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http://dx.doi.org/10.5573/JSTS.2017.17.4.483

Effect of a SiO2 Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors  

Zumuukhorol, Munkhsaikhan (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University)
Khurelbaatar, Zagarzusem (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University)
Kim, Jong-Hee (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University)
Shim, Kyu-Hwan (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University)
Lee, Sung-Nam (Department of Nano-Optical Engineering, Korea Polytechnic University)
Leem, See-Jong (Department of Energy and Electrical Engineering, Korea Polytechnic University)
Choi, Chel-Jong (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.17, no.4, 2017 , pp. 483-491 More about this Journal
Abstract
The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.
Keywords
Ge; $SiO_2$; anti-reflection layer; MSM photodetector; responsivity;
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1 R. Homier, A. Jaouad, A. Turala, C. E. Valdivia, D. Masson, S. G. Wallace, S. Fafard, R. Ares and V. Aimez, "Antireflection coating design for triple-junction III-V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride," IEEE J. Photovolt, Vol.2, No.3, pp.393-397, July., 2012.   DOI
2 E. Brinley, S. Seal, R. Folks, E. Braunstein, L. Kramer and S. Seal, "High efficiency $SiO_2$ - $TiO_2$ hybrid sol-gel antireflective coating for infrared applications," J. Vac. Sci. Technol A, Vol.24, pp.1141-1146, June., 2006.   DOI
3 P. H. Ho, W. C. Lee, Y. T. Liou, Y. P. Chiu, Y. S. Shih, C. C. Chen, P. Y. Su, M. K. Li, H. L. Chen, C. T. Liang and C. W. Chen, "Sunlight-activated graphene-heterostructure transparent cathodes: enabling high-performance n-graphene/p-Si Schottky junction photovoltaics," Energy Environ. Sci, Vol.8, pp.2085-2092, May., 2015.   DOI
4 D. Li, F. Huang and S. Ding, "Sol-gel preparation and characterization of nanoporous ZnO/$SiO_2$ coatings with broadband antireflection properties," Appl. Surf. Sci, Vol.257, pp.9752-9756, June., 2011.   DOI
5 K. Ali, S. A. Khan and M. Z. M. Jafri, "Effect of double layer ($SiO_2/TiO_2$) anti-reflective coating on silicon solar cell," Int. J. Electrochem. Sci, Vol.9, pp.7865-7874, Oct., 2014.
6 C. Wang, C. Li, J. Wei, G. Lin, X. Lan, X. Chi, C. Lu, Z. Huang, C. Chen, W. Huang, H. Lai and S. Chen, "High-performance Ge p-n photodiode achieved with preannealing and excimer laser annealing," IEEE Photon. Technol. Lett, Vol.27, No.14, pp.1485-1488, July., 2015.   DOI
7 H. Y. Yu, D. Kim, S. Ren, M. Kobayashi, D. A. B. Miller, Y. Nishi and K. C. Saraswat, "Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si," Appl. Phys. Lett, Vol.95, pp.161106-1-1161106-3, Oct., 2009.   DOI
8 D. K. Reinhard, D. T. Tran, T. Schuelke, M.F. Becker, T.A. Grotjohn and J. Asmussen, "$SiO_2$ antireflection layers for single-crystal diamond," Diam Relat Mater, Vol.25, pp.84-86, Feb., 2012.   DOI
9 M. Li and W. A. Anderson, "Si based metal-semiconductor-metal photodetectors with various design modifications," Solid State Electron, Vol.51, pp.94-101, Jan., 2007.   DOI
10 J. B. D. Soole and H. Schumacher, "InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications," IEEE J. Quantum Electron, Vol.27, No.3, pp.737-752, Mar., 1991.   DOI
11 C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre and K. C. Saraswat, "Germanium MOS capacitors incorporating ultrathin high-${\kappa}$ gate dielectric," IEEE Electron Device Lett, Vol.23, No.8, pp.473-475, Aug., 2002.   DOI
12 A. Rogalski, "Infrared detectors: an overview," Infrared Phys. Technol, Vol.43, pp.187-210, June., 2002.   DOI
13 K. D. Stock and R. Heine, "Spectral characterization of Ge trap detectors and photodiodes used as transfer standards," Metrologia, Vol.40, pp.163-166, Feb., 2003.   DOI
14 M. Lopez, H. Hofer, K. D. Stock, J. C. Bermudez, A. Schirmacher, F. Schneck and S. Kuck, "Spectral reflectance and responsivity of Ge and InGaAs photodiodes in the near-infrared: measurement model," Appl. Opt, Vol.46, No.29, pp.7337-7344, Oct., 2007.   DOI
15 Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H. C. Luan and L. C. Kimerling, "Strain-induced band gap shrinkage in Ge grown on Si substrate," Appl. Phys. Lett, Vol.81, No.13, pp.2044-2046, Mar., 2003.
