• Current Photovoltaic Research
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• v.3 no.1
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• pp.16-20
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• 2015

Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of $Cu(In,Ga)Se_2$-based solar cells has been investigated. Wide bandgap $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters $V_{OC}=0.810V$, $J_{SC}=21.7mA/cm^2$, and FF = 69.0%.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.245-251
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• 2016

Galvanizing method has been extensively used to the numerous constructional steels such as a guard rail of high way, various types of structural steel for ship building and various types of steels for the industrial fields etc.. However, the galvanized structures would be inevitably corroded rapidly with increasing exposed time because an acid rain due to environmental contamination has been much dropped more and more. Therefore, it has been made an effort to improve the corrosion resistance of the galvanizing film through various methods. In this study, comparison evaluation on the corrosion resistance of three types of the samples, that is, the hot dip galvanizing with pure zinc(GI), the hot dip galvanizing of alloy bath with zinc and aluminum(GL) and the pure zinc galvanizing steel immersed again to chromate treatment bath(Chro.)were investigated using electrochemical methods in 1% $H_2SO_4$ solution. The Chro. and GI samples exhibited the highest and lowest corrosion resistance respectively in 1% $H_2SO_4$ solution, however, the GI sample revealed the highest impedance at 0.01 Hz due to its high resistance polarization caused by corrosion products deposited on the surface, while Chro. sample exhibited the lowest impedance at 0.01 Hz because of little corrosion products on the surface. Consequently, it is suggested that the chromate treated steel has a better corrosion resistance in acid environment compared to pure galvanizing(GI) or galvalume(GL) steels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.581-586
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• 2007

[ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.

• 보존과학연구
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• s.32
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• pp.37-52
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• 2011

This study investigates the hardening characteristics of the mixture lacquer and glue at room temperature. Diverse samples were made from manufacturing of glue to the adding ratio in sap of the lacquer tree. After the examination of moisture content of samples, it has been seen that there is no relation with glue's kinds or adding ratio, but only with contain level of moisture. The samples made with film shape in order to examine the drying time. Samples with isinglass needed for over three days and had smooth surface. However, samples mixed with animal glue dried within a day and had ripples on the surface because of fast drying rate. In addition, the samples with isinglass had slow change of colour in early step of drying and no colour difference after completely drying although it had significant changes to black oxide as soon as contact with air. In structural analysis with FT-IR showed that the carbonyl bond increased in the samples of mixed with glue, compared to raw lacquer and treated lacquer.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.44 no.4
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• pp.16-24
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• 2012

To characterize the coating structure, diverse methods such as mercury intrusion, nitrogen adsorption and oil absorption methods have been developed and widely employed. These indirect techniques, however, have some limitation to explain the actual coating structure. Recently microscopic observation methods have been tried for analyzing structural characteristics of coating layers. Preparation of the undamaged cross section of a coating layer is essential for obtaining high quality image for analysis. In this study, distortion-free cross-section of the coating layer was prepared using a grinding and polishing technique. The coated paper was embedded in epoxy resin and cured. After curing the resin block it was ground with abrasive papers and then polished with diamond particle suspension and nylon cloth. Polished coating layer was sufficient enough to obtain undamaged cross sectional images with scanning electron microscope under backscattered electron image mode. In addition, the SEM images allowed distinction of the coating layer components. Also S/B latex film formed between pigment particles was visualized by osmium tetroxide staining. Pore size distribution and pore orientation were evaluated by image analysis from SEM cross-sectional images.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.521-528
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• 2008

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-$SiO_x$) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-$SiO_x$ decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between $150^{\circ}\;and\;200^{\circ}$. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-$SiO_x$ thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-$SiO_x$ showed homogeneous alignment; however, in the lower case (x < 1.6), liquid crystals showed homeotropic alignment.

• Polymer(Korea)
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• v.35 no.6
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• pp.543-547
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• 2011

A study has been done to enhance the mechanical properties and processability of electrically conductive polyaniline(PANI) without the polymer's structural alternation. Functionalized acid doped PANI (PANI-DBSA) was prepared by an emulsion polymerization, and dodecylbenzenesulfonic acid (DBSA) played both roles of surfactant and dopant. Also, PANI-DBSA was solution cast blended with high impact polystyrene (HIPS) to produce PANI-DBSA/HIPS blend film. The structure and electrical properties of the conducting polymer blends were observed through UV-vis and FTIR/ATR spectroscopy. A study of the blend was carried by focusing on observation of mechanical and electrical properties based on dispersibility and changes in polymer morphology. The conductivity of the blends was increased by increasing the content of PANI-DBSA, and the sudden increase of conductivity to $3.5{\times}10^{-4}$ S/cm was observed even under a low content of 9 wt%. There was a strong association of continuous network formation with percolation and conductivity in the conducting polymer blends.