• Applied Science and Convergence Technology
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• v.27 no.4
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• pp.65-69
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• 2018

We studied the critical pressure characteristics of an anode type ion beam source driven by both charge repulsion and diffusion mechanism. The critical pressure $P_{crit}$ of the diffusion type ion beam source was linearly decreased from 2.5 mTorr to 0.5 mTorr when the gas injection was varied in 3~10 sccm, while the $P_{crit}$ of the charge repulsion ion beam source was remained at 3.5 mTorr. At the gas injection of 10 sccm, the range of having normal beam shape in the charge repulsion ion beam source was about 6.4 times wider than that in the diffusion type ion beam source. An impurity of Fe 2p (KE = 776.68 eV) of 12.88 at. % was observed from the glass surface treated with the abnormal beam of the charge repulsion type ion beam source. The body temperature of the diffusion type ion beam source was observed to increase rapidly at the rate of $1.9^{\circ}C/min$ for 30 minutes and to vary slowly at the rate of $0.1^{\circ}C/min$ for 200 minutes for an abnormal beam and normal beam, respectively.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Journal of Powder Materials
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• v.10 no.6
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• pp.374-382
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• 2003

During the sintering of powder materials, many these are microstructural phenomena are caused by atomic diffusion. (1) neck formation and compact densification, (2) grain growth, i.e., growth of matrix grains and dispersed grains, (3) alloying or generation of compound, (4) generations of peculiar and hard layers near sintered compact surface, etc. The studies of the present author and co-workers on these phenomena which were carried out during 40 years are briefly introduced.

• Journal of the Korean Ceramic Society
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• v.18 no.2
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• pp.79-82
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• 1981

SiC powder was heated in air over the temperature range of 1100-135$0^{\circ}C$. $\beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $\beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $\beta$-cristobalite layer was obtained as the following equation: $D=3.84{\times}10^{-17}$exp(-14.7/RT)

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2008.10a
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• pp.69-70
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• 2008

The study has attempted to prepare nanocapsules containing Tricrecyl phosphate by Emulsion-diffusion method. The study has focused on finding a optimum condition for preparering nano capsules and effect on size distribution and surface morphology.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.115.1-115.1
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• 2014

Atom-thick 2-dimensional materials such as graphene, h-BN and MoS2 hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. From a fundamental point of view, 2-dim crystal-solid substrates can also serve as a unique system to study various physicochemical phenomena occurring at low dimensions or interfaces. In this talk, I will present our recent Raman spectroscopy studies on the surface science problems of graphene: interfacial charge transfer, molecular diffusion in confined space and structural deformation.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.89-94
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• 1992

The kinetics of volatilization of phosphorous oxide from phosphosilicate glassceramic powders prepared by a sol-gel process were investigated at a given temperature. The rate of P2O5 vaporization increased with the P2O5 concentration in the phosphosilicate powder. Vaporization from the powder containing 46% P2O5 was analyzed using a kinetic model for diffusion limited evaporation. The diffusion through phosphosilicate glass in the surface of each particle in the temperature range 800~85$0^{\circ}C$ are presented.

• Journal of the Korean institute of surface engineering
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• v.29 no.4
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• pp.278-285
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• 1996

The structure of coating layer formed by hot dip Al-Cu alloy coating on Monel 1400 metal was studied. The coating layer consists of alloyed layer adjacent to the Monel 400 substrate and Al-Cu alloy. It was found that the hardness of coating increased with dipping time and heat treatment associated with the diffusion and the formation of intermetallic compound at the interface. However the thickness of coating layer was decreased at high dipping temperature due to tile higher viscosity of liquid coating alloy. Diffusion heat treatment at $600^{\circ}C$ after coating resulted in the disappearence of adhered Al(Cu) and $CuAl_2$ phases, and then they transformed into the new phases of CuAl and Al7Cu4Ni at coating layer.

• Journal of the Korean institute of surface engineering
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• v.22 no.2
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• pp.55-61
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• 1989

A fuel cell which causes electrochemical ratio of conventional with oxygen consists of mainly there parts, such as electrolyte, fuel and oxidant electrode. IN this paper, most efforts were delivered to manufacturing PETE-bonded gas-diffusion electrode, and preparation methods of the porous electrodes has been discussd. A medio temperature, phosphoric acid fuel cell (PAFC) provided with fuel (hydrogen) and oxygen showed oxygen showed excellent performance characteristics with made electrodes. Performance data obtained from hydrgen-oxygen cell were presented to illustrate their properties. It was found that the optimum amounts of platinum in clectrode for hydrgen-oxygen PAFC were about 3mg/cm3 and the PTFE content of gas diffusion layer and catalyst layer were 25% and 15%, respectively.

• Membrane Journal
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• v.7 no.1
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• pp.1-10
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• 1997

A review is presented for various gas transport mechanisms through microporous membranes of both polymeric and inorganic materials. Different transport modes manifest depending on the pore size and the flow regime, which is a function of pressure, temperature, and the interaction between gas molecules and the pore walls. For microporous membranes whose pores are small and the internal surface area huge, the surface diffusion becomes a significant factor. If the pores become even smaller, then the transport mechanism will be more of an activated diffusion type. When conditions are right capillary condensation will take place to create an enormous capillary pressure gradient, which will greatly enhance the permeation flux. At the same time the capillary condensate of the heavier component may block the membrane pores denying the passage of the lighter gas molecules. All of these phenomena will influence the separation of mixtures.