• 센서학회지
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• 제17권3호
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• pp.178-182
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• 2008

Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

• 한국막학회:학술대회논문집
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• 한국막학회 1997년도 추계 총회 및 학술발표회
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• pp.83-84
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• 1997

1. INTRODUCTION : Polyimides containing siloxane moiety(poly(imide siloxane), or polysiloxaneimide) have been synthesized because of their some merits over polyimide itseft. Polyimides have excellent thermal and mechanical properties but their poor solubility and processibility in their fullly imidized form give disadvantages in applications. Incorporation of siloxane units make it possible to increase solubility and processibility, and also impart impact resistance, low moisture uptake, low dielectric constant, thermo-oxidative resistance, good adhesion properties to substrate and etc.. Incorporation methods of siloxane groups into the polyimide was mainly copolymerization or terpolymerization between oligomeric dimethylsiloxane and aromatic dianhydride. A few methods of introducing siloxane units in functional groups of polyimide was reported. In our laboratory poly(amideimide siloxane) and poly(imide siloxane) were prepared and the study about their thermal kinetics was performed. In separation membrane area, polysiloxaneimides was utilized in pervaporation and gas separation. Polyimides in gas separation show high selectivity and very low permeability, and introduction of siloxane segments increase permeability with low decrease in selectivity. We aimed to introduce silicone segments into poly(amic acid) state and synthesize polymer partially imidized, and also show the gas separation characteristics of the synthesized polymer.

• 한국세라믹학회지
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• 제47권1호
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• pp.92-96
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• 2010

Based on the differential electrode equilibria approach, potentiometric YSZ sensors with semiconducting oxide electrodes for CO detection are developed. To improve the selectivity, sensitivity and response-time of the sensor, our strategy includes (a) selection of an oxide with a semiconducting response to CO, (b) addition of other semiconducting materials, (c) addition of a catalyst (Pd), (d) utilization of combined p- and n-type electrodes in one sensor configuration, and (e) optimization of operating temperatures. Excellent sensing performance is obtained by a novel device structure incorporating $La_2CuO_4$ electrodes on one side and $TiO_2$-based electrodes on opposite substrate faces with Pt contacts. The resulting response produces additive effects for the individual $La_2CuO_4$ and $TiO_2$-based electrodes voltages, thereby realizing an even higher CO sensitivity. The device also is highly selective to CO versus NO with minor sensitivity for NO concentration, compared to a notably large CO sensitivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• 한국미생물·생명공학회지
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• 제48권4호
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• pp.480-490
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• 2020

A novel lipase gene, Lip-1420, was isolated from a metagenomic library constructed from reed marsh from Mt. Jumbong in Korea, comprising 112,500 members of recombinant plasmids. The DNA sequence of Lip-1420-subclone (5,513 bp) was found to contain at least 11 ORFs according to the GenBank database. The ORF-3 gene was inserted into the pET21a plasmid containing the C-terminal 6-His tag and transformed into E. coli BL21(DE3) to express the recombinant lipase protein. Lip-1420 was purified using a fast protein liquid chromatography system. The gene was registered in GenBank (MH628529). The values of Km and Vmax were determined as 0.268 mM and 1.821 units, respectively, at 40℃ and pH 8.0, using p-nitrophenyl palmitate as the substrate. This lipase belongs to family IV taxonomically because it has conserved HGGG and GDSAG motifs in the constitutive amino acid sequence. According to the predicted structural model, the binding sites are represented by residues H78, G81, D150, S151, A152, V181, and D236. Finally, Lip-1420 showed triolein selectivity for methanolysis between triolein (18:1) and tristearin (18:0) substrates. Further study of the selective mechanism and structure-function relationship of this new lipase could be useful for more practical applications.

• Bulletin of the Korean Chemical Society
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• 제25권5호
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• pp.687-693
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• 2004

Composite membranes with a titania layer were prepared by soaking-rolling method with the titania sol of nanoparticles formed in the sol-gel process and investigated regarding the vapor permeation of various organic mixtures. The support modification was conducted by pressing $SiO_2$ xerogel of 500 nm in particle size under 10 MPa on the surface of a porous stainless steel (SUS) substrate and designed the multi-layered structure by coating the intermediate layer of ${\gamma}-Al_2O_3$. Microstructure of titania membrane was affected by heat-treatment and synthesis conditions of precursor sol, and titania formed at calcination temperature of 300$^{\circ}C$ with sol of [$H^+$]/[TIP]=0.3 possessed surface area of 210 $m^2$/g, average pore size of 1.25 nm. The titania composite membrane showed high $H_2/N_2$ selectivity and water/ethanol selectivity as 25-30 and 50-100, respectively. As a result of vapor permeation for water-alcohol and alcohol-alcohol mixture, titania composite membrane showed water-permselective and molecular-sieve permeation behavior. However, water/methanol selectivity of the membrane was very low because of chemical affinity of permeants for the membrane by similar physicochemical properties of water and methanol.

• 한국표면공학회지
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• 제45권6호
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• pp.248-256
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• 2012

A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.319-320
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• 2012

Large aperture optical modulator called optical shutter is a key component to realize time-of-flight (TOF) based three dimensional (3D) imaging systems [1-2]. The transmission type electro-absorption modulator (EAM) is a prime candidate for 3D imaging systems due to its advantages such as small size, high modulation performance [3], and ease of forming two dimensional (2D) array over large area [4]. In order to use the EAM for 3D imaging systems, it is crucial to remove GaAs substrate over large area so as to obtain high uniformity modulation performance at 850 nm. In this study, we propose and experimentally demonstrate techniques for backside etching of GaAs substrate over a large area having high uniformity. Various methods such as lapping and polishing, dry etching for anisotropic etching, and wet etching ([20%] C6H8O7 : H2O2 = 5:1) for high selectivity backside etching [5] are employed. A high transmittance of 80% over the large aperture area ($5{\times}5mm^2$) can be obtained with good uniformity through optimized backside etching method. These results reveal that the proposed methods for backside etching can etch the substrate over a large area with high uniformity, and the EAM fabricated by using backside etching method is an excellent candidate as optical shutter for 3D imaging systems.

• 대한전자공학회논문지TE
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• 제39권1호
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• pp.22-30
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• 2002

Si, SiO/sup 2/, TiN, W/sup 2/N 기판 위에 (hfac)Cu(VTMS) 유기금속 전구체로 증착된 구리 핵을 조사하였다. 증착온도가 증가함에 따라, 기판 종류에 상관없이 180。C에서 구리 핵이 클러스터링으로 성장하는 메커니즘을 관찰하였다. 또한, HF용액으로 세척한 TiN 과 SiO/sup 2/가 공존하는 기판에서 구리 핵의 선택성이 향상됨을 관찰하였다. TiN을 H/sup 2/O/sup 2/로 세척한 후 Dimethyldichlorosilane 처리했을 때 표면이 passivation됨을 확인하였다.

• 한국표면공학회지
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• 제42권6호
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• pp.256-259
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• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).