• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.8-15
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• 2021

Micro-LEDs can be applied to various parts of a product. However, it has disadvantages compared to general LEDs in large displays such as low efficiency, intensity, and contrast ratio, among others, owing to their short history of study. The simulations were carried out using ray-tracing software to investigate the change in light intensity and light distribution according to pattern shapes on the sapphire substrate of the flip-chip micro-LED (FC μ-LED) array. Three patterns-concave square patterns, convex square patterns, and Ag coated convex patterns-which existed on the opposite side of FC μ-LEDs (115 ㎛ × 115 ㎛) array, were applied. The intensity of FC μ-LEDs on the center of the receivers depends on the pattern depth with shape. The concave square patterns having FC μ-LEDs arrays show that decreasing intensity as the patterns depth. On the contrary, the convex square patterns having FC μ-LEDs arrays shows that increasing intensity as the patterns depth. In addition, the highest intensity shows that FC μ-LEDs having Ag-coated convex patterns on the opposite side of sapphire lead to a reduction in light crosstalk owing to the Ag film.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.112.1-112.1
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• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.233-236
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• 2006

A 3-D numerical simulation of a buried-channel CCD (Charge Coupled Device) with a deep depletion has been performed to investigate its electrical and physical behaviors. Results are presented for a deep depletion CCD (EEV CCD12; JET-X CCD) fabricated on a high-resistivity $(1.5k\Omega-cm)\;65{\mu}m$ thick epi-layer, on a $550{\mu}m$ thick p+ substrate, which is optimized for X-ray detection. Accurate predictions of the Potential minimum and barrier height of a CCD Pixel as a function of mobile electrons are found to give good charge transfer. The depletion depth approximation as a function of gate and substrate bias voltage provided average errors of less than 6%, compared with the results estimated from X-ray detection efficiency measurements. The result obtained from the transient simulation of signal charge movement is also presented based on 3-Dimensional analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.649-652
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• 1999

The (Ba, Sr)TiO$_3$(BST) thin films were fabricated on Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with substrate temperature by XRD, SEM, EDS and AES depth profils. Increasing the substrate temperature, barium multi titanate phases were decreased. The BST thin film had a structure of perovskite type, and had peaks of (100), (200) at the substrate temperature of 50$0^{\circ}C$. When the BST thin films were deposited at the substrate temperature of 50$0^{\circ}C$, the composition ratio of Ba/sr was 52/48.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.182-182
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• 2010

The behavior of properties of ion exchanged substrate glasses was investigated in this study. In order to study the effects of ion exchange, ion exchange behavior with ion penetration depth, amount of ion exchange, density and thermal expansion was measured according to the time and temperature. The mechanical properties were evaluated by the three point bending test and curvature change, and then fracture patterns were investigated by optical microscope.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.2 no.2
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• pp.39-46
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• 1982

A model of substrate removal by rotating discs has been developed for a better understanding of the process, and the performance of the system has been evaluated under steady and unsteady state. The model was constructed based upon mass transfer of the substrate from the bulk solution to the biofilm and a simultaneous removal of the substrate by the biomass. The model is composed of a few sets of differential equations representing mass balance within the elements of a liquid film and a biofilm, and in the bulk solution. Substrate removal efficiency of the process is largely dependent on a diffusion coefficient of the substrate within the biofilm and a maximum rate of substrate removal of the biomass. The efficiency is affected to a greater extent when the substrate concentration is low and the maximum substrate removal rate is high. The efficiency increases proportionally with increasing film depth when the biofilm is shallow, however, the rate of increase gradually decreases with an increase of the film depth. As the film reaches a limiting depth, the efficiency remains constant. Unlike the steady state, the effluent quality is affected by the tank volume under dynamic state. Increasing tank volume decreases peak concentration of the effluent under peak loading. Additional tank volume provides a buffer capacitya.gainst a peak loading and the holding tank behaves like an equalization tank.

• Journal of Korean Society on Water Environment
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• v.33 no.5
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• pp.587-599
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• 2017

Physical environmental factors (water depth, current velocity and substrate) and fish community were surveyed in the Gapyeong stream, Korea. The fish group of Gapyeong Stream was divided into three types. Lithophilic fish, Koreocobitis rotundicaudata and Pseudopungtungia tenuicorpa preferred shallow depth, low-velocity current, and coarse bed condition, whereas Coreoleuciscus splendidus and Microphysogobio longidorsalis were adapted to high-velocity current and bed materials. Nektonic fish, Zacco koreanus and Zacco platypus appeared in a wide range of physical conditions. Intermediate fish, Hemibarbus longirostris, Pungtungia herzi and Coreoperca herzi adapted to moderate water depths and current velocities. Among them, H. longirostris and C. herzi were adapt to various bed materials. C. splendidus, M. longidorsalis and P. herzi showed high niche overlap for current velocity, water depth and substrate with Z. koreanus and Z. platypus. The occurrence of M. longidorsalis in a relatively low-velocity current compared to Z. koreanus and Z. platypus suggests that the current velocity act as a isolation factor for these species. The competition, isolation and character displacement among these species investigated detail in the future. Based on canonical correspondence analysis, the relative importance of each environmental factor was determined as substrate > water depth > current velocity.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.980-983
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• 2002

In micro-machining, diamond tool is commonly used because it brings much better micro-machinability due to its edge sharpness. However, it is a big question even how thinly the sharp edge of a diamond tool can cut a ship from the workpiece surface. This paper is to investigate the critical cutting depth, at which the dominant cutting mode changes from chip formation to burnishing or vice versa, for a given edge radius. The theoretically critical cutting depth is 0.25$\mu\textrm{m}$(0.8$\mu\textrm{m}$) in cutting using a square type(V-type) diamond tool that has edge radius of 1$\mu\textrm{m}$(1.5$\mu\textrm{m}$). Experimentally, the dominant cutting mode changes and cutting surface becomes better at critical cutting depth. To get high quality surface, depth of cut must be critical cutting depth because less plastically deformed substrate is left on the surface.