• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 대한전자공학회논문지SD
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• 제39권4호
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• pp.19-25
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• 2002

본 논문에서는 실리콘 기판상의 전송선로 특성을 개선하기 위하여 표면 마이크로머시닝 기술을 이용하여 10㎛ 두께의 다공질 실리콘 산화막으로 제조된 기판 위에 air-bridge interconnect된 CPW 전송선로를 제작하였다. 간격이 30㎛ 신호선이 80㎛인 CPW air-bridge 전송선의 삽입손실은 4㎓에서 -0.25 ㏈이며, 반사손실은 -28.9 ㏈를 나타내었다. S-W-S = 30-100-30 ㎛인 stepped compensated air-bridge를 가진 CPW는 손실이 4㎓일 때, -0.98 ㏈ 개선됨을 알 수 있었다. 이와 같은 결과로부터 두꺼운 다공질 실리콘은 고 저항 실리콘 집적회로 공정에서 고성능, 저가의 마이크로파 및 밀리미터파 회로 응용에 충분히 활용 될 수 있으리라 기대된다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 춘계학술대회 논문집
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• pp.1051-1054
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• 2000

We developed the micro CSF (celebrospinal fluid) shunt valve with surface and bulk micromachining technology in polymer MEMS. This micro CSF shunt valve was formed with four micro check valves to have a membrane connected to the anchor with the four bridges. The up-down movement of the membrane made the CSF on & off and the valve characteristic such as open pressure was controlled by the thickness and shape of the bridge and the membrane. The membrane, anchor and bridge layer were made of the $O_2$ RIE (reactive ion etching) patterned Parylene thin film to be about 5~10 microns in thickness on the silicon wafer. The dimension of the rectangular nozzle is 0.2＊0.2 $\textrm{mm}^2$ and the membrane 0.45 mm in diameter. The bridge width is designed variously from 0.04 mm to 0.12 mm to control the valve characteristics. To protect the membrane and bridge in the CSF flow, we developed the packaging system for the CSF micro shunt valve with the deep RIE of the silicon wafer. Using this package, we can control the gap size between the membrane and the nozzle, and protect the bridge not to be broken in the flow. The total dimension of the assembled system is 2.5＊2.5 $\textrm{mm}^2$ in square, 0.8 mm in height. We could precisely control the burst pressure and low rate of the valve varing the design parameters, and develop the whole CSF shunt system using this polymer MEMS fabricated CSF shunt valve.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.2004-2006
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• 1996

A thermally driven polysilicon micro actuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS (tetracthylorthosilicate) as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE (vapor phase etching) process was also used as an effective release method for the elimination of sacrificial TEOS layer. The thickneas of polysilicon is $2{\mu}m$ and the lengths of active and passive polysilicon cantilevers are $500{\mu}m$ and $260{\mu}m$, respectively. The actuation is incurred by die thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon micro actuator was experimentally conformed as large as $21{\mu}m$ at the input voltage level of 10V and 50Hz square wave. The actuating characteristics are investigated by simulating the phenomena of heat transfer and thermal expansion in the polysilicon layer. The displacement of actuator is analyzed to be proportional to the square of input voltage. These micro actuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as micro relay, which requires large displacement or contact force but relatively slow response.

• 센서학회지
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• 제9권5호
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• pp.380-388
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• 2000

LIGA-like 공정을 이용하여 고종횡비를 갖는 초소형 니켈 터빈을 제작하기 위하여 블레이드에 대한 유한 요소 해석을 수행하여 안전한 운전 조건을 연구하였다. 이 해석으로부터 터빈의 입구와 출구의 압력 차이가 44kPa 정도일 때에 항복강도를 넘지 않도록 해야 하며 축의 외경과 터빈 날개의 내경 사이의 접촉에 의한 마찰계수와 최대 응력 사이의 관계는 약간 반비례하는 경향을 보였다. 즉, 터빈이 회전하는 상태에서 최대 응력은 접촉 마찰이 증가함에 따라 감소했다. 터빈과 같이 반복하중을 받는 부분은 취성이 강한 실리콘보다는 금속으로 제작해야 하며 이를 위해서는 표면 미세 가공 보다 LTGA-like 공정으로 제작되어야 한다. 본 연구는 초소형 구조물에서 움직이는 부분과 고정된 부분의 접촉 문제를 갖는 여러 종류의 문제를 다루는 데에 이용될 수 있다.

