• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.4
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• pp.1024-1030
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• 2015

Safety and security system have been internationally enhanced in a field of shipping logistics. Accordingly, techniques for safety and security have been studied steadily. The need of portable radiation detection device is increasing by the search of the container is enhanced. In this paper, we propose a study to improve the life of the system and the realization of portable radiation detection device based on Cortex-A9. Configuration of a portable radiation detection device is configured largely to an analog board and the digital platform and the sensor module. The power used in each stage of the analog board is varied. Uses a switching regulator to use various power supply thereby to generate an error result and cause the switching noise. It is proposed to reduce the power consumption reducing technique for the study.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.12
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• pp.1321-1328
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• 2015

A radio is a half-duplex voice communication method using the PTT(: Push To Talk), occupy a single line calls during transmission. As an interface between the telephone and the radio, UHF and VHF, for voice communication between the different heterogeneous devices, A device automatically switches between the two devices is required. Therefore, in accordance with the performance of the voice switching apparatus for detecting a voice to be transmitted from an input signal, loss of the audio signal to be transmitted is subjected to Significant influence. Conventional method has the problem responding to noise by setting the level through simple means of amplitude of input signal, in other words, the energy level of the input signal. This paper, by using the audio signal processing techniques, this discriminated what the voice is among the input signal and substantiated a device for the automatic voice transmission between heterogeneous devices. With this proposal, I was confirmed of improvement of performance in the automatic voice switching device, could perform loss-less transmission of voice between heterogeneous devices.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.151-157
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• 2012

The two dimensional electron gas system based on GaAs/$Al_xGa_{1-x}As$ heterostructure is widely used for fabricating quantum structures such as quantum dot, quantum point contact, electron interferometer and so on. However the conductance of the device is usually unstable due to the presence of random telegraph noise in the device. To overcome such problem, we have studied the effect of surface state on the stability of the device by altering the surface state of the device with oxygen plasma. The dramatic improvement of the device stability has been observed after cleaning the device surface with oxygen plasma (by 50 W~120 W plasma power) for 30 sec followed by etching in HCl : $H_2O$ (1 : 3) solution.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.1872-1882
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• 2017

Medium voltage drive systems driven by high-power multi-level inverters operating at low switching frequency can reduce the switching losses of the power device and increase the output power. Employing subsection synchronous current harmonic minimum pulse width modulation (CHMPWM) technique can maintain the total harmonic distortion of current at a very low level. It can also reduce the losses of the system, improve the system control performance and increase the efficiency of DC-link voltage accordingly. This paper proposes a subsection synchronous CHMPWM approach of active neutral point clamped five-level (ANPC-5L) inverter under low switching frequency operation. The subsection synchronous scheme is obtained by theoretical calculation based on the allowed maximum switching frequency. The genetic algorithm (GA) is adopted to get the high-precision initial values. So the expected switching angles can be achieved with the help of sequential quadratic programming (SQP) algorithm. The selection principle of multiple sets of the switching angles is also presented. Finally, the validity of the theoretical analysis and the superiority of the CHMPWM are verified through both the simulation results and experimental results.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.3
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• pp.211-219
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• 2009

In this paper, a detailed analysis of zero current or zero voltage switching boost converter using a single switch is described. The proposed topology is capable of decreasing switching loss of IGBT device using soft switching technique. As a results, it can be reduced size and weight of passive elements. Based on the mode analysis, practical design considerations are presented. We confirm the converter topology, principle of operation and simulation results obtained from the PSIM software. The performance of the proposed converter is verified by with 1kW(400V, 2.5A) prototype circuit operated at 30kHz.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.506-511
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• 1998

This paper gives and analytical expression of the average and rms currents of switching devices in volt-age-fed PWM inverters. It is shown that the device currents are represented by a function of the power factor of the load and the normalized output voltage of the inverter. The validity of the derived formulas is confirmed with simulation and experiment, showing that the modulation method has a minor effect on the characteristics of the device current.

• Proceedings of the IEEK Conference
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• 2001.06e
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• pp.237-240
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• 2001

There are several electricity applied sterilizers such as sterilizer with high frequency, sterilizer with ozone, sterilizer with high voltage, and so on. Those sterilizers feature “because there is no chemical process, there is no secondly environmental pollution” At the power conversion part, AVS and ZCS methods have been used that it results in reduced switching loss, miniaturized size, and lightened weight. Besides, the current in the device is smaller than that of existing method. Thus, it is expected that the cost of sterilization process, when quality of the device is measured by power consumption, will be reduced.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.