• Korean Journal of Materials Research
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• v.30 no.12
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• pp.660-665
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• 2020

Silicon heterojunction solar cells can achieve high conversion efficiency with a simple structure. In this study, we investigate the passivation characteristics of VOx thin films as a hole-selective contact layer using ALD (atomic layer deposition). Passivation characteristics improve with iVoc (implied open-circuit voltage) of 662 mV and minority carrier lifetime of 73.9 µs after post-deposition annealing (PDA) at 100 ℃. The improved values are mainly attributed to a decrease in carbon during the VOx thin film process after PDA. However, once it is annealed at temperatures above 250 ℃ the properties are rapidly degraded. X-ray photoelectron spectroscopy is used to analyze the chemical states of the VOx thin film. As the annealing temperature increases, it shows more formation of SiOx at the interface increases. The ratio of V5+ to V4+, which is the oxidation states of vanadium oxide thin films, are 6:4 for both as-deposition and annealing at 100 ℃, and 5:5 for annealing at 300 ℃. The lower the carbon content of the ALD VOx film and the higher the V5+ ratio, the better the passivation characteristics.

• International Journal of Computer Science & Network Security
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• v.23 no.5
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• pp.121-127
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• 2023

A 500 km/h linear motor high speed terrestrial transportation service is planned to launch 2027 in Japan. In order to support 5G service in the train, the Sub-carrier spacing frequency of 30 kHz is planned to be used instead of common 15 kHz sub-carrier spacing to mitigate Doppler effect in such high-speed transportation. In addition, to increase the cell size of 5G mobile system, plural Base Station antenna will transmit the identical Down Link (DL) signal to form the expanded cell size along the train rail. In this situation, forward and backward antenna signals will be Doppler shifted by reverse direction respectively and the receiver in the train might suffer to estimate accurate Channel Transfer Function (CTF) for its demodulation. In this paper, Delay and Doppler Profiler (DDP) based Channel Estimator is proposed and it is successfully implemented in signal processing simulation system. Then the simulated performances are compared with the conventional Time domain linear interpolated estimator. According to the simulation results, QPSK modulation can be used even under severe channel condition such as 500 km/h, 2 path reverse Doppler Shift condition, although QPSK modulation can be used less than 200 km/h with conventional Channel estimator.

• Journal of Advanced Navigation Technology
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• v.5 no.1
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• pp.37-44
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• 2001

In this paper, the channel environment for next generation ITS/DSRC which is developed for 10Mbps is modeled with ray tracing technique and, we analyzed BER of OFDM which has an advantage over reducing the effect of ISI with multi-carrier and guard time, occuping bandwidth on 6-ray channel environment. Also, we applied the one-tap equalizer to improve the performance of BER. In case only OFDM is applied with 32 sub-carrier, the result of BER is under $10^{-6}$ from 10 to 100m if $E_b/N_0$ is more than 23dB. But in case OFDM and one-tap equalizer are applied with 32 sub-carrier, $E_b/N_0$ is required of about 17dB to achieve BER under $10^{-6}$.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.39 no.6
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• pp.718-726
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• 2002

This paper presents a novel Viterbi decoding architecture for European Digital Video Broadcasting (DVB) receiver. The channel sate information (CSI) of each sub carrier is used to weight the bit-metric of each symbol. The weighted bit-metric is delivered to Viterbi decoder after going through the symbol deinterleaver and bit deinterleaver, such that the CSI can be correctly applied to corresponding bits even after the two interleavings. Simulation shows that the new architecture gives significant performance enhancement of 6~13dB in Rayleigh fading channels depending on the modulation types. This results is also better than previous results by 3.7~10.3dB.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.6-12
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• 1999

