• Title/Summary/Keyword: Switching device

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Fabrication and performance evaluation of ultraviolet photodetector based on organic /inorganic heterojunction

  • Abdel-Khalek, H.;El-Samahi, M.I.;Salam, Mohamed Abd-El;El-Mahalawy, Ahmed M.
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1496-1506
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    • 2018
  • Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

Turning on the Left Side Electrode Changed Depressive State to Manic State in a Parkinson's Disease Patient Who Received Bilateral Subthalamic Nucleus Deep Brain Stimulation: A Case Report

  • Kinoshita, Makoto;Nakataki, Masahito;Morigaki, Ryoma;Sumitani, Satsuki;Goto, Satoshi;Kaji, Ryuji;Ohmori, Tetsuro
    • Clinical Psychopharmacology and Neuroscience
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    • v.16 no.4
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    • pp.494-496
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    • 2018
  • No previous reports have described a case in which deep brain stimulation elicited an acute mood swing from a depressive to manic state simply by switching one side of the bilateral deep brain stimulation electrode on and off. The patient was a 68-year-old woman with a 10-year history of Parkinson's disease. She underwent bilateral subthalamic deep brain stimulation surgery. After undergoing surgery, the patient exhibited hyperthymia. She was scheduled for admission. On the first day of admission, it was clear that resting tremors in the right limbs had relapsed and her hyperthymia had reverted to depression. It was discovered that the left-side electrode of the deep brain stimulation device was found to be accidentally turned off. As soon as the electrode was turned on, motor impairment improved and her mood switched from depression to mania. The authors speculate that the lateral balance of stimulation plays an important role in mood regulation. The current report provides an intriguing insight into possible mechanisms of mood swing in mood disorders.

Fast liquid crystal switching performance on indium zinc oxide films with low curing temperature via ion-beam irradiation (이온빔 조사된 저온 소성 인듐 아연 산화막을 이용한 액정의 고속 스위칭 특성 연구)

  • Oh, Byeong-Yun
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.904-909
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    • 2019
  • Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

Fabrication, Microstructure and Adhesion Properties of BCuP-5 Filler Metal/Ag Plate Clad Material by Using High Velocity Oxygen Fuel Thermal Spray Process (고속 화염 용사 공정을 이용한 스위칭 소자용 BCuP-5 filler 금속/Ag 기판 클래드 소재의 제조, 미세조직 및 접합 특성)

  • Joo, Yeun A;Cho, Yong-Hoon;Park, Jae-Sung;Lee, Kee-Ahn
    • Journal of Powder Materials
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    • v.29 no.3
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    • pp.226-232
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    • 2022
  • In this study, a new manufacturing process for a multilayer-clad electrical contact material is suggested. A thin and dense BCuP-5 (Cu-15Ag-5P filler metal) coating layer is fabricated on a Ag plate using a high-velocity oxygen-fuel (HVOF) process. Subsequently, the microstructure and bonding properties of the HVOF BCuP-5 coating layer are evaluated. The thickness of the HVOF BCuP-5 coating layer is determined as 34.8 ㎛, and the surface fluctuation is measured as approximately 3.2 ㎛. The microstructure of the coating layer is composed of Cu, Ag, and Cu-Ag-Cu3P ternary eutectic phases, similar to the initial BCuP-5 powder feedstock. The average hardness of the coating layer is 154.6 HV, which is confirmed to be higher than that of the conventional BCuP-5 alloy. The pull-off strength of the Ag/BCup-5 layer is determined as 21.6 MPa. Thus, the possibility of manufacturing a multilayer-clad electrical contact material using the HVOF process is also discussed.

Development of Automatic Module Changer for Farmbot (팜봇과 연동하는 작업기 자동체결 장치 개발)

  • Kwon, Junhyuk;Lee, Myungho;Cho, Hyungho;Hong, Hyunggil;Cho, Yongjun;Yun, Haeyong;Oh, Jangseok;Park, Huichang;Gang, Minsu
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.20 no.12
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    • pp.30-35
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    • 2021
  • In this study, we developed an automatic module changer for agricultural implements for using in unmanned agricultural robots. An automatic module changer is attached by lowering from the top to bottom of the implements and fixing the four fastener bars attached to the implements in combination. The lift function was implemented using seesaw-type structures to keep the engagement point constant when the automatic module changer climbs and descends, and the switching function of the automatic module changer was implemented using the link device in the cam structure. We developed an algorithm to check the presence of attachment and opening/closing of the workpiece using limit switches and verified the performance through combination assessment and weight lift test to assess whether the combination was within the error range.

