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http://dx.doi.org/10.1016/j.cap.2018.05.013

Delayed auger recombination in silicon measured by time-resolved X-ray scattering  

Jo, Wonhyuk (Korea Research Institute of Standards and Science (KRISS))
Landahl, Eric C. (Department of Physics, DePaul University)
Kim, Seongheun (Pohang Accelerator Laboratory)
Lee, Dong Ryeol (Department of Physics, Soongsil University)
Lee, Sooheyong (Korea Research Institute of Standards and Science (KRISS))
Publication Information
Current Applied Physics / v.18, no.11, 2018 , pp. 1230-1234 More about this Journal
Abstract
We report a new method of measuring the non-radiative recombination rate in bulk Silicon. Synchrotron timeresolved x-ray scattering (TRXS) combines femtometer spatial sensitivity with nanosecond time resolution to record the temporal evolution of a crystal lattice following intense ultrafast laser excitation. Modeling this data requires an Auger recombination time that is considerably slower than previous measurements, which were made at lower laser intensities while probing only a relatively shallow surface depth. We attribute this difference to an enhanced Coulomb interaction that has been predicted to occur in bulk materials with high densities of photoexcited charge carriers.
Keywords
Carrier lifetime; Auger recombination; Time-resolved x-ray scattering;
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