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(Substrate and pretreatment dependence of Cu nucleation by metal-organic chemical vapor deposition)  

Kwak, Sung-Kwan (Dept. of Electronics Engineering, Kyung Hee University)
Lee, Myoung-Jae (Dept. of Electronics Engineering, Kyung Hee University)
Kim, Dong-Sik (Dept. of Computer Engineering, Inha Technical College)
Kang, Chang-Soo (Dept. of Electronic Engineering, Yuhan College)
Chung, Kwan-Soo (Dept. of Electronics Engineering, Kyung Hee University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TE / v.39, no.1, 2002 , pp. 22-30 More about this Journal
Abstract
The nucleation of copper(Cu) with (hfac)iu(VTMS) oganometallic precursor is investigated for Si, $Sio_2$, TiN, $W_2N$ substrates. As the deposition temperature is increased, the dominant growth mechanism is observed to change from the nucleation of Cu particles to the clustering of Cu nuclei around $180^{\ciec}C$, independent of the employed substrates. It is also observed that the cleaning of substrate surfaces with the diluted HF solution improves the selectivity of Cu nucleation between TiN and $Sio_2$ substrates. Dimethyldichlorosilane treatment is found to passivate the surface of TiN substrate, contrary to the generally accepted belief, when the TiN substrate is cleaned by $H_2O_2$ solution before the treatment.
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1 S. Kyoichi, H. Shibata, Conf. Proc. ULSI-IX, MRS, New York, 1994, p. 23
2 J. B. Webb, D. Northcott, I. Emesh, Thin Solid Films, vol. 270 (1995) p. 483
3 S. L. Cohen, M. Liehr, S. Kasi, Appl. Phys. Lett., vol. 60 (1992) p. 50
4 C. W. Lee, Y. T. Kim, J. Y. Lee, Appl. Phys. Lett., vol. 64 (1994) p. 619
5 A. Jain, K. M. Chi, T. T. Kodas, M. J. Hampden-Smith, J. Electrochem. Soc., vol. 140 (1993) p. 1434
6 H. J. Ernst, F. Fabre, and J. Lapujoulade, Phys. Rev., B 46 (1992) p. 1929
7 A. Jain, J. Farkas, T. T. Kodas, K. M. Chi, M. J. Hampden-Smith, Appl. Phys. Lett., vol. 61 (1992) p. 2662, and references therein
8 W. L. Gladfelter, Chem. Mater. vol. 5 (1993) p. 1372
9 A. Sherman, J. Electrochem. Soc., vol. 137 (1990) p. 1892
10 Y. J. Lee, B. S. Suh, C. O. Park, Thin Solid Films, vol. 357 (1999) p. 237
11 N. Awaya and Y. Arita, Thin Solid Films, vol. 262 (1995) p. 12
12 S. P. Murarka, S. W. Hymes, Crit. Rev. Solid State Mat. Sci., vol. 20 (1995) p. 87
13 S. K. Lakshmanan, W. N. Gill, Thin Solid Films, vol. 338 (1997) p. 24
14 S. Kim, D. J. Choi, K. R. Yoon, K. H. Kim, S. K. Koh, Thin Solid Films, vol. 311 (1997) p. 218
15 Y. Igarashi, T. Yamanobe, T. Ito, Thin Solid Films, vol. 262 (1995) p. 124
16 S. Takeda, M. Fukawa, Y. Hayashi, K. Matsumoto, Thin Solid Films, vol. 339 (1999) p. 220
17 T. Ohmi, K. Tsubouchi, Solid State Technol., vol. 35 (1992) p. 47
18 J. C. Chiou, K. C. Juang, M. C. Chen, J. Electrochem. Soc., vol. 142 (1995) p. 177
19 S. K. Koh, S. C. Choi, K. H. Kim, H. J. Jung, G. J. Choi, H. S. Yang, Y. S. Cho, Thin Solid Films, vol. 347 (1999) p. 121
20 G. Boisvert and L. J. Lewis, Phys. Rev., B 56 (1997) p. II 7643