• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.112-116
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• 2015

This work studied the thickness and contact angle of solder joints between SAC 305 lead-free solder alloy and a Copper (Cu) substrate. Intermetallic compound (IMC) thickness and contact angle of 3Sn-Ag-0.5Cu (SAC 305) leadfree solder were measured using varying aging times, at a fixed temperature at 30℃. The thickness of IMC and contact angle depend on the aging time. IMC thickness increases as the aging increases. The contact angle gradually decreased from 39.49° to 27.59° as aging time increased from zero to 24 hours for big solder sample. Meanwhile, for small solder sample, the contact angle increased from 32.00° to 40.53° from zero to 24 hours. The IMC thickness sharply increased from 0.007 mm to 0.011 mm from zero to 24 hours aging time for big solder. In spite of that, for small solder the IMC thickness gradually increased from 0.009 mm to 0.017 mm. XRD analysis was used to confirm the intermetallic formation inside the sample. Cu₆Sn₅, Cu₃Sn, Ni₃Sn and Ni₃Sn₂ IMC layers were formed between the solder and the copper substrate. As the aging time increased, the strength of the solder joint mproved due to reduced contact angle.

• 대한전자공학회논문지SD
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• 제42권1호
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• pp.9-17
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• 2005

공진주파수 스펙트럼법을 이용하여 ZnO 와 AIN 압전박막의 임피던스 특성 및 전기기계결합계수 특성에 대해 조사하였다. 압전박막의 두께가 얇을수록 전체적인 임피던스 응답 피크의 크기가 감소하였으며, 기판의 두께가 얇을수록 응답 피크의 모드 수가 감소하는 것이 관찰되었다. 입력 Kt² 값으로부터 평가된 Kt² 값을 통해 압전박막의 두께보다 기판의 두께 변화에 대한 영향이 더 큼을 알 수 있었고, 기판의 acoustic 임피던스에 의해서도 Kt² 값이 감소함을 알 수 있었다. 전극 효과가 첨가되면 임피던스 응답 피크의 크기가 감소하였으며, 전극의 acoustic 임피던스가 커짐에 따라 응답피크는 더 작아졌다. 공진주파수 스펙트럼법에서 전극은 질량부하로 고려되기 때문에 전극 효과가 첨가된 경우 Keff² 값은 증가하며, 전극의 acoustic 임피던스가 크면 그 효과는 더 커졌다. 공진주파수 스펙트럼법을 이용한 시뮬레이션을 통해 기판, 압전체, 전극으로 이루어진 composite 공진기의 특성 분석과 설계까지도 가능함을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• 센서학회지
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• 제30권4호
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• pp.267-272
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• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.

• Advances in nano research
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• 제14권1호
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• pp.27-43
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• 2023

This article investigates the energy harvesting characteristics of a magneto-electro-elastic (MEE) cantilever beam reinforced with carbon nanotubes (CNT) under transverse vibration. To this end, the well-known lumped parameter model is used to represent the coupled multiphysics problem mathematically. The proposed system consists of the MEE-CNT layer on top and an inactive substrate layer at the bottom. The substrate is considered to be made of either an isotropic or composite material. Basic laws such as Gauss's Law, Newton's Law and Faraday's Law are used to arrive at the governing equations. Surface electrodes across the beam are used to harvest the electric potential produced, together with a wound coil, for the generated magnetic potential. The influence of various distributions of the CNT and its volume fraction, substrate material, length-to-thickness ratio, and thickness ratio of substrate to MEE layer on the energy harvesting behaviour is thoroughly discussed. Further, the effect of external resistances and changes in substrate material on the response is analysed and reported. The article aims to explore smart material-based energy harvesting systems, focusing on their behaviour when reinforced with carbon nanotubes. The results of this study may lead to an improved understanding of the design and analysis of CNT-based smart structures.

• 통합자연과학논문집
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• 제3권4호
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• pp.206-209
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• 2010

As the etching time is varied, the change of thickness of the porous silicon layers was successfully investigated. The thickness of the PSi layer as a function of anodization time for a p-type substrate that is etched at a constant current density of 50 $mA/cm^2$ in a 35% hydrofluoric acid solution shows a linear relationship between the etching time and the thickness of the PSi layer.

