• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.380-384
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• 1988

This investigation includes nitridation phenomena of silicon powder compacts in air. Nitridation reaction condition has been provided with using silicon nitride bed and active carbon additive. Reaction products are Oxynitride, $\alpha$-Si3N4, and $\beta$-Si3N4, Oxynitride(Si2N2O) phase in formed at outer surface layer ofsilicon powder compacts. $\alpha$-Si3N4, and $\beta$-Si3N4 are formed at inner region of powder compacts. Microstructural observation indicates that nitridation mechanism in this work is the same as conventional nitridation mechanism nitrogen gas.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1699-1705
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• 1989

Nitridation of about 300\ulcornerSiO2 filmss thermally grown on Si was performed in NH3 plasm ambient (0.2-2 torr) at 900\ulcornerC-1100\ulcorner for 15-20 minutes. The peoperties of those films have been investigated by analyzing the AES and the SIMS data, and the results of the I-V and the C-V measurements. At the plasma ambient of less than 1.5 torr pressure, etching of the films have been shown. Above the 1.5 torr pressure, however, SiO2 films were nitrided as SiIxNy. Plasma thermal nitridation of SiO2 by addition of small amount (6%) of CF4 to the NH3 showed higher pile-up N concentration in the surface region of SiOxNy film. The higher the nitridation temperature is and the longer the nitridation time is the larger the dielectric constant is. The plasma thermal nitridation of silicon dioxide on silicon causes the flat-band voltage shift based on the formation of the positive charge. The conduction mechanism for SiOxNy films could be elucidated by Fowler-Nordheim tnneling model. By SIMS analysis, surface of the film nitrided in plasma process has less contamination than that of the film nitrided in open-tube process.

• Korean Chemical Engineering Research
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• v.60 no.4
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• pp.620-629
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• 2022

By varying various experimental conditions such as heating rate, molar hourly space velocity (MHSV), and nitridation reaction temperature, vanadium oxynitride was prepared through temperature programmed reduction/nitridation reaction (TPRN) of vanadium pentoxide and ammonia, and characterization were performed. In order to investigate the physico-chemical properties of the prepared catalyst, N₂ adsorption-desorption analysis, X-ray diffraction analysis (XRD), hydrogen temperature programmed reduction (H₂-TPR), temperature programmed oxidation (TPO), ammonia temperature programmed desorption (NH₃-TPD), transmission electron microscopy (TEM) was performed. Transformation of V₂O₅ with 5 m² g^-1 low specific surface area by reduction at 340 ℃ to V₂O₃ showed a high specific surface area value of 115 m² g^-1 by micropore formation. As the nitridation temperature increased beyond that, the specific surface area continued to decrease due to sintering. The nitridation reaction variable that had the greatest influence on the specific surface area was the reaction temperature, and the x + y value of VN_xO_y of a single phase approached from 1.5 to 1.0 as the nitridation reaction temperature increased. At a high reaction temperature of 680 ℃, the cubic lattice constant a was VN. close to the value. At 680 ℃, the highest nitridation temperature among the experimental conditions, the ammonia conversion rate was 93%, and no deactivation was observed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.149-153
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• 2019

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.709-715
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• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.249-254
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• 2003

AI, AIN and additives such as Li$_2$CO$_3$, Y$_2$O$_3$ and CaCO$_3$ which promoted nitridation were mixed, formed and heat-treated in nitrogen atmosphere. The effect of solvent, additive and temperature on nitridation of AI-AIN system was studied. When ethanol containing 1 wt% oleic acid was used as a mixing solvent, the formation of oxide was minimized due to surface modification of AI and AIN particles. The addition of Li$_2$CO$_3$ or CaCO$_3$ as an additive extremely diminished the formation of oxide which formed during heat treatment for nitridation compared with the addition of Y$_2$O$_3$.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.305-314
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• 1983

In order to enhance the rate of th nitridation and to give the high density of reaction-bonded silicon nitride MgO powder as nitriding aid were added to silicon powders and the mixture was pressed isostatically into compacts which were nitrided in the furnace of 1, 35$0^{\circ}C$ where 95% $N_2$-5% $H_2$ gases were flowing. As the other nitriding aid $Mg(NO_3)_2 6H_2O$ was selected, A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$. Magnesium oxide-coated silicon powders were formed into compacts prior to the nitridation on the same condition as the former. Magnesium nitrate (MgO, produced from the decomposition of magnesium nitrate) was more effective for the formation of the $\beta$-phase in the initial stage of the nitridation probably due to the easy formation of $MgO-SiO_2$-metal oxide eutectic melt. It has been confirmed that forsterite was formed as a result of the reaction between MgO and $SiO_2$ film of silicon surface. It was considered that MgO produced from magnesium nitrate may be finer more reactive and more uniformly distributed on the surface of silicon particles than original MgO. The higher the forming pressure was the more the $\beta$-phase was formed.

• Journal of Electrochemical Science and Technology
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• v.15 no.4
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• pp.512-520
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• 2024

Given the critical importance of safety in lithium-ion batteries (LIBs), titanium dioxide (TiO₂) is widely regarded as a reliable material for the negative electrode. Anatase TiO₂ is a safe negative electrode material in LIBs, attributed to its high redox potential (1.5-1.8 V vs. Li/Li⁺), which exceeds that of commercially available graphite, alleviating the risk of lithium plating. In addition, TiO₂ has gained considerable attention as a cost-effective negative electrode material for LIBs, owing to its versatility in nano-sized forms. The use of nano-sized TiO₂ as an electrode-active material reduces the diffusion distance of Li⁺ ions. However, TiO₂ is adversely affected by its inherently low electronic conductivity, which hinders its rate performance. Herein, we investigated the surface treatment of commercially available TiO₂ nanoparticles with anatase structure using a heat-treatment process in the presence of urea or thiourea. Our objective was to leverage the eco-friendly nitridation of TiO₂ from the thermal decomposition of urea or thiourea, enhancing their electrochemical performance in lithium-ion batteries while minimizing environmental impact. Specifically, we employed an autogenic reactor (AGR) in a closed space to ensure an adequate reaction between NH₃ and TiO₂, preventing NH₃ from escaping into the external environment, as observed in open systems. Consequently, surface nitridation enhanced the overall electrochemical performance, including the rate capability, capacity retention, and initial Coulombic efficiency (ICE). Notably, a remarkable enhancement was observed for the thiourea-treated TiO₂. Compared to the pristine TiO₂, the thiourea-treated TiO₂ demonstrated a nearly threefold increase in capacity at 1.0 C and a nearly two-fold increase in capacity retention.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.635-641
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• 2021

Cr thin films with O added are deposited on sapphire substrate by DC sputtering and are nitrided in NH₃ atmosphere between 300 and 900 ℃ for various times. X-ray diffraction results show that nitridation begins at 500 ℃, forming CrN and Cr₂N. Cr oxides of Cr₂O₃ are formed at 600 ℃. And, at temperatures higher than 900 ℃, the intermediate materials of Cr₂N and Cr₂O₃ disappear and CrN is dominant. The atomic concentration ratios of Cr and O are 77% and 23%, respectively, over the entire thickness of as-deposited Cr thin film. In the sample nitrided at 600 ℃, a CrN layer in which O is substituted with N is formed from the surface to 90 nm, and the concentrations of Cr and N in the layer are 60% and 40%, respectively. For this reason, CrN and Cr₂N are distributed in the CrN region, where O is substituted with N by nitridation, and Cr oxynitrides are formed in the region below this. The nitridation process is controlled by inter-diffusion of O and N and the parabolic growth law, with activation energy of 0.69 eV.