• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.4
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• pp.66-73
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• 1997

A capacitor discharge impulse magnetizer using semiconductor switching device is used to produce a high current impulse of short duration in a magnetizing fixture for magnets of the various shapes. The price of today's magnetizer is relatively expensive. This paper described a method for cost estimation of capacitor discharge impulse magnetizer using semiconductor switching device and the economical efficiency analysis. We used a cost structure consisted of five major subsystems. Especially, we estimated the potential for a cost reductions in impulse magnetizer as a function of time using the learning curve, and the potentials of cost by depreciation. The reliable results were obtained by using iron-core fixture coupled to a middle-voltage magnetizer.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3144-3153
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• 1996

ATM switching system is made up of transport network and control newrk according to its functions. The control device, basic part of control network must be developed before developing any other functions, and control device must be stable and need high reliability. Out distributed ATM switching system consists of several ALSs that provides variable local call services, and an ACS that interconnect among several ALSs. Eech ALS has CCCP that takes charage of call and connection control functions, and ACS has an OMP that takes charge of OA&M(Operation, Administration and Maintenance) functios. In this paper, we analyzed the performance evaluation of control device that manipulate subscriber's call based on ITU-T Q.2931 standard protocol messages and Interprocessor communication messages. As a result of simulation when the number of ALS is under 22, as the call arrival rate increase the processor utilization of CCCP increase rapidly than that of OMP. When the number of ALS is incremented to 22, the processor utilization of CCCP is balanced with the of OMP, and when the number of ALS exceeds 22, the processor utiliztion of OMP increase rapidly. Also if messary processing time of OMP is 1.35 times that of CCCP, processor utilizations of CCCP and OMP is equal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.308-309
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• 2008

We have proposed a high performance liquid crystal display using two thin film transistors (TFTs) for the large size TFT-LCD desirably 42inch WXGA panel for TVs. The device generates stronger electric fields to reorient liquid crystals than that in the conventional IPS device because the voltages with opposite polarity with respect to the common electrode are applied to each finger-type electrode. As a result, the operation voltage of 2Tr-IPS mode can be decreased and the transmittance can be increased compared to conventional IPS device. Consequently, the 2Tr-IPS has all the advantages over conventional IPS from large size point of view.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.499-505
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• 2017

Photoisomerizing molecules which can transform their structure by the light irradiation have great deal for the application of photo-switching devices. And azobenzene is the representive type of the photoisomerizing molecules. It can transform their trans- structures into cis- structure as the light for certain wave lengths they receive. This property shows the potential of ON/OFF switching functionalization which can be used into the nano scale photo switch. Furthermore, many studies are interested in the organic linkers that connect the azobenzene and metal electrodes. We used S, $CH_2S$, $(CH_2)_4S$ as the linker to watch the influence of linkers for electronic properties. So We suggest a photoswitching device based on the vertical junction using the first-principles calculations with density functional theory and non-equilibrium Greens function (NEGF). By analyzing the electronic structure and tunneling current caused by the structural difference of the system between cis- and trans- azobenzene, the difference in switching mechanism, ON/OFF ratio and transmission will be watched as the linker changes. And finally We will suggest which linker would be the better for the optimal device architecture which can achieve high control of the ON/OFF photocurrent ratio. This result will show the potential of azobenzene-based photoswitch and provide the critical insight in constructing the optimal device architecture.

• Journal of Power Electronics
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• v.14 no.3
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• pp.531-540
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• 2014

A novel carrier-based PWM (CBPWM) strategy of a three-level NPC converter is proposed in this paper. The novel strategy can eliminate the low-frequency neutral point (NP) voltage oscillation under the entire modulation index and full power factor. The basic principle of the novel strategy is introduced. The internal modulation wave relationship between the novel CBPWM strategy and traditional SPWM strategy is also studied. All 64 modulation wave solutions of the CBPWM strategy are derived. Furthermore, the proposed CBPWM strategy is compared with traditional SPWM strategy regarding the output phase voltage THD characteristics, DC voltage utilization ratio, and device switching losses. Comparison results show that the proposed strategy does not cause NP voltage oscillation. As a result, no low-frequency harmonics occur on output line-to-line voltage and phase current. The novel strategy also has higher DC voltage utilization ratio (15.47% higher than that of SPWM strategy), whereas it causes larger device switching losses (4/3 times of SPWM strategy). The effectiveness of the proposed modulation strategy is verified by simulation and experiment results.

• Journal of Power Electronics
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• v.18 no.6
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• pp.1912-1919
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• 2018

The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.194-195
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• 2002

We report a fast-switching polymer-stabilized bend nematic (PSBN) device. The morphology study reveal a templated polymer networks captures the orientation of the field deformed nematic host.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.743-746
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• 1999

In this paper, Flyback type DC/DC Switching Converter was designed, analyzed and fabricated. Worst Case Analysis(WCA) was peformed with Mathcad program and presents circuit simulation results for the in-rush current limit circuit. The value of the maximum OFF voltage stress is 131.84V, it is less than device specification(200V). The switching frequency(nominal case) and duty cycle at the wont case analysis are 75KHz and 34.62%, respectively. The maximum in-rush current presents 0.5A Those results show a possibility for use in space

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.1853-1859
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• 2008

IGBT modules are designed for low loss, rugged for all environments and user friendly. Low on state saturation voltage with high switching speed is the primary concerns. In this paper selection of IGBT, module ratings and characteristics are discussed. The IGBT design topic of protection against over voltage and over current are covered. Emphasis on turn off switching, short circuit switching and necessary precautions are dealt. Selection of IGBT device, gate drive power, and its lay out considerations are covered in detail.