• Title/Summary/Keyword: Stress channel current

Search Result 77, Processing Time 0.028 seconds

Electrical Characteristics of Poly-Si TFT`s with Improved Degradation (열화가 억제된 다결정 실리콘 박막 트랜지스터의 전기적 특성)

  • 변문기;이제혁;백희원;김동진;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.11a
    • /
    • pp.457-460
    • /
    • 1999
  • The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.

  • PDF

An automatic rotating annular flume for cohesive sediment erosion experiments: Calibration and preliminary results

  • Steven Figueroa;Minwoo Son
    • Proceedings of the Korea Water Resources Association Conference
    • /
    • 2023.05a
    • /
    • pp.319-319
    • /
    • 2023
  • Flows of water in the environment (e.g. in a river or estuary) generally occur in complex conditions. This complexity can hinder a general understanding of flows and their related sedimentary processes, such as erosion and deposition. To gain insight in simplified, controlled conditions, hydraulic flumes are a popular type of laboratory research equipment. Linear flumes use pumps to recirculation water. This isn't appropriate for the investigation of cohesive sediments as pumps can break fragile cohesive sediment flocs. To overcome this limitation, the rotating annular flume (RAF) was developed. While not having pumps, a side-effect is that unwanted secondary circulations can occur. To counteract this, the top and bottom lid rotate in opposite directions. Furthermore, a larger flume is considered better as it has less curvature and secondary circulation. While only a few RAFs exist, they are important for theoretical research which often underlies numerical models. Many of the first-generation of RAFs have come into disrepair. As new measurement techniques and models become available, there is still a need to research cohesive sediment erosion and deposition in facilities such as a RAF. New RAFs also can have the advantage of being automatic instead of manually operated, thus improving data quality. To further advance our understanding of cohesive sediment erosion and deposition processes, a large, automatic RAF (1.72 m radius, 0.495 m channel depth, 0.275 m channel width) has been constructed at the Hydraulic Laboratory at Chungnam National University (CNU), Korea. The RAF has the ability to simulate both unidirectional (river) and bidirectional (tide) flows with supporting instrumentation for measuring turbulence, bed shear stress, suspended sediment concentraiton, floc size, bed level, and bed density. Here we present the current status and future prospect of the CNU RAF. In the future, calibration of the rotation rate with bed shear stress and experiments with unidirectional and bidirectional flow using cohesive kaolinite are expected. Preliminary results indicate that the CNU RAF is a valuable tool for fundamental cohesive sediment transport research.

  • PDF

Transient Receptor Potential C4/5 Like Channel Is Involved in Stretch-Induced Spontaneous Uterine Contraction of Pregnant Rat

  • Chung, Seungsoo;Kim, Young-Hwan;Joeng, Ji-Hyun;Ahn, Duck-Sun
    • The Korean Journal of Physiology and Pharmacology
    • /
    • v.18 no.6
    • /
    • pp.503-508
    • /
    • 2014
  • Spontaneous myometrial contraction (SMC) in pregnant uterus is greatly related with gestational age and growing in frequency and amplitude toward the end of gestation to initiate labor. But, an accurate mechanism has not been elucidated. In human and rat uterus, all TRPCs except TRPC2 are expressed in pregnant myometrium and among them, TRPC4 are predominant throughout gestation, suggesting a possible role in regulation of SMC. Therefore, we investigated whether the TRP channel may be involved SMC evoked by mechanical stretch in pregnant myometrial strips of rat using isometric tension measurement and patch-clamp technique. In the present results, hypoosmotic cell swelling activated a potent outward rectifying current in G protein-dependent manner in rat pregnant myocyte. The current was significantly potentiated by $1{\mu}M$ lanthanides (a potent TRPC4/5 stimulator) and suppressed by $10{\mu}M$ 2-APB (TRPC4-7 inhibitor). In addition, in isometric tension experiment, SMC which was evoked by passive stretch was greatly potentiated by lanthanide ($1{\mu}M$) and suppressed by 2-APB ($10{\mu}M$), suggesting a possible involvement of TRPC4/5 channel in regulation of SMC in pregnant myometrium. These results provide a possible cellular mechanism for regulation of SMC during pregnancy and provide basic information for developing a new agent for treatment of premature labor.

