• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.2
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• pp.110-116
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• 2011

The current study investigated the friction property of angle and width effect for micro-scale grooved crosshatch pattern on SKD11 steel surface against bearing steel using pin-on-disk type. The samples fabricated by photolithography process and then these are carry out the electrochemical etching process. We discuss the friction property due to the influence of a hatched-angle and a width of groove on contact surface. We could be explained the lubrication mechanism for a Stribeck curve. So It was found that the friction coefficient depend on an angle of the crosshatch on contact surface. It was thus verified that micro-scale crosshatch grooved pattern could affect the friction reduction. Also, it is play an important a width of groove to be improved the friction property. I was found that friction property has a relationship between a width and an angle for micro-grooved pattern.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.99-105
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• 2012

We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.10-13
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• 2000

The notching effect in etching of un doped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma, First, in the region of small line width, the potential was increased as a result of ions in the exposed surface of oxide, and the incident ions between the small line width were deflected more wide range, therefore the depth of notching was shallow and wide, Second, in the region of large line width of gate, electrons were charged on the top of photoresist and the side of gate, a part of ions deflected, The deflected ions were locally charged positive on the side of gate, and then the potential difference was produced, therefore, ions stored up more at independent line than at dense line, and nothing became deeper by Br ion bombardment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.651-657
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• 2000

The notching effect in etching of undoped amorphous silicon gate had different characteristics and mechanism comparing with reported ones. The undoped amorphous silicon was etched by using HBr gas plasma. First in the region of small line width the potential increased as a result of ions in the exposed surface of oxide and the incident ions between the small line widths were deflected more wide range therefore the depth of notching was shallow and wide. Second in the region of large line width of gate electrons were charged on the top of photoresist and the side of gate a part of ions deflected. The deflected ions were partly charged positive on the side of gate and then these partly charged ions produced potential difference. Therefore ions stored up more at independent line than at dense line and notching became deeper by Br ion bombardments.

• Journal of Technologic Dentistry
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• v.11 no.1
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• pp.83-88
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• 1989

This investigation was performed to evaluate the effect of four different preteatment techniques on the bond strength of porcelain to non-precious metal alloy. Samples of total of 40 were divided into 4 groups according to the 4 variables which included the 50$\mu$alumina oxide air abrasion, method, the as retention bead method, the L-retention bead method, the Etching method. The completed metal-porcelain samples were compressed in Instron loading machine until gross fracture occured to examine the effect of the complex variables on the bond strength of porcelain to non precious metal alloy. The result obtained were as follows : 1. The difference of bond strength according to four different pretreatment techniques was statistically significant(p<0.01). 2. The difference of bond strength between the ss-retention bead method and the L-retention bead method was not significant statistically(p>0.05) 3. The difference of bond strength between the retention bead method and the etching method was statistically significant(p<0.01). 4. The difference of bond strength between the retention bead method and the 50$\mu$alumina oxide air abrasion method was statistically significant(p<0.01). 5. The difference of bond strength between the etching method and the 50$\mu$alumina oxide air abrasion method was statistically significant(p<0.01).

• Restorative Dentistry and Endodontics
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• v.28 no.6
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• pp.491-497
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• 2003

The purpose of this study was to evaluate the correlation between hybrid layer thickness and bond strength using confocal laser scanning microscope and microtensile bond strength test of two adhesive systems. The dentin surface of human molars. sectioned to remove the enamel from the occlusal surface. Either Scotchbond Multi-Purpose(3M Dental Product, St. Paul, MN, U.S.A) or Clearfil SE Bond (Kuraray, Osaka, Japan) was bonded to the surface. and covered with resin-composite. The resin-bonded teeth were serially sliced perpendicular to the adhesive interface to measure the hybrid layer thickness by confocal laser scanning microscope. The specimen were trimmed to give a bonded cross-sectional surface area of $1\textrm{mm}^2$, then the micro-tensile bone test was performed at a cross head speed of 1.0 mm/min. All fractured surfaces were also observed by stereomicroscope. There was no significant differences in bond strengths the materials(p>0.05). However. the hybrid layers of three-step dentin adhesive system, SM, had significantly thicker than self-etching adhesive system. CS(p<0.05). Pearson's correlation coefficient showed no correlation between hybrid layer thickness and bond strengths(p>0.05). Bond strengths of dentin adhesive systems were not dependent on the thickness of hybrid layer.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.7-12
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• 2023

The edge ring placed on the outside of the electrostatic chuck (ESC) is a key component for protecting the ESC and controlling the etching uniformity of the edge of the wafer. Therefore, it is very important to understand the etching phenomenon of edge rings for edge ring management and equipment homeostasis. In this study, a specimen with SiO₂ hard mask and underlying Si mold was installed on the edge ring surface and the etching results were measured by varying the edge ring 2MHz RF power. By developing PI-VM model with high prediction accuracy and analyzing the roles of key parameters in the model, we were able to evaluate the effect of plasma and sheath characteristics around the edge ring on edge ring erosion. This analysis method provided information necessary for edge ring maintenance and operation.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.5
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• pp.501-513
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• 2004

Purpose : The purpose of this study was to evaluate the effects of etching time on shear bond strength of four resin cements to IPS Empress 2 ceramic. Material and Methods: Forty rectangular shape ceramic specimens ($10{\times}15{\times}3.5mm$ size) were used for this study. The ceramic specimens divided into four groups and were etched with 10% hydrofluoric acid for 0, 10, 30, 60, 180, 300, 420, 600, and 900 seconds respectively. Etched surfaces of ceramic specimens were coated with ceramic adhesive system and bonded with four resin cement (Variolink II, Panavia F, Panavia 21, Super-Bond C&B) using acrylic glass tube. All cemented specimens were tested under shear loading untill fracture on universal testing machine at a crosshead speed 1mm/min: the maximum load at fracture (kg) was recored. Shear bond strengh data were analyzed with oneway analysis of variance and Tukey HSD tests (p<.05). Etched ceramic surfaces (0-, 60-, 300-, and 600-seconds etching period) and fracture surfaces after shear testing were examined mophologically using scanning electron microscopy. Results : Ceramic surface treatment with 10% hydrofluoric acid improved the bond strength of three resin cement except for Super-Bond C&B cement. Variolink II (41.0$\pm$2.4 MPa) resin cement at 300-seconds etching time showed statistically higher shear bond strength than the other resin cements (Panavia F: 28.3$\pm$2.3 MPa, Panavia 21: 21.5$\pm$2.2 MPa, Super-Bond C&B: 16.7$\pm$1.6 MPa). Ceramic surface etched with 10% hydrofluoric acid for 300 seconds showed more retentive surface texture. Conclusion: Within the limitation of this study, Variolink II resin cement are suitable for cementation of Empress 2 all-ceramic restorations and etching with 10% hydrofluoric acid for 180 to 300 seconds is required to enhance the bond strength.