• 한국레이저가공학회지
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• 제11권4호
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• pp.29-34
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• 2008

Ultraviolet laser micromachining has increasingly been applied to the electronics industry where precision machining of high-density, multi-layer, and multi material components is in a strong demand. Due to the ever-decreasing size of electronic products such as cellular phones, MP3 players, digital cameras, etc., flexible printed circuit board (FPCB), multi-layered with polymers and metals, tends to be thicker. In present, multi-layered FPCBs are being mechanically cut with a punching die. The mechanical cutting of FPCBs causes such defects as burr on layer edges, cracks in terminals, delamination and chipping of layers. In this study, the laser cutting mechanism of FPCB was examined to solve problems related to surface debris and short-circuiting that can be caused by the photo-thermal effect. The laser cutting of PI and FCCL, which are base materials of FPCB, was carried out using a pico-second laser(355nm, 532nm) and nano-second UV laser with adjusting variables such as the average/peak power, scanning speed, cycles, gas and materials. Points which special attention should be paid are that a fast scanning speed, low repetition rate and high peak power are required for precision machining.

• 대한기계학회논문집A
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• 제34권11호
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• pp.1765-1771
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• 2010

MEMS 소자의 공정에서 가공된 비아 홀 품질은 소자의 성능에 가장 중요한 요소의 하나이다. Nd:$YVO_4$ 레이저로 가공한 비아 홀에 대한 레이저 미세가공의 일반적인 특징을 설명하고 그것의 측정에 대한 효율적인 최적화 방법을 소개한다. 본 논문의 최적화 방법은 직교다항식, 분산분석과 반응표면최적화는 최적 레이저 공정변수를 결정하고 주요 영향을 이해하는데 사용된다. 유의한 레이저 공정변수를 확인하고 이의 비아 홀 품질에 관한 영향을 고찰하였다. 레이저 공정변수의 최적 수준을 가지는 확인 실험은 최적화 방법의 유효성을 설명하기 위해 수행하였다.

• 대한기계학회논문집A
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• 제26권10호
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• pp.2187-2193
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• 2002

We present a novel method for 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a micro-actuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify the absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose contour are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator (SOI) wafer. 1mm $\times$ 1 mm, 20 $\mu$m thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspension beams and is driven by the comb electrodes. A 10 $\mu$m thick, 50 $\mu$m line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and amplitude are around 3.6 kHz and 20 $\mu$m, respectively, for a do bias of 100 V and an ac bias of 20 $V_{p-p}$ (peak-peak). Fabricated PMMA microstructure shows 15.4 $\mu$m deep, S-shaped cross section in the case of 1.6 kJ $cm^{-3}$ surface dose and GG development at 35$^{\circ}C$ for 40 minutes.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• 대한전자공학회논문지SD
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• 제39권9호
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• pp.11-18
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• 2002

본 논문에서는 표면 마이크로머시닝을 사용하여 10 ${\mu}m$ 두께의 다공질 실리콘 산화막으로 제조된 기판 위에 에어브리지를 가진 CPW phase shifter와 shunt stub을 제작하였다. CPW phase shifter의 크기는 S-W-$S_g$ = 100-30-400 ${\mu}m$로 설계되었다. “ㄷ” 모양을 가진 에오브리지의 폭은 100 ${\mu}m$, 길이는 400-460-400 ${\mu{m$ 이다. 낮은 손실을 얻기 위하여, step 된 에어브리지를 가진 CPW phase shifter가 제안되었다. Step된 에어브리지를 가진 구조가 step이 없는 에어브리지를 가진 구조보다 삽입손실이 보다 더 향상되었다. 제작된 CPW phase shifter의 위상특성은 28 GHz의 넓은 주파수 범위에서 180$^{\circ}$ 의 천이를 나타내었다. 그리고 short-end series stub의 동작주파수는 28.7 GHz이며, 반사손실은 - 20 dB를 나타내었다. 또한 short-end shunt stub의 동작주파수는 28.9 GHz이며, 반사손실은 - 23 dB를 나타내었다. 이상의 결과에서 중앙 전송선에 설계된 stub은 크기 감소로 고 밀도 칩 레이아웃을 이끌 수 있는 장범을 가진다.