16 J. C. Cervantes-Gonzalez, D. Ahn, X. Zheng, S. K. Banerjee, A. T. Jacome, J. C. Campbell and I. E. Zaldivar-Huerta, "Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides," Appl. Phys. Lett, Vol.101, pp.261109-1-261109-3, Dec., 2012.   DOI
17 L. H. Zeng, M. Z. Wang, H. Hu, B. Nie, Y. Q. Yu, C. Y. Wu, L. Wang, J. G. Hu, C. Xie, F. X. Liang and L. B. Luo, "Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector," ACS Appl. Mater. Interfaces, Vol.5, pp.9362-9366, Sept., 2013.   DOI
18 C. H. Lin and C. W. Liu, "Metal-insulator-semiconductor photodetectors," Sensors, Vol.10, pp.8797-8826, Sept., 2010.   DOI
19 S. S. Naika and V. R. Reddy, "Analysis of current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) characteristics of Ni-Au Schottky contacts on n-type InP," Superlattices Microstruct, Vol.40, pp.330-342, July., 2010.
20 Z. Khurelbaatar, Y. H. Kil, H. K. Lee, J. H. Yang, S. Kang, T. S. Kim and K. H. Shim, "A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure," J. Korean Phys. Soc, Vol.65, No.12, pp.2100-2106, Dec., 2014.   DOI
21 L. Colace, G. Masini, F. Galluzzi and G. Assanto, "Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si," Appl. Phys. Lett, Vol.72, No.24, pp.3175-3177, June., 1998.   DOI
22 J. Oh, S. K Banerjee and J. C. Campbell, "Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers," IEEE Photon. Technol. Lett, Vol.16, No.2, pp.581-583, Feb., 2004.   DOI
23 T. Asar and S. Ozcelik, "Barrier enhancement of Ge MSM IR photodetector with Ge layer optimization," Superlattices Microstruct, Vol.88, pp.685-694, Dec., 2015.   DOI
24 D. Wang, T. Maekura, S. Kamezawa, K. Yamamoto and H. Nakashima, "Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure," Appl. Phys. Lett, Vol.106, pp.071102-1-071102-4, Feb., 2015.   DOI
25 J. T. Cox and G. Hass, "Antireflection coatings for germanium and silicon in the infrared," J. Opt. Soc. Am, Vol.48. No.10, pp.677-680, Oct., 1958.   DOI
26 K. D. Stock, "Ge photodiodes as transfer standards for radiant power measurements in the field of fibre optics," Measurement, Vol.8, No.1, pp.31-34, Mar., 1990.   DOI
27 K. Lark-Horovitz and K. W. Maissner, "The optical properties of semiconductors. I. The reflectivity of germanium semiconductors," Phys. Rev, Vol.76, pp.1530-1530, Oct., 1949.
28 J. Wang and S. Lee, "Ge-photodetectors for Si-based optoelectronic integration," Sensors, Vol.11, pp.696-718, Jan., 2011.   DOI