Effect of Post Heat Treatment on the Microstructure and Mechanical Properties of BCuP-5 Filler Metal Coating Layers Fabricated by High Velocity Oxygen Fuel Thermal Spray Process on Ag Substrate (고속 화염 용사 공정으로 제조된 BCuP-5 필러 금속 코팅층/Ag 기판 클래드 소재의 후열처리에 따른 미세조직 및 기계적 특성 변화)

  • Park, So-Yeon;Youn, Seong-June;Park, Jae-Sung;Lee, Kee-Ahn
    • Journal of Powder Materials
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    • v.29 no.4
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    • pp.283-290
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    • 2022
  • A Cu-15Ag-5P filler metal (BCuP-5) is fabricated on a Ag substrate using a high-velocity oxygen fuel (HVOF) thermal spray process, followed by post-heat treatment (300℃ for 1 h and 400℃ for 1 h) of the HVOF coating layers to control its microstructure and mechanical properties. Additionally, the microstructure and mechanical properties are evaluated according to the post-heat treatment conditions. The porosity of the heat-treated coating layers are significantly reduced to less than half those of the as-sprayed coating layer, and the pore shape changes to a spherical shape. The constituent phases of the coating layers are Cu, Ag, and Cu-Ag-Cu3P eutectic, which is identical to the initial powder feedstock. A more uniform microstructure is obtained as the heat-treatment temperature increases. The hardness of the coating layer is 154.6 Hv (as-sprayed), 161.2 Hv (300℃ for 1 h), and 167.0 Hv (400℃ for 1 h), which increases with increasing heat-treatment temperature, and is 2.35 times higher than that of the conventional cast alloy. As a result of the pull-out test, loss or separation of the coating layer rarely occurs in the heat-treated coating layer.

Optimal Design and Analysis of Ducted Fan Clutch With or Without Mechanical Lock-up (기계적 잠금장치의 적용여부에 따른 덕티드팬 클러치의 최적설계 및 분석)

  • Su-chul Kim;Jae-seung Kim;Sang-gon Moon;Geun-ho Lee
    • Journal of Aerospace System Engineering
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    • v.17 no.1
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    • pp.10-15
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    • 2023
  • Wet multi-disk clutch, a power switching device of the ducted fan, was optimized and results were analyzed. The clutch was divided into two types depending on whether a mechanical lock-up was applied or not. It was optimized under each design condition. Transfer torque capacity, friction material surface pressure, friction surface temperature, and drag torque were calculated as factors to optimize the clutch. The volume of separator plate and drag torque were used as the objective function for optimization. In the case of Type 1, which did not include a mechanical lock-up, the clutch could be operated regardless of the pitch angle of the ducted fan. However, the outer diameter of the friction surface was doubled, the volume was increased by 5~7 times, and the drag torque was increased by 7~12 times compared to those of Type 2, which included a mechanical lock-up.

Radiation Resistance Evaluation of Thin Film Transistors (박막트랜지스터의 방사선 내구성 평가)

  • Seung Ik Jun;Bong Goo Lee
    • Journal of the Korean Society of Radiology
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    • v.17 no.4
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    • pp.625-631
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    • 2023
  • The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

Effect of High-Temperature Post-Oxidation Annealing in Diluted Nitric Oxide Gas on the SiO2/4H-SiC Interface (4H-SiC와 산화막 계면에 대한 혼합된 일산화질소 가스를 이용한 산화 후속 열처리 효과)

  • In kyu Kim;Jeong Hyun Moon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.1
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    • pp.101-105
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    • 2024
  • 4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (Ron,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (Dit) at the SiO2/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO2/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N2 diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N2 gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO2/4H-SiC interface, thereby reducing the Dit.

Implementation of a Window-Masking Method and the Soft-core Processor based TDD Switching Control SoC FPGA System (윈도 마스킹 기법과 Soft-core Processor 기반 TDD 스위칭 제어 SoC 시스템 FPGA 구현)

  • Hee-Jin Yang;Jeung-Sub Lee;Han-Sle Lee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.17 no.3
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    • pp.166-175
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    • 2024
  • In this paper, the Window-Masking Method and HAT (Hardware Attached Top) CPU SoM (System on Module) are used to improve the performance and reduce the weight of the MANET (Mobile Ad-hoc Network) network synchronization system using time division redundancy. We propose converting it into a RISC-V based soft-core MCU and mounting it on an FPGA, a hardware accelerator. It was also verified through experiment. In terms of performance, by applying the proposed technique, the synchronization acquisition range is from -50dBm to +10dBm to -60dBm to +10dBm, the lowest input level for synchronization is increased by 20% from -50dBm to -60dBm, and the detection delay (Latency) is 220ns. Reduced by 43% to 125ns. In terms of weight reduction, computing resources (48%), size (33%), and weight (27%) were reduced by an average of 36% by replacing with soft-core MCU.