• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.232-242
• /
• 2015

Analytical study of surface recombination at the $Si/SiO_2$ interface is carried out in order to set the optimum surface conditions that result in minimum dark base current and maximum open circuit voltage in silicon solar cells. Recombination centers are assumed to form a continuum rather than to be at a single energy level in the energy gap. It is shown that the presence of a hump in the dark I-V characteristics of high efficiency PERL cells is due to the dark current transition from a high surface recombination regime at low voltage to a low surface recombination regime at high voltage. Successful fitting of reported dark I-V characteristics of a typical PERL cell is obtained with several possible combinations of surface parameters including equal electron and hole capture cross sections.

• Solar Energy
• /
• v.8 no.2
• /
• pp.12-18
• /
• 1988

The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.3
• /
• pp.11-17
• /
• 1998

Although GaAs HBTs are very attractive for high power amplifier because of their power handling capablity, they can't be actively commercialized due to the degradation of current gain occured in hihg current operation. In this paper we analyzed the type of current gain degradation of GaAs HBTs under high constant current stress, and identified the mechanism by using two dimensional numerical simulation. The cause of degradation was found out to be the variation of surface recombination states at the interface between GaAs extrinstic base and the nitride passivating the surface of base. The energy radiated from recombination of carriers in bulk as well as near the surface is estimated to activate the change of the surface states.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.12
• /
• pp.83-89
• /
• 1996

The electrochemical spike oscillations at the nickel (Ni) electrode/(0.05M KHC$_{8}$H$_{4}$O$_{4}$) buffer solution (pH 9) interface have been studied using voltammetric and chronoamperometric methods. The nature of the periodic cathodic current spikes is the activation controlled currents due to the hydrogen evolution reaction and depends onthe fractioanl surface coverage of the adsorbed hydrogen intermediate or the cathodic potential. There is two kinds of the waveforms corresponding to two kinds of the cathodic current spike oscillations. The widths, periods, and amplitudes of the cathodic current spikes are 4 ms or 5ms, 151 ms or 302 ms, and < 30 mA or < 275 mA, respectively. The fast discharge and recombination reaction steps are 1.5 times and twice and faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reaction steps are 1.5 times and twice faster than the slow discharge and recombination reaction steps. The fast and slow discharge and recombination reactions corresponding to the fast and slow adsorption sites at the Ni cathode.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.3
• /
• pp.143-151
• /
• 1995

The electrochemical impulse oscillations of the cathodic currents at the platinum group (Pt, Pd) electrode/(0.05M KHC$_{8}H_{4}O_{4}$) buffer solution interfaces have been studied using voltammetric, chronoamperometric, and electrochemical impedance methods. The periodic impulses of the cathodic currents are the activation controlled currents due to the hydrogen evolution reaction, and depend on the fractional surface coverage of the adsorbed hydrogen intermediate and potential. The oscillatory mechanism of the cathodic current impulses is connected with the unstable steady state of negative differential resistance. The widths and periods of the cathodic current impulses are 4ms or 5ms and 152.5ms or 305ms, respectively. The H$^{+}$ discharge reaction step is 38 or 61 times faster thatn the recombination reaction steps and the H$^{+}$ mass transport processes. The atom-atom recombination reaction step is twice faster thatn the atom-ion recombination reaction step. The two kinds of active sites corresponding to the atom-atom and atom-ion recombination reaction steps exist on the platinum group electrode surfaces.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.4
• /
• pp.187-191
• /
• 2004

In this work, we used the PCID simulator for simulation of solar cell and examined the effect of front-back surface recombination velocity, minority carrier diffusion length, junction depth and emitter sheet-resistance. As the effect of base thickness, the efficiency decreased by the increase in series resistance with the increase of the thickness and found decrease in efficiency by decrease of the current as the effect of the recombination. Also, as the effect of base resistivity, the efficiency increased somewhat with the decrease in resistivity, but when the resistivity exceeded certain value, the efficiency decreased as a increase in the recombination ratio. The optimum efficiency was obtained at the resistivity 0.5 $\Omega$-cm, and thickness $100\mu\textrm{m}$. We have successfully achieved 10.8% and 13.7% efficiency large area($103mm{\times}103mm$) mono-crystalline silicon solar cells without and with PECVD silicon nitride antireflection coating.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1230-1234
• /
• 2018

We report a new method of measuring the non-radiative recombination rate in bulk Silicon. Synchrotron timeresolved x-ray scattering (TRXS) combines femtometer spatial sensitivity with nanosecond time resolution to record the temporal evolution of a crystal lattice following intense ultrafast laser excitation. Modeling this data requires an Auger recombination time that is considerably slower than previous measurements, which were made at lower laser intensities while probing only a relatively shallow surface depth. We attribute this difference to an enhanced Coulomb interaction that has been predicted to occur in bulk materials with high densities of photoexcited charge carriers.

• Current Photovoltaic Research
• /
• v.6 no.2
• /
• pp.43-48
• /
• 2018

The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.

• Journal of Electrical Engineering and information Science
• /
• v.2 no.4
• /
• pp.99-105
• /
• 1997

The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.120-123
• /
• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.