• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.7
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• pp.33-39
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• 2015

In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.

• Journal of IKEEE
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• v.25 no.3
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• pp.501-505
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• 2021

In this study, we fabricated amorphous indium-tin-gallium-zinc-oxide thin-film transistors (a-ITGZO TFTs) with gate dielectrics of HfO₂ and the mixed layers of HfO₂ and Al₂O₃, and investigated the effect of gate dielectric on electrical characteristics of a-ITGZO TFTs. When only HfO₂ was used as the gate dielectric, the mobility and subthreshold swing (SS) were 32.3 cm²/Vs and 206 mV/dec. For the a-ITGZO TFTs with gate dielectric made of HfO₂ and Al₂O (2:1, 1:1), the mobilities and SS were 26.4 cm²/Vs (2:1), 16.8 cm²/Vs(1:1), 160 mV/dec (2:1) and 173 mV/dec (1:1). On the other hand, the hysteresis window shown in transfer curves of the a-ITGZO TFTs was lessened from 0.60 to 0.09 V by the increase of Al₂O₃ ratio in gate dielectric, indicating that the interface trap density between the gate dielectric and channel layer decreases due to Al₂O₃.

• Anxiety and mood
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• v.18 no.2
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• pp.39-47
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• 2022

Objective : This study investigated brain functional connectivity in male firefighters who showed subclinical post-traumatic stress disorder (PTSD) symptoms. Methods : We compared the data of 17 firefighters who were not diagnosed with PTSD and 18 healthy controls who had no trauma exposure. The following instruments were applied to assess psychiatric symptoms: Korean version of the Post-traumatic stress disorder Checklist for DSM-5 (PCL-5-K), Beck Depression Inventory-II (BDI-II), Beck Anxiety Inventory (BAI). For all subjects, functional magnetic resonance imaging was performed, and functional connectivity was compared between the two groups (family-wise error-corrected p<0.05). Additionally, correlations between psychiatric symptoms and functional connectivity were explored. Results : The following connectivity was higher than that of healthy controls: 1) the central opercular cortex-superior temporal gyrus, 2) planum polare-parahippocampal gyrus, 3) angular gyrus-amygdala, and 4) temporal fusiform cortex-parahippocampal gyrus. The functional connectivity of 1) the lateral occipital cortex-inferior temporal gyrus, 2) superior parietal lobule-caudate, and 3) middle temporal gyrus-thalamus were lower in firefighters. In firefighters, the connectivity of the planum polare-parahippocampal gyrus showed a negative correlation with the severity of arousal symptoms (rho=-0.586, p=0.013). The connectivity of the middle temporal gyrus-thalamus showed a positive correlation with the severity of intrusion (rho=0.552, p=0.022) and arousal symptoms (rho=0.619, p=0.008). The connectivity of the temporal fusiform cortex-parahippocampal gyrus was negatively correlated with intrusion (rho=-0.491, p=0.045) and arousal (rho=-0.579, p=0.015). Conclusion : Our results indicate that the brain functional connectivity is associated with occupational trauma exposure in firefighters without PTSD. Therefore, this study provides evidence that close monitoring and early intervention are important for firefighters with traumatic experience even at a subthreshold level.

• Journal of IKEEE
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• v.27 no.4
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• pp.644-649
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• 2023

As the cell spacing decreases during the scaling process of DRAM(Dynamic Random Access Memory), the reduction in STI(Shallow Trench Isolation) thickness leads to an increase in sub-threshold leakage due to the passing word line effect. The increase in sub-threshold leakage current caused by the voltage applied to adjacent passing word lines affects the data retention time and increases the number of refresh operations, thereby contributing to higher power consumption in DRAM. In this paper, we identify the causes of the passing word line effect through TCAD Simulation. As a result, we confirm the DRAM operational conditions under which the passing word line effect occurs, and observe that this effect alters the proportion of the total leakage current attributable to different causes. Through this, we recognize the necessity to consider not only leakage currents due to GIDL(Gate Induced Drain Leakage) but also sub-threshold leakage currents, providing guidance for improving DRAM structure.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.56-63
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• 2023

In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N₂) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.37-43
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• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

• Journal of the Korean Society of Food Science and Nutrition
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• v.35 no.8
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• pp.979-984
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• 2006

Although iron is essential for many physiological processes, excess iron can lead to tissue damage by promoting the generation of reactive oxygen species (ROS). There is increasing evidence that ROS might play an important role in the pathogenesis of cardiovascular disease. However, the effects of iron excess on platelet function and the thrombotic response to vascular injury are not well understood. We examined the effects of iron excess-induced oxidative stress and the antioxidants on platelet aggregation. Oxidative stress was accessed by either free iron $(Fe^{+2})$ or hydrogen peroxide $(H_2O_2)$, as well as their combination on washed rabbit platelets (WPs) in vitro. When WPs were stimulated with either $Fe^{+2}$ alone or a subthreshold concentration of collagen, which gave an aggregatory curve with a little effect, and a dose dependent increase in platelet aggregation was observed by increasing concentrations of $Fe^{+2}$ with $H_2O_2$. This aggregation was associated with the iron-catalyzed formation of hydroxyl radicals from $H_2O_2$, and were inhibited by NAD/NADP (proton acceptor), catalase $(H_2O_2\;scavenger)$, tiron (iron chelator), mannitol (hydroxyl radical scavenger), and indomethacin (cyclooxygenase inhibitor), but not by NADH/NADPH (proton donor), superoxide mutase, and aspirin. However, NADH/NADPH, an essential cofactor for the antioxidant capacity by the supply of reducing potentials, showed the effect of an enhanced radical formation, suggesting a role for NADH/NADPH-dependent oxidase. These results suggest that iron $(Fe^{+2})$ can directly interact with washed rabbit platelets and this aggregation be mediated by OH formation as in the Fenton reaction, inhibited by radical scavengers.