• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.270-275
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• 2012

Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.

• 전기전자학회논문지
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• 제18권4호
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• pp.532-535
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• 2014

본 논문에서는 Super Juction MOSFET의 우수한 열 특성을 검증하기 위해 도출된 공정 및 설계파라미터를 이용하여 열특성을 분석하였다. 열 특성 중 핵심공정인 Trench 식각 각도에 따른 온도차이, 열 저항, 그 때 흐르는 드레인 전류를 측정하여 전체 소비전력을 분석하였다. 분석한 결과 Trench 식각 각도가 $89.3^{\circ}$ 일 때 온도차와 열 저항 값이 가장 작게 나왔으며, 식각 각도에 따라서 분포는 경향성을 보이지 않았다. 따라서 반복 시뮬레이션과 실험을 통해 최적의 값을 도출해야 되며, 본 측정 결과 최적의 식각 각도는 $89.3^{\circ}$와 $89.6^{\circ}$의 결과를 보였다. 다른 전기적인 특성을 고려하여 최종 식각 각도를 보여야 하며, 열 특성의 우수한 SJ MOSFET이 산업에의 이용을 위해 본 논문의 자료가 충분히 활용할 수 있을 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.613-617
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• 2014

This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.551-554
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• 2014

This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.587-590
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• 2013

Release competition and development of eco-friendly vehicles have been conducted violently also automaker, it will be a high growth industry of the charger and battery, which is the driving source of the motor of an electric vehicle. Reduces the on-resistance power elements DC - DC converter for battery charger for electric vehicles, must minimize switching losses. Should have a low on-resistance power than existing products. Compare the Super Junction MOSFET and Planar MOSFET, As a result, super junction MOSFET improve on about 87.4% on-state voltage drop performance than planar MOSFET.

• 전기전자학회논문지
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• 제22권3호
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• pp.565-569
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• 2018

For the conventional power MOSFET (metal-oxide semiconductor field-effect transistor) device structure, there exists a tradeoff relationship between specific on-state resistance (Ron,sp) and breakdown voltage (BV). In order to overcome this tradeoff, a super-junction (SJ) trench MOSFET (TMOSFET) structure with uniform or non-uniform doping concentration, which decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top, for an optimal design is suggested in this paper. The on-state resistance of $0.96m{\Omega}-cm2$ at the SJ TMOSFET is much less than that at the conventional power MOSFET under the same breakdown voltage of 100V. A design methodology for the edge termination is proposed to achieve the same breakdown voltage and on-state resistance as the main body of the super-junction TMOSFET by using of the SILVACO TCAD 2D device simulator, Atlas.

• 전기전자학회논문지
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• 제17권3호
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• pp.360-364
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• 2013

The maximum breakdown voltage's characteristic within the Super Junction MOSFET structure comes from N-Drift and P-Pillar's charge balance. By developing P-Pillar from Planar MOSFET, it was confirmed that the breakdown voltage is improved through charge balance, and by setting the gate voltage at 10V, the characteristic comparisons of Planar MOSFET and Super Junction MOSFET are shown in picture 6. The results show that it had the same breakdown voltage as Planar MOSFET which increased temperature resistance by 87.4% at $.019{\Omega}cm^2$ which shows that by the temperature resistance increasing, the power module's power dissipation improved.

• ETRI Journal
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• 제34권1호
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.501-504
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• 2014

This paper was developed and described core-process to implement low on resistance which was the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation, SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process was similar to genral planar MOSFET, so the process was the same as the general planar MOSFET. And then to develop deep trench process which was main process of the whole process, after finishing photo mask process, we developed deep trench process. We expected that developed process was necessary to develop SJ MOSFET for automobile semiconductor.