• 한국재료학회지
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• 제23권8호
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• pp.435-440
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• 2013

Transparent and conducting thin films of Ta-doped $SnO_2$ were fabricated on a glass substrate by a pulse laser deposition(PLD) method. The structural, optical, and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature, and film thickness. XRD results revealed that all the deposited films were polycrystalline and the intensity of the (211) plane of $SnO_2$ decreased with an increase of Ta content. However, the orientation of the films changed from (211) to (110) with an increase in oxygen partial pressure (40 to 100 mTorr) and substrate temperature. The crystallinity of the films also increased with the substrate temperature. The electrical resistivity measurements showed that the resistivity of the films decreased with an increase in Ta doping, which exhibited the lowest resistivity (${\rho}{\sim}1.1{\times}10^{-3}{\Omega}{\cdot}cm$) for 10 wt% Ta-doped $SnO_2$ film, and then increased further. However, the resistivity continuously decreased with the oxygen partial pressure and substrate temperature. The optical bandgap of the 10 wt% Ta-doped $SnO_2$ film increased (3.67 to 3.78 eV) with an increase in film thickness from 100-700 nm, and the figure of merit revealed an increasing trend with the film thickness.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.69-69
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• 2017

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. There effluents are mainly treated by conventional technologies such are aerobic, anaerobic treatment and chemical coagulation. But, there processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These techniques include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that show higher purification results and low toxic sludge. There are many kinds of electrode materials for electrochemical process, among them, boron doped diamond (BDD) attracts attention due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD, among them, researches are focused BDD on Si substrate. But, Si substrate is hard to apply electrode application due to the brittleness and low life time. And other substrates are also not suitable for wastewater treatment electrode due to high cost. To solve these problems, Ti has been candidate as substrate in consideration of cost and properties. But there are critical issues about adhesion that must be overcome to apply Ti as substrate. In this study, to overcome this problem, TiN interlayer is introduced between BDD and Ti substrate. TiN has higher electrical and thermal conductivity, melting point, and similar crystalline structure with diamond. The TiN interlayer was deposited by reactive DC magnetron sputtering (DCMS) with thickness of 50 nm, $1{\mu}m$. The microstructure of BDD films with TiN interlayer were estimated by FE-SEM and XRD. There are no significant differences in surface grain size despite of various interlayer. In wastewater treatment results, the BDD electrode with TiN (50nm) showed the highest electrolysis speed at livestock wastewater treatment experiments. It is thought to be that TiN with thickness of 50 nm successfully suppressed formation of TiC that harmful to adhesion. And TiN with thickness of $1{\mu}m$ cannot suppress TiC formation.

• 한국주조공학회지
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• 제31권2호
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• pp.83-86
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• 2011

Ni-Al based intermetallic compounds of self-propagating high-temperature synthesis (SHS) by the heat of molten aluminum and been coated on the aluminum casting alloy. The effects of the pouring temperature in casting and the thickness of casting substrate on SHS of the coating layer have been investigated. The experimental result showed that the reaction of the coating layer was activated with increasing the pouring temperature in casting and the thickness of casting substrate. However, the aluminum substrate was re-melted by the heat of formation for intermetallic compounds. Then, it was considered that some mechanical or thermal treatments for elemental powder mixtures were required to control the heat of formation for intermetallic compounds in advance.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.6.2-6.2
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• 2011

Block copolymer (BCP) self-assembly in a film geometry has recently been the focus of increased research interest due to their potential use as templates and scaffolds for the fabrication of nanostructured materials. The phase behavior in a thin film geometry that confines polymer chains to the interfaces will be influenced by the interfacial interactions at substrate/polymer and polymer/air and the commensurability between the equilibrium period (L0) of the BCP and the total film thickness. We investigated the phase transitions for the films of block copolymers (BCPs) on the modified surface, like the order-to-disorder transition (ODT) by in-situ grazing incidence small angle x-ray scattering (GISAXS) and transmission electron microscopy (TEM). The selective interactions on the surface by a PS-grafted substrate provide the preferential interactions with the PS component of the block, while a random copolymer (PS-r-PMMA) grafted substrate do the balanced interfacial interactions on the surface. The thickness dependence of order-to-disorder behavior for BCP films will be discussed in terms of the surface interactions.