드를 전환하여 주파수를 가변할 수 있는 광대역 메타물질 흡수체)

  • Jeong, Heijun;Lim, Sungjoon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.241-246
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    • 2018
  • In this study, we proposed a wideband frequency tunable metamaterial absorber using a switchable ground plane (SGP). We proposed two fire retardant or flame resistant 4 (FR4) substrate structures for the SGP. An SGP is placed at the middle layer, between the top pattern and the bottom ground plane. The SGP can either be made ground or reactive, by switching the PIN diode ON/OFF. As the frequency is determined by the substrate thickness, the frequency can be switched from the SGP. The proposed absorber is demonstrated by full-wave simulations and measurements. When the SGP is turned on, an absorptivity higher than 90% is achieved from 3.5 GHz to 11 GHz. When the SGP is turned off, an absorptivity higher than 90 % is achieved from 1.7 GHz to 5.2 GHz.

Development of Few-second 40 kV, 280 kW High Voltage Pulse Power Supply (수 초 지속 40 kV, 280 kW 고전압 펄스전원장치 개발)

  • Kim, S.C.;Nam, S.H.;Heo, H.;Heo, H.;Moon, C.;Kim, J.H.;Oh, S.S.;Yang, J.W.;Sho, J.H.
    • Proceedings of the KIEE Conference
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    • 2015.07a
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    • pp.990-991
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    • 2015
  • To drive a magnetron injection gun, thsi paper decribes a design, fabrication and analysis results of proposed compact capacitor charging power supply (CCPS) formed resonant full-bridge inverter for electron gun power supply (EGPS). EGPS needs the -40 kV output voltage and 280 kW output power for few seconds continuously and have to be designed for the rise and fall time to be less than 1 ms with the ripple stability of output voltage of lower than 1%. In order to meet the requirements, we used eight resonant full-bridge modules operated in parallel. Each resonant full-bridge module can supply the current of 0.9 A and the voltage of 40 kV, and is operated by N-phase shift switching pattern. In this paper, we present the design, simulation and test results of interleaved CCPS.

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Analysis of Common Mode Voltages at Diode Rectifier/Z-Source Inverter System (다이오드 정류기/Z-소스 인버터 시스템의 공통모드 전압 해석)

  • Tran, Quang-Vinh;Chun, Tae-Won;Lee, Hong-Hee
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.4
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    • pp.285-292
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    • 2009
  • In this paper, when ac motors are driven by the diode rectifier/Z-source inverter system, the common-mode voltages of system are analyzed in details under both the shoot-through state and non-shoot-through state through equivalent circuits. Then a modified space vector modulation strategy is suggested for attenuating the negative common-mode voltage by eliminating the zero voltage vector, and also controlling the shoot-through time. Through the simulation studies with PSIM and experiments with 32-bit DSP, it is verified that the negative common-mode voltage can be reduced by more than 50%.

Fabrication of Organic Thin Film Transistor(OTFT) for Flexible Display by using Microcontact Printing Process (미세접촉프린팅공정을 이용한 플렉시블 디스플레이 유기박막구동소자 제작)

  • Kim K.Y.;Jo Jeong-Dai;Kim D.S.;Lee J.H.;Lee E.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.595-596
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    • 2006
  • The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

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Single-Phase Active Power Filter for Higher-order Harmonic Current Compensation (고차 고조파 전류의 보상을 위한 단상 능동전력필터)

  • Sung, Ki-Suk;Woo, Myung-Ho;Song, Joong-Ho;Choy, Ick;Lim, Myo-Taeg
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.49 no.7
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    • pp.500-508
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    • 2000
  • Basic design for single-phase active power filter, which aims at railway application provided with PWM-controlled converters, is comprehensively studied and its performance is presented in this paper. Active power filters are used to compensate railway signaling and public telecommunication interference due to the high-order harmonic currents generated in railway traction locomotives. A type of hybrid digital filter which is composed of low pass filter and high pass filter is proposed so that the desired harmonic reference current with accurate magnitude and phase shift can be extracted from catenary line current. A design criteria to determine input inductor L and output capacitor C is also described, considering voltage, current, PWM pattern, and switching frequency of the main converters. Finally, computer simulation and DSP-based experiments resulted from laboratory test are presented.

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Ferroelectric Properties of SBT Thin Films Deposited by RF Magnetron Sputering Method (RF 마그네트론 스퍼터링법에 의한 SBT 박막의 강유전체 특성)

  • 조춘남;김진사;최운식;박용필;김충혁
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.9
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    • pp.731-735
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    • 2001
  • S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

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