• 전자공학회논문지A
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• 제28A권5호
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• pp.370-374
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• 1991

A high performance fully ion-implanted InP JFET was characterized for high speed switching elements. The switch has an insertion loss of 5.5dB with 31.6dB isolation at 1GHz. This device can effectively swithc a byte-multiplexed 2Gb/s signal and an eye-diagram taken at 2Gb/s shows an error-free eye pattern. Therefore, this device can be used as a switching element for high transmission data rate for monolithic integration of optoelectronic circuit in the long-wavelength region.

• 조명전기설비학회논문지
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• 제29권4호
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• 전기의세계
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• 제25권1호
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• pp.104-107
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• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• 지능정보연구
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• 제29권1호
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• pp.289-305
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• 2023

모바일 기기 사용의 급격한 증가는 소비자의 온라인 쇼핑 행동을 변화시키고 있다. 하지만, 소비자가 작은 화면에서 큰 화면으로 전환하는 시기에 따라 전환률에 미치는 영향에 어떠한 차이가 있는지는 충분히 연구되지 않았다. 또한, 개별 국가의 인프라 특성에 따라 기기전환이 구매성과에 미치는 영향에 어떠한 차이가 있는지도 충분히 연구되지 않았다. 이러한 배경에서 본 연구는 De Haan et al.(2018)의 연구를 글로벌 맥락으로 확장하여 모바일 기기에서 PC기기로 전환하는 시기와 국가의 모바일 인터넷 보급률이 기기전환이 구매성과에 미치는 긍정적 효과를 조절하는지 분석하고자 한다. 실증분석을 위해 구글 머천다이즈 스토어 데이터를 수집하여, 130개 국가의 101,466개 데이터를 다수준 모형으로 분석하였다. 분석결과, 소비자의 기기 전환(i.e., 모바일에서 PC)은 소비자 여정의 중기에 발생했을 때, 긍정적인 영향을 미쳤다. 하지만, 소비자 여정의 후기에 기기전환이 발생한 경우에는 오히려 구매성과에 부정적인 영향을 미치는 것으로 분석되었다. 또한, 모바일 인터넷 보급률이 높을수록 소비자의 기기전환이 구매성과에 미치는 긍정적 효과가 약화 되는 것으로 분석되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 B
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• pp.1094-1096
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• 2002

A new technique for improving the efficiency of single-phase high-frequency boost converter is proposed. This converter includes an additional low-frequency boost converter which is connected to the main high-frequency switching device in parallel. The additional converter is controlled at lower frequency. Most of the current flows in the low-frequency switch and so, high-frequency switching loss is greatly reduced accordingly. Both switching device are controlled by a simple method; each controller consists of a comparator, a frequency generator and an error amplifier. The converter works cooperatively in high efficiency and acts as if it were a conventional high-frequency boost converter with one switching device, The proposed method is verified by simulation and experiment. This paper describes the converter configuration and design, and discusses the steady-state performance concerning the switching loss reduction and efficiency improvement.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.447-448
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• 2012

With wireless power transfer the of ECR device the designed with a high-frequency and high frequency AC power to the device that may enter the high-frequency switching inverter to be possible. In this paper, is designed to 2MHz switching frequency by using ECR device capable of 2MHz Class ${\Phi}_2$ inverter was designed as a wireless power transmission.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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• pp.918-921
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• 2004

In a motor drive, the current rating is directly related to the rating of a switching device, and the parallel switching operation for a cost reduction is the alternatives because it has the smaller current rating through current division. There are many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. This paper proposes a new parallel operation which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. The proposed strategy is verified by theoretical and experimental results.

• 자연과학논문집
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• 제18권1호
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• pp.9-16
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• 2007

의료용 고출력 단일 레이저 펄스를 만들기 위한 전기광학적인 Q-스윗칭 방법은 밀도 반전과 Q-스윗칭 시간과의 관계에 영향을 받는다. Q-스윗치로서 $LiNbO_3$ 결정을 사용할 때 발생하는 난점을 해결하기 위하여 각 결정에 대한 인가 전압에 대한 편광실험이 필요하다.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.530-535
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• 2004

We have studied 90$^{\circ}$ twisted nematic mode switching by fringe electric field(F-TN mode) using a liquid crystal (LC) with negative dielectric anisotropy. In the device, two polarizers are parallel each other, electrodes exist only on bottom substrate, and one of rubbing direction is coincident with polarizer axis. Therefore, the cell shows a black state before a voltage is applied. With a bias voltage generating fringe-electric field, the LC twists perpendicular to fringe electric field such that the LCs are almost homogeneously aligned except near the bottom surface since the negative type of the LC is used. Consequently, the new device exhibits much wider viewing angle than that of the conventional TN mode due to in-plane switching and relatively high transmittance since the LC director above whole electrode area aligns parallel to the polarizer axis.

• 대한전기학회논문지
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• 제45권4호
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• pp.535-542
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• 1996

A zero voltage switching (ZVS) three level auxiliary resonant commutated pole inverter (ARCPI) is presented for high power GTO inverters. The concept of ARCP for two level inverter is extended to the three inverter. The proposed auxiliary commutation circuit consists of one resonant inductor and two bi-directional switches, which provides ZVS condition to the main devices without increasing device voltage or current stresses. The auxiliary device operates with zero current switching (ZCS) which enables use of the low cost thyristors. The proposed ARCPI can handle higher voltage and higher power (1-10MVA) comparing to the two level one. Operation and analysis of the ARCPI are illustrated and the features are compared o those of the snubber circuit incorporated three level inverter. Experimental results with 10kW, 4kHz prototype are presented to verify the principle of operation. (author). refs., figs., tab.