The Fabrication of Four-Terminal Poly-Si TFTs with Buried Channel (Buried Channel 4단자 Poly-Si TFTs 제작)

  • Jeong, Sang-Hun;Park, Cheol-Min;Yu, Jun-Seok;Choe, Hyeong-Bae;Han, Min-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.48 no.12
    • /
    • pp.761-767
    • /
    • 1999
  • Poly-Si TFTs(polycrystalline silicon thin film transistors) fabricated on a low cost glass substrate have attracted a considerable amount of attention for pixel elements and peripheral driving circuits in AMLCS(active matrix liquid crystal display). In order to apply poly-Si TFTs for high resolution AMLCD, a high operating frequency and reliable circuit performances are desired. A new poly-Si TFT with CLBT(counter doped lateral body terminal) is proposed and fabricated to suppress kink effects and to improve the device stability. And this proposed device with BC(buried channel) is fabricated to increase ON-current and operating frequency. Although the troublesome LDD structure is not used in the proposed device, a low OFF-current is successfully obtained by removing the minority carrier through the CLBT. We have measured the dynamic properties of the poly-Si TFT device and its circuit. The reliability of the TFTs and their circuits after AC stress are also discussed in our paper. Our experimental results show that the BC enables the device to have high mobility and switching frequency (33MHz at $V_{DD}$ = 15 V). The minority carrier elimination of the CLBT suppresses kink effects and makes for superb dynamic reliability of the CMOS circuit. We have analyzed the mechanism in order to see why the ring oscillators do not operate by analyzing AC stressed device characteristics.

  • PDF

Development of Multi-channel Eddy Current System for Inspection of Press Rolls (압연롤 검사를 위한 다중 센서 와전류 탐상 검사 시스템 개발)

  • Lee, Jae-Ho;Park, Tae-Sung;Park, Ik-Keun
    • Journal of the Korean Society of Manufacturing Technology Engineers
    • /
    • v.26 no.3
    • /
    • pp.306-312
    • /
    • 2017
  • Press rolls are constantly exposed to physical and heat stresses on their surface and are prone to crack, bruise, and spall if the accumulated stress goes beyond the critical point. Such surface phenomenon can cause them to lose their functionality and eventually lead to a halted production line. Eddy current testing can be considered a useful method to investigate the surface of the roll. The method involves the application of a high intensity magnetic field onto the surface of the roll, and thereby finding any early stage of possible defects. When the method was applied for roll inspection, the cross section of the sensor was regulated as per the overall testing speed. A smaller cross sectional area implied a better resolution but a longer testing time. In this paper, a convenient method to increase both overall system resolution and inspection speed of eddy current roll inspection is suggested by using a devised array sensor structure.

Behavior of CFS built-up battened columns: Parametric study and design recommendations

  • Vijayanand, S;Anbarasu, M
    • Structural Engineering and Mechanics
    • /
    • v.74 no.3
    • /
    • pp.381-394
    • /
    • 2020
  • The structural performance of cold-formed steel (CFS) built-up battened columns were numerically investigated in this paper. The built-up column sections were formed by connecting two-lipped channels back-to-back, with a regular spacing of battens plates, and have been investigated in the current study. Finite element models were validated with the test results reported by the authors in the companion paper. Using the validated models, the parametric study was extended, covering a wider range of overall slenderness to assess the accuracy of the current design rules in predicting the design strengths of the CFS built-up battened columns. The parameters viz., overall slenderness, different geometries, plate slenderness (b/t ratio) and yield stress were considered for this study. In total, a total of 228 finite element models were analyzed and the results obtained were compared with current design strength predicted by Effective Width Method of AISI Specifications (AISI S100:2016) and European specifications (EN1993-1-3:2006). The parametric study results indicated that the current design rules are limited in predicting the accuracy of the design strengths of CFS built-up battened columns. Therefore, a design equation was proposed for the AISI and EC3 specifications to predict the reliable design strength of the CFS Built-up battened columns and was also verified by the reliability analysis.

A Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement (스트레스 감도 향상을 위한 턴 온 직후의 조름 효과를 이용한 얇은 질화막 폴리실리콘 전계 효과 트랜지스터 압력센서)

  • Jung, Hanyung;Lee, Junghoon
    • Journal of Sensor Science and Technology
    • /
    • v.23 no.2
    • /
    • pp.114-121
    • /
    • 2014
  • We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

Ginsenosides Inhibit N-, p-, arid Q-types but not L-type of $Ca^{2+}$ Channel in Bovine Chromaffin cells

  • Seok Chol;Jung, Se-Yeon;Kim, Hyun-Oh;Kim, Hack-Seang;Hyewhon Rhim;Kim, Seok-Chang;Nah, Seung-Yeol
    • Journal of Ginseng Research
    • /
    • v.24 no.1
    • /
    • pp.18-22
    • /
    • 2000
  • In previous reports we have shown that ginsenosides inhibit high threshold voltage-dependent $Ca^{2+}$ channels in neuronal cells. However, these studies did not show whether ginsenosides-induced inhibition of $Ca^{2+}$ currents discriminates among the various $Ca^{2+}$ channel subtypes, although it is known that there are at least five different $Ca^{2+}$ channel subtypes in neuronal cells. In this study we investigated the effect of ginsenosides on high threshold voltage-dependent $Ca^{2+}$ channel subtypes using their selective $Ca^{2+}$ channel blockers nimodipine (L-type), $\omega$-conotoxin GVIA (N-type), or $\omega$-agatoxin IVA (P-type) in bovine chromaffin cells. We could observe that ginsenosides inhibited high threshold voltage-dependent $Ca^{2+}$ currents in a dose-dependent manner. The $IC_{50}$/ was about 120 $\mu$g/ml. Nimodipine had no effect on ginsenosides response. However, the effect of ginsenosides on $Ca^{2+}$ currents was reduced by $\omega$-conotoxin GVIA, $\omega$-agatoxin IVA, and mixture of nimodipine, $\omega$-contoxin GVIA, and $\omega$-agatoxin IVA. These data suggest that ginsenosides are negatively coupled to three types of calcium channels in bovine chromaffin cell, including an $\omega$-conotoxin GVIA-sensitive (N-type) channel, an $\omega$-agatoxin IVA-sensitive (P-type) channel and nimodipine/$\omega$-conotoxin GVIA/$\omega$-agatoxin IVA-resistant (presumptive Q-type) channel.Q-type) channel.

  • PDF

Assessment on Navigational Stress and Fairway' Width according to Traffic Flow (교통용량에 따른 운항위험도와 항로폭과의 관계에 관한 연구)

  • Seong, Yu-Chang
    • Journal of Navigation and Port Research
    • /
    • v.38 no.3
    • /
    • pp.253-259
    • /
    • 2014
  • Traffic risks in fairway and harbour area increase lately according to be a sharpe change of ship's size and speed. It becomes hot issue to design a fairway, which's width is important to lower traffic risk and ensure navigational safety. The current design making a fairway and width do not focus on maneuvering motion of a large ship, but traffic risks are clear on reflecting the design of fairway, specially on width. To contact with these problems, this research proposes how to determine fairway' width in consideration of traffic volume. it suggests several situations of marine traffic congestion as like narrow channel and harbour area. here uses 162 simulations in MTS Ver.1 developed. Acquired simulation's results, environmental stress dates, figure in a model that relates with required fairway' width and allowable traffic volume. In added, suggested model compares current design with an width.

The Effects of a Thermal Annealing Process in IGZO Thin Film Transistors

  • Kim, Hyeong-Jun;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.289.2-289.2
    • /
    • 2016
  • In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

  • PDF