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http://dx.doi.org/10.5573/ieie.2015.52.7.033

Stability Enhancement of IZOthin Film Transistor Using SU-8 Passivation Layer  

Kim, Sang-Jo (Department of Electrical and Computer Engineering, Pusan National University)
Yi, Moonsuk (Department of Electronic Engineering, Pusan National University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.52, no.7, 2015 , pp. 33-39 More about this Journal
Abstract
In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.
Keywords
SU-8; passivation; solution-process; oxide-TFT; PBS;
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