A Study on the Electrode Effect of As-Te-Si-Ge Non-Crystalline Thin film Switching Devices

As-Te-Si-Ge 비정질박막 스위칭 소자의 전극영향에 관한 연구

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.