• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.483-491
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• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

• Journal of Power Electronics
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• v.17 no.1
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• pp.56-66
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• 2017

Fast and accurate fault detection is the primary step and one of the most important tasks in fault tolerant converters. In this paper, a fast and simple method is proposed to detect and diagnosis the faulty cell in a cascaded H-bridge multilevel inverter under a short circuit fault. In this method, the reference voltage is calculated using switching control pulses and DC-Link voltages. The comparison result of the output voltage and the reference voltage is used in conjunction with active cell pulses to detect the faulty cell. To achieve this goal, the cell which is active when the Fault signal turns to "0" is detected as the faulty cell. Furthermore, consideration of generating the active cell pulses is completely described. Since the main advantage of this method is its simplicity, it can be easily implemented in a programmable digital device. Experimental results obtained with an 11-level inverter prototype confirm the effectiveness of the proposed fault detection technique. In addition, they show that the diagnosis method is unaffected by variations of the modulation index.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3277-3285
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• 1996

In this paper, w designed an opical power distribution device for application to an optical switching and an optical subscriber loop. We fabricated PSG thin film by LPCVD. Based on the measured index of fabricted thin film, rib-type waveguide was transformed to two-dimension by the effective index method and we simulated dispersion property to find asingle-mode condition. We found that the optimum design parameters of rib-type waveguide are:cladding layer of 3.mu.m, core layer of 3.mu.m, buffer layer of 10.mu.m, and core width of 4.mu.m. Each side of the guiding region was etched down to 4.mu.m to shape the core. We used these optimum parameters of the rib-type waveguide with branching angle of 0.5.deg. and simulted the Y-branch waveguide by the BPM simulation. Numerical loss in branching area was claculated to be 0.1581dB and equal to the total loss of the Y-branch. The loss of the fabricated Y-branch waveguide on PSG film ws 1.6dB at .lambda.=1.3.mu.m before annealing but was 1.2dB after annealing at 1000.deg. C for 10 minutes. Consequently, the loss of branching area from 3000.mu.m to 6000.mu.m in the z-direction was 0.8dB, and single-mode propagation was confirmed by measuring the near field pattern. For coupling the fabricated Y-branch waveguide with an optical fiber, we fabricated V-groove which was used as the upholder of optical fiber. An etching angle was 54.deg. and the width and depth of guiding groove was 150.mu.m, 70.mu.m, respectively. The optical fiber is inserted onto V-groove. Both the Y-branch and V-groove were connected through the index matching oil. Coupling loss after connecting Y-branch and the optical fiber on V-groove was 0.34dB and that after injecting index mateching oil was 0.14dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.57-60
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• 2000

In this paper, it is purpose to develop a pulsed $CO_2$ laser with stable output at pulse repetition rate range of 2 KHz. We used a IGBT as a switching device. The laser cavity was fabricated as an axial and water cooled type. It was used a ring blower to increase a cooling effect The laser performance characteristics as parameters, such as pulse repetition rate, gas pressure have been investigated. The experiment was done under 3 electrode-type instead of 2 electrode-type. To achieve 3 electrode-type, we used two pulse-transformers which is operated parallel. As a result, the maximum output was about 28 W at the total pressure of 20 Torr, the gas mixture $Co_2$:$N_2$:He=1:9:15 and the pulse repetition rate of 1300 Hz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.310-311
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• 2008

We have studied electro-optical characteristics of fringe-field switching (FFS) mode with high $d{\Delta}n$ according to the electrode position. In this device, the fringe-electric field drives the LCs to rotate so that the dielectric torque is electrode-positional dependent, which results in electrode-position dependency in the LC's rotating angle. We confirmed polarization microscope image and chromaticity diagram at the different electrode position with LC that have high $d{\Delta}n$. Since the FFS mode is influenced by horizontal and vertical electric field, the FFS mode modulates light using both phase retardation and polarization rotation effect, which had already been verified with previous studies. However, from another point of view, tight modulation of FFS mode has been demonstrated by performing experiment and calculated simulation at the high $d{\Delta}n$ LC cell.

• Journal of IKEEE
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• v.22 no.2
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• pp.488-490
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• 2018

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characterisitcs, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. To demonstrate the changing characteristics of hysteresis, one of the important features of the feedback field effect transistor, we simulated changing the gate insulating material and the gate metal electrode. The fluctuation in the characteristics changed the $V_{TH}$ of the hysteresis and showed a decrease in width of the hysteresis.

• Journal of Industrial Technology
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• v.40 no.1
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• pp.13-18
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• 2020

Lithium-ion batteries have a small volume, light weight and high energy density, maximizing the utilization of mobile devices. It is widely used for various purposes such as electric bicycles and scooters (e-Mobility), mass energy storage (ESS), and electric and hybrid vehicles. To date, lithium-ion batteries have grown to focus on increasing energy density and reducing production costs in line with the required capacity. However, the research and development level of lithium-ion batteries seems to have reached the limit in terms of energy density. In addition, the charging time is an important factor for using lithium-ion batteries. Therefore, it was urgent to develop a high-speed charger to shorten the charging time. In this thesis, a discharger was fabricated to evaluate the capacity and characteristics of Li-ion battery pack which can be used for e-mobility. To achieve this, a smart discharger is designed with a combination of active load, current sensor, and temperature sensor. To carry out this thesis, an active load switching using sensor control circuit, signal processing circuit, and FET was designed and manufactured as hardware with the characteristics of active discharger. And as software for controlling the hardware of the active discharger, a Raspberry Pi control device and a touch screen program were designed. The developed discharger is designed to change the 600W capacity battery in the form of active load.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.