Browse > Article
http://dx.doi.org/10.5370/JEET.2015.10.3.1066

Partial O-state Clamping PWM Method for Three-Level NPC Inverter with a SiC Clamp Diode  

Ku, Nam-Joon (Dept. of Electrical Engineering, Hanyang University)
Kim, Rae-Young (Dept. of Electrical and Biomedical Engineering, Hanyang University)
Hyun, Dong-Seok (Dept. of Electrical and Biomedical Engineering, Hanyang University)
Publication Information
Journal of Electrical Engineering and Technology / v.10, no.3, 2015 , pp. 1066-1074 More about this Journal
Abstract
This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.
Keywords
Multi-level inverter; PWM method; SiC diode;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC and Si for power devices,” IEEE Trans. Electron. Devices, vol. 40, no. 3, pp. 645-655, Mar. 1993.   DOI   ScienceOn
2 R. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow and J. W. Palmour, “SiC power schottky and PiN diodes,” IEEE Trans. Electron. Devices, vol. 49, no. 4, pp. 665-672, Apr. 2002.   DOI   ScienceOn
3 B. Ozpineci, L. M. Tolbert, S. K. Islam and F. Z. Peng, “Testing, characterization and modeling of SiC diodes for transportation applications,” in IEEE 2002 Power Electronics Specialists Conference, 2002.
4 J. L. Hudgins, G. S. Simin, E. Santi and M. A. Khan, “An assessment of wide bandgap semiconductors for power devices,“ IEEE Trans. Power Electron, vol.18, no. 3, pp. 907-914, May. 2003.   DOI   ScienceOn
5 B. Ozpineci and L. M. Tolbert, “Characterization of SiC schottky diodes at different temperatures,” IEEE Power Electronics Letters, vol. 1, no. 2, pp. 54-57, June. 2003.   DOI
6 S. Kyungmin, M. Kamaga, Y. Tanaka and H. Ohashi, “Optimum combination of SiC-diodes and Si-switching devices in high power application,” in IEEE 2006 Power Electronics Specialists Conference, 2006.
7 M.E. Levinshteina, P.A. Ivanova, M.S. Boltovetsb, V. A. Krivutsab, J. W. Palmourc, M. K. Dasc and Brett A. Hullc, “High-temperature(up to 773K) operation of 6kV 4H-SiC junction diodes,” Solid-State Electronics, vol. 49, no. 7, pp. 1228-1232, July. 2005.   DOI   ScienceOn
8 Q. Zhang, R. Callanan, M. K. Das, S. H. Ryu, A. K. Agarwal and J. W. Palmour, “SiC power devices for microgrids,” IEEE Trans. Power Electron., vol. 25, no. 12, pp.2889-2896, Dec. 2010.   DOI   ScienceOn
9 M. Holza, G. Hultschb, T. Scherga and R. Ruppa, “Reliablility considerations for recent Infineon SiC diode releases,” Microelectronics Reliability, vol.47, no.9, pp.1741-1745, Sep. 2007.   DOI   ScienceOn
10 A. Agarwal, "600V, 1-40A, Schottky diodes in SiC and their applications," [Online] Available : http://www.cree.com/products/pdf/PWRTechnicalPaper1.pdf
11 R. Singh and M. Pecht, “Commercial impact of silicon carbide,” IEEE Ind. Electron. Mag., vol. 2, no. 3, pp. 19-31, Sep. 2008.   DOI
12 G. Spiazzi, S. Buso, M. Citron, M. Corradin and R. Pierobon, “Performance evaluation of a schottky SiC power diode in a boost PFC application,” IEEE Trans. Power Electron., vol. 18, no. 6, pp. 1249-1253, Nov. 2003.
13 A. Elasser, M. H. Kheraluwala, M. Ghezzo, R. L. Steigerwald, N. A. Evers, J. Kretchmer and T. P. Chow, “A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications,” IEEE Trans. Ind. Appl., vol. 39, no. 4, pp. 915-921, Jul. 2003.   DOI   ScienceOn
14 M.M. Hernando, A. Fernandez, J. Garcia, D.G. Lamar and M. Rascon, “Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power factor correction,” IEEE Trans. Ind. Electron., vol.53, no.2, pp.705-707, Apr. 2006.   DOI   ScienceOn
15 J. Sabate, J. M. Rivas, P. Szczesny and L. Stevanovic, “A high-bandwidth high-power inverter,” in IEEE 2009 Power Electronics and Applications Conference, 2009.
16 B. Ozpineci, M. Chinthavali, A. Kashyap, L. M. Tolbert and A. Mantooth, “A 55 kW three-phase inverter with Si IGBTs and SiC schottky diodes,” IEEE Trans. Ind. Appl., vol. 45, no. 1, pp. 278-285, Jan. 2009.   DOI   ScienceOn
17 C. Ho, F. Canales, A. Coccia and M. Laitinen, “A circuit-level analytical study on switching behaviors of SiC diode at basic cell for power converters,” in Proceedings of IEEE Ind. Appl. Soc. Annu. Meet., Oct. 2008.
18 M. Chinthavali, H. Zhang, L. M. Tolbert and B. Ozpineci, “Update on SiC-based inverter technology,” in IEEE 2009 Power Electronic Conference, 2009.
19 K. Takao, Y. Tanaka, S. Kyungmin, K. Wada, T. Shinohe, T. Kanai and H. Ohashi, “3-Level power converter with high-voltage SiC-PiN diode and hardgate-driving of IEGT for future high-voltage power conversion systems,” in IEEE 2010 Applied Power Electronics Conference and Exposition, 2010.
20 C. Ho, H. Breuninger, S. Pettersson, G. Escobar, L. A. Serpa and A. Coccia, “Practical design and implementation procedure of an interleaved boost converter using SiC diodes for PV applications,” IEEE Trans. Power. Electron., vol. 27, no. 1, pp. 2835-2845, Jun. 2012.   DOI   ScienceOn
21 C. Ho, H. Breuninger, S. Pettersson, G. Escobar and F. Canales, “A comparative performance study of an interleaved boost converter using commercial Si and SiC diodes for PV applications,” IEEE Trans. Power. Electron., vol. 28, no. 1, pp. 289-299, Jan. 2013.   DOI   ScienceOn
22 Y. Wang, Q. Zhang, J. Ying and C. Sun, “Prediction of PiN diode reverse recovery,” in IEEE 2004 Power Electronics Specialists Conference, 2004.
23 Yong-Ming Yang, He-Meng Peng and Quan-Di Wang, “Common Model EMI Prediction in Motor Drive System for Electric Vehicle Application,” Journal of Electrical Engineering & Technology, vol. 10, no. 1, pp. 205-215, Jan. 2015.   DOI   ScienceOn
24 G. Busatto, C. Abbate, L. Fratelli, F. Iannuzzo, G. Giannini and B. Cascone, “EMI analysis in high power converters for traction application,” in IEEE 2005 European Conference Power Electronics and Applications, 2005.