• Journal of the Korean earth science society
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• v.32 no.4
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• pp.360-372
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• 2011

In order to clarify the advection and dispersion characteristics of volcanic tephra to be emitted from the Mt. Baekdu, several numerical experiments were carried out using three-dimensional atmospheric dynamic model, Weather and Research Forecast (WRF) and Laglangian particles dispersion model FLEXPART. Four different temporally averaged meteorological values including wind speed and direction were used, and their averaged intervals of meteorological values are 1 month, 10 days, and 3days, respectively. Real time simulation without temporal averaging is also established in this study. As averaging time of meteorological elements is longer, wind along the principle direction is stronger. On the other hands, the tangential direction wind tends to be clearer when the time become shorten. Similar tendency was shown in the distribution of volcanic tephra because the dispersion of particles floating in the atmosphere is strongly associated with wind pattern. Wind transporting the volcanic tephra is divided clearly into upper and lower region and almost ash arriving the Korean Peninsula is released under 2 km high above the ground. Since setting up the temporal averaging of meteorological values is one of the critical factors to determine the density of tephra in the air and their surface deposition, reasonable time for averaging meteorological values should be established before the numerical dispersion assessment of volcanic tephra.

• Journal of the Korean Electrochemical Society
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• v.2 no.2
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• pp.75-80
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• 1999

Li-ion cells employ lithium transtion metal oxide as the cathode material and carbon as anode material. To manufacture Li-ion cell with higher capacity and better cycle life, the utilization of electrode materials should be as high as possible without lithium deposition onto the carbon surface during charging. A careful design of cell balance between cathode and anode materials as well as a proper charge method is a key factor to design Li-ion cell with long cycle life. In this study, we investigated the effect of cathode/anode weight ratio on the performance of $LiCoO_2/MPCF$ cell. First we evaluated the charge-discharge behaviours of half-cells. And cylindrical Li-ion cells were fabricated using graphitized MPCF anode and $LiCoO_2$ cathode. The voltage profiles for each half-cell in $LiCoO_2/MPCF$ cell were measured by using lithium metal as a reference electrode. Also, we evaluated the cyclic performance of $LiCoO_2/MPCF$ cells according to weight ratio. From the result of experiment $LiCoO_2$ cathode utilization was independent of weight ratio, but MPCF anode utilization was dependant on weight ratio. Also, the optimal weight ratio of $LiCoO_2/MPCF$ cell was found to be $2.0\~2.2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Journal of Periodontal and Implant Science
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• v.35 no.1
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• pp.235-250
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• 2005

The current interest in periodontal tissue regeneration has lead to research in bone graft, root surface treatments, guided-tissue regeneration, administration of growth factors, and the use of enamel matrix protein as possible means of regenerating lost periodontal tissue. Several studies have shown that a strong correlation between platelet-rich plasma and the stimulation of remodeling and remineralization of grafted bone exits, resulting in a possible increase of 15-30% in the density of bone trabeculae. The purpose of this study was to study the histopathological results and differences between the use of platelet-rich plasma and the use of enamel matrix $protein(Emdogain^?)$ about bone regeneration at the implant. Implant fixtures were inserted and graft materials placed into the left femur in the experimental group, while the only implant fixtures placed in the control group. In the first experimental group, platelet-rich plasma and xenograft were placed at the supracrestally placed implant site, and in the second experimental group, $Emdogain^{(R)}$ and xenograft placed at the supracrestally placed fixture site. The degree of bone regeneration adjacent to the implant fixture was observed and compared histopathologically at 2, 4, and 8 weeks after implant fixture insertion. The results of the experiment are as follows: 1. The rate of osseointegration to the fixture threads was found to be greater in the experimental group compared to in the control group. 2. The histopathological findings showed that the bone regeneration, the partial osseointegration existed at 4 weeks, and that osseointegration and bone density increaced in the experimental groups at 8 weeks. 3. The results showed that new bone formation and bone remodeling increased in the area near to the fixture in the first and second experimental groups at 8 weeks than at 4 weeks. The results showed that in the area distant from the fixture, new bone formation did not increase and bone remodeling decreased in the first experimental group at 4, 8 weeks, and that new bone formation increased in the second experimental group. 4. The histopathological findings showed that AZ deposition in the first experimental group was remarkable at 2, 8 weeks, and in the second experimental group at 2, 4, 8 weeks in the area distant from the fixture threads.

