• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.2 no.2 s.3
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• pp.65-72
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• 2003

In this work a 6-stage hybrid power amplifier which can be used for the wireless communication systems for MMC(hficrowave Micro Cell) and ITS wireless communication system is designed and fabricated. Ihe power amplifier's each stages was fabricated Hetero-junction Power FET of bare chip type and an alumina substrate with $\varepsilon_{r}$=9.9 and 15-mil thickness. The measured results of power amplifier module showed 33.2$\~$36.5 dB small signal gain, 33.0$\~$34.0 dBm output power at forward frequency (17.6 GHa $\~$ 17.9 CHz) and 36.0$\~$37.0 dB small signal gain, 33.0$\~$34.5 dBm output power at reverse frequency (19.0 GHz $\~$19.2GHz).

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.11
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• pp.49-54
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• 2001

In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.112-117
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• 2008

Vertical interconnection scheme using novel silicon-through-via for 3D MEMS devices or stacked package is proposed and fabricated to demonstrate its feasibility. The suggested silicon-through-via replaces electroplated copper, which is used as an interconnecting material in conventional through-via, with doped silicon. Adoption of doped silicon instead of metal eliminates thermal-mismatch-induced stress, which can make troubles in high temperature MEMS processes, such as wafer bonding and LP-CVD(low pressure chemical vapor deposition). Two silicon layers of $30{\mu}m$ thickness are stacked on the substrate. The through-via arrays with spacing $40{\mu}m$ and $50{\mu}m$ are fabricated successfully. Electrical characteristics of the through-via are measured and analyzed. The measured resistance of the silicon-through-via is $169.9\Omega$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.516-521
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• 2011

In this paper, an inverted-triangle patch UWB antenna with an uneven ground planes and an inverted T-slot for 5 GHz WLAN band rejection is presented. The operating bandwidth of the proposed antenna fed with the CPW line is expanded from 3.1 GHz to 10.6 GHz for about -10 dB return loss using three angular parameters correlated to the main patch and the ground plane. The fabricated antenna on Taconic RF-60A substrate with 6.16 relative dielectric constant and 0.64 mm thickness has a main antenna patch size of 36 mm${\times}$19.5 mm. The measured results show return losses of about -10 dB and nearly omni-directional radiation patterns. The proposed UWB antenna has advantages of easily adjustable impedance characteristics by the three angular parameters and easily accomplishable band rejection characteristics by the inverted T-slot.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.11
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• pp.1145-1160
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• 2009

In this paper, a dual band microstrip antenna with soft surface for gapfiller applications is proposed. The proposed antenna with similar radiation pattern and gain is fabricated on RO4003 substrate with a dielectric constant of 3.38 and a thickness of 0.508 mm, and operates in IEEE 802.11a/b bands. The size of the antenna is $50{\times}56.5{\times}5.5\;mm^3$ and the ground plane size including soft surface structure is $175.0{\times}154.4\;mm^2$. The antenna is fed by coaxial cable. The simulated bandwidths of the antenna are 2.388~2.493 GHz and 5.561~6.051 GHz for VSWR<2. The gains are 10.63 dBi and 10.33 dBi, respectively, for the lower and upper bands.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.11
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• pp.1047-1052
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• 2016

In this paper, we propose the CSLR(: Complementary Single Loop Resonators)-loaded inset fed patch antenna with a conducting reflector to improve the radiation patterns. Reflector of the proposed antenna is located below about ${\lambda}_0/4$ from the ground plane of the patch, the size is about two times of the patch. The proposed antenna is designed and fabricated on the substrate which has a dielectric constant and thickness with 2.5 and 0.787 mm, respectively. Simulation results are obtained by using the HFSS, 3D EM Solver based Finite Element Method(: FEM). The resonant frequency and matching characteristics of the antenna with reflector are substantially the same as when there is no change in the antenna without reflector, it is confirmed that radiation patterns are significantly improved by the reflector.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1246-1247
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• 2008

With recent advanced in portable electric devices, wireless sensor, MEMS and bio-Mechanics device, the new typed power supply, not conventional battery but self-powered energy source is needed. Particularly, the system that harvests from their environments are interests for use in self powered devices. For very low powered devices, environmental energy may be enough to use power source. Therefore, in other to made piezoelectric energy harvesting device, PMN-PZT thick film was formed by the screen printing method on the Ag/Pd coated alumina substrate. The layer was 8 layers and slurry where a-terpineol, ethycellulose, ferro B-75001 as Vehicle, PMN-PZT powder used are fabricated by ball mill. The output power quality was be also investigated by changing the load resistance, weight and frequency. The made piezoelectric energy harvesting device was resulted from the conditions of 33$k{\Omega}$, 0.25g, 197Hz respectively. The thick film was prepared at the condition of 2.75Vrms, and its power was 230${\mu} W$ and its thickness was 56${mu}m$. The piezoelectric energy harvesting device output voltage was increased, when the load weight, load resistance was increasing and resonance frequency was diminishing. The other side, resonance frequency was diminished, when the weight was increasing. And output power was continuously it changed by load resistance, output voltage, weight and resonance frequency.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.4
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• pp.475-480
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• 2010

The thermal barrier coating of a gas turbine blade was degraded by isothermal heating in a furnace and by varying the exposure time and temperature. Then, a micro-Vickers hardness test was conducted on the cross section of the bond coat and Ni-based superalloy substrate. Further, the thickness of TGO(Thermally Grown Oxide) was measured by using an image analyzer, and the changes in the microstructure and element contents in the coating were analyzed by using an optical microscope and by performing SEM-EDX analysis. No significant change was observed in the Vickers hardness of the bond coat when the coated specimen was degraded at a high temperature; delamination was observed between the top coat and the bond coat when the coating was degraded for 50 h at a temperature $1,151^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.602-608
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• 2005

We have studied to obtain the SAW filter for the Single Phase Unidirectional Transduce. (SPUDT), was formed on the Langasite substrate and was evaporated by Aluminum-Copper alloy and then we performed computer-simulated by simulator. We can fabricate that the block weighted type IDT as an input transducer of the filter and the withdrawal weighted type IDT as an output transducer of the filter from the results of our computer-simulations. Also, we have performed to obtain the properly conditions about impedance matching of the SAW filter for SPUDT. We have employed that the number of pairs of the input and output IDT are 50 pairs and the thickness and the width of reflector are 5000A and $3.6{\mu}m$, respectively. And the width of IDT' fingers is $2.4{\mu}m$, and the space between IDT' finger and reflector is $2.0{\mu}m$. Frequency response of the fabricated SAW filter has the property that the center frequency is about 190MHz and bandwidth at the 3dB is probably 7.7MHz after when we have matched impedance. Also, we could obtain that ripple characteristics is less than 0.4dB and standing wave ratio is probably 1.5 after when we have matched impedance.