• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.24-25
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• 2005

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.247-251
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• 2001

Universal motors are mainly used for vacuum cleaner application. There are a lot of researches on SRM that applys home appliance throughout the world. The manufacturing cost of SRM drive makes it hard to expand its application to home appliance. This paper presents Single Phase SRM for the vacuum cleaner that has advantge in cost and performance over conventional universal motor. This paper proposes new power device driving scheme by using SRM switching characteristic. The driving scheme is very simple and inexpensive. Dwell Time Control method is used for the minimum switching loss of power device. The switching frequency of power device is less than 4.5kHz at 45,000rpm. By use of this scheme, power device based on very small switching losses can be used on SRM drive. Also, the biggest problem in single phase SRM is starting, this paper shows a new starting algorithm with two hall sensors, accelerating and running sensors, respectively. Finally, the proposed Single Phase SRM achieves higher efficiency and long life time compared to universal motor. Its life time is more than 1500 hours. Its life time is extended 4 times than that of conventional motor and its suction power is increased $20\%$ at the same volume of conventional universal motor.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 동계학술연구발표회 및 2차 아시안포럼
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• pp.123-123
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• 2005

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1997년도 전력전자학술대회 논문집
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• pp.243-246
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• 1997

In this paper, soft switching high power factor buck converter is proposed. This converter is composed of diode rectifier, a input capacitor can be small enough to filter input capacitor can be small enough to filter input current, buck converter with loss less snubber circuit. Converter is operated in discontinous conduction mode, turn of of the switching device is a zero current switching(ZCS) and high power factor input is obtained. In addition, zero voltage switching(ZVS) at turn of is achieved and switching loss is reduced using loss less snubber circuit. The capacitor used in the snubber circuit raised output voltage. Therefore, proposed converter has higher output voltage and higher efficiency than conventional buck type converter at same duty factor in discontious conduction mode operation.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• 전자공학회논문지S
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• 제34S권6호
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• pp.77-84
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• 1997

buck type converter doesn't appear when an input voltag eis lower than an output voltage. This is the main reason the buck converter has not been used for high power factor converters. In this paper, soft switching high power factor buck converter is proposed. This converter is composed of diode rectifier, input capacitor can be small enough to filter input current, buck converter with loss less snubber circuit. Converter is operated in discontinous conduction mode, turn on of the switching device is a zero current switching (ZCS) and high powr factor input is obtianed. In addition, zero voltage switching (ZVS) at trun off is achieved and switching loss is reduced using loss less snubber circuit. The capacitor used in the snubber circuit raised output voltage. Therefore, proposed converter has higher output voltage and higher efficiency than conventional buck type converter at same duty factor in discontinous conduction mode operation. High power factro, efficiency, soft switching operation of proposed converter is veified by simulation using Pspice and experimental results.