It is difficult to realize adaptive main carrier rejection circuit in feedforward-type LPA(Linear Power Amplifier) because the gain and nonlinear characteristics of power amplifier are changed according to operating frequency, voltage, temperature. Usually, pilot tones are used for adaptive LPA operation. but in this paper, the relative phase, which in obtained through I&Q demodulator using input signals as LO signals and main-path & sub-path signals as RF signals, and the magnitude of main-path & sub-path signals are compared, so main carrier rejection is obtained. The proposed method rejects main carriers by 28.34 ~ 34.66dB (@Po=36.2 ~ 28.2 dBm/tone) with two tones at 877MHz, 882MHz and also rejects main carriers by 31.3dB despite changing condition of operating voltage.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.12C
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• pp.1257-1264
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• 2006

The carrier frequency offset causes loss of orthogonality between sub-carriers, thus leads to inter-carrier interference (ICI) in the OFDM symbol. This ICI causes severe degradation of the BER performance of the OFDM receiver. In this paper, we propose a new ICI cancellation algorithm which estimates frequency offset at the time-domain by using CP-ICA method to the received sub-carriers phase rotation. This algorithm is based on a statistical blind estimation method, which mainly utilizes the EVD, rotating phase and the $4^{th}-cumulants$. Since our scheme does not need any training and pilot symbol in estimation, we can expect enhanced bandwidth efficiency in OFDM systems. Simulation results show that the proposed frequency offset estimator is more accurate than the other estimators in $0.0<\varepsilon<1.0$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.6C
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• pp.423-433
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• 2005

We present power(in frequency domain) and rate adaptation(in time domain) schemes in multicarrier (MC) direct-sequence code-division multiple-access(DS/CDMA) communications. Utilizing channel state information from the receiver, the adaptation schemes allocate power the user's sub-band with the largest channel gain. In the time domain, the transmission data rate is adapted for a desired transmission quality. In the case of single-user channels, a closed-form expression is derived for an optimal time domain power adaptation that minimizes the average bit error rate(BER). Channel inversion power adaptation is found to provide nearly optimal performance in this case, as the number of sub-bands or available average transmission power increase. Analysis and simulation results show the BER performance of the proposed power and rate adaptations with fixed average transmission power significantly improves the performance over the power allocation in the frequency domain only. Also, we compare the performance of the proposed power and rate adaptation schemes in MC-DS/CDMA systems with that of power and rate adapted single carrier DS/CDMA systems with RAKE receiver.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.372-377
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• 2018

MgO or gadolinium-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{2-{\delta}}$) was added as a promoter to improve the oxygen transfer kinetics of $MgMnO_3$ oxygen carrier material for chemical looping combustion. Neither MgO nor GDC reacted with $MgMnO_3$, even at the high temperature of $1100^{\circ}C$. The average oxygen transfer capacities of $MgMnO_3$, 5 wt% $MgO-MgMnO_3$, and 5 wt% $GDC-MgMnO_3$ were 8.74, 8.35, and 8.13 wt%, respectively. Although the addition of MgO or GDC decreased the oxygen transfer capacity, no further degradation was observed during their use in 5 redox cycles. The addition of GDC significantly improved the conversion rate for the reduction reaction of $MgMnO_3$ compared to the use of MgO due to an increase in the surface adsorption process of $CH_4$ via oxygen vacancies formed on the surface of GDC. On the other hand, the conversion rates for the oxidation reaction followed the order 5 wt% $GDC-MgMnO_3$ > 5 wt% $MgO-MgMnO_3$ >> $MgMnO_3$ due to morphological change. MgO or GDC particles suppressed the grain growth of the reduced $MgMnO_3$ (i.e., (Mg,Mn)O) and increased the specific surface area, thereby increasing the number of active reaction sites.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.180-186
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• 2023

Positive bias temperature instability (PBTI) degradation of n⁺ and p⁺ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n⁺/nMOSFET will be greater than p⁺/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p⁺/nMOSFET than for the n⁺/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p⁺ poly-Si gate accelerates the degradation of p⁺/nMOSFET. The carrier injection and trapping processes of the n⁺ and p⁺ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.