• Journal of Radiation Protection and Research
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• v.28 no.4
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• pp.271-279
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• 2003

Soil blocks were taken into culture boxes from 12 paddy fields within 5 km radii of Yonggwang and Ulchin NPPs and $^{90}Sr$ was applied to the surface water at a pre-transplanting stage and $1{\sim}2$ days before the start of heading. Following the pre-transplanting application, transfer factors were investigated for $2{\sim}4$ years. In the year of application, transfer factors $(m^2\;kg^{-1}-dry)\;of\;^{90}Sr$ applied before transplanting, showing no regionally distinguishable trend, varied with soils by a factor of about 2 with averages of $2.6{\times}10^{-4}$ for hulled seeds and $1.3{\times}10^{-2}$ for straw Transfer factors of $^{90}Sr$ applied shortly before heading were about 2 times greater than those applied before transplanting. Transfer factors tended to decrease with increasing soil pH and exchangeable Ca. Generic values of $^{90}Sr$ transfer factors in the year of deposition were proposed for the Korean paddy fields. In the second year compared with the first year, the transfer factor decreased more in Ulchin soils, which were on the whole higher in sand content, than in Yonggwang soils. For Yonggwang soils as a whole, the annual decrease in transfer factor was well described by an exponential equation with a half-life of about 2.2 years.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.10
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• pp.788-795
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• 2013

A magnesium bipolar plate whose surface was protected by thinly deposited silver layer was investigated as an alternative to existing graphite bipolar plate of PEM fuel cells. Thin silver layer of $3{\mu}m$ was deposited on a magnesium alloy substrate by physical vapor deposition (PVD) method in an environment of $180^{\circ}C$. A number of tests were conducted on the fabricated magnesium based bipolar plates to determine their suitability for use in PEM fuel cell stacks. The test on corrosion resistance in the same pH condition as in a PEM operation demonstrated the layer protected the magnesium alloy substrate, while unprotected substrate suffered from severe corrosion. The contact resistance of the fabricated bipolar plate was less than $20m{\Omega}-cm^2$ which was superior to the conventional bipolar plates. A single cell was constructed using the fabricated bipolar plates and power output was measured. Due to the enhanced conductivity caused by low contact resistance, slight increase was observed in current density and output voltage. With low density of the magnesium substrate and ease on machining, the weight reduction of the stack of 30~40 % is possible to produce the same power output.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.67-72
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• 2008

We have studied the effect of heat treatment of multi-walled carbon nanotubes (MWNTs) as a counter electrode on the electro-chemical properties of dye-snsitized solar cells. MWNTs on the p-type Si substrate were synthesized by thermal chemical vapor deposition (CVD) using Fe catalysts. We prepared the two types of MWNTs samples with the different diameters. The rapid thermal annealing (RTA) treatment for the MWNTs was carried out at the growth temperature ($900^{\circ}C$) for 1 minute with $N_2$ gas atmosphere. The structural, electrical and electrochemical properties of MWNTs were investigated by field-emission scanning electron microscopy (FE-SEM), Raman spectroscopy, 2-point probe station and electrochemical impedance spectroscopy (EIS). The I(D)/I(G) ratio of heat-treated MWNTs in Raman spectra was considerably decreased. It was also found that the heat-treated MWNTs showed better redox reaction of iodide at the interface between MWNTs surface and electrolyte than that of as-grown MWNTs. The redox resistance value of heat-treated electrodes was measured to be much lower than that of as-grown electrode at the interface. As a result, the counter electrode using the heat-treated MWNTs showed better electrochemical properties.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.176-182
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• 2002

Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.