• Journal of The Korean Association For Science Education
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• v.16 no.3
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• pp.278-285
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• 1996

High school students' achievements in algorithmic problems, and figure-formatted and textual-formatted conceptual problems concerning stoichiometry, gaseous state, and solution, were measured by the Chemistry Problem Solving Ability Test. The relationships among the achievement scores in the three types of problems and cognitive variables such as logical thinking ability, mental capacity, and field dependence/field independence were examined. The portion of variance of explanation for each achievement score was also studied by a multiple regression analysis. The results showed that logical thinking ability was significantly correlated with the achievement score in the algorithmic problems, and accounted for the significant portion of the variance of the score. Mental capacity accounted for the significant portion of the variance of the score in the figure-formatted conceptual problems. Although field dependence/field independence was significantly correlated with all the achievement scores, it did not significantly account for any scores in multiple regression analyses. However, the magnitudes of correlation coefficients among the achievement scores were higher than those between the achievement scores and cognitive variables. The best predictor for each score was also found to be one of the other achievement scores. Educational implications are discussed.

• BMB Reports
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• v.29 no.4
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• pp.300-307
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• 1996

ATP and ADP are potential regulators of mitochondtial respiration and at physiological concentrations they affect the rate of electron transfer between cytochrome c and cytochrome c oxidase. The electron transfer, however, depends on the electrostatic interaction between the two proteins. In order to exclude any nonspecific ionic effects by these polyvalent nucleotides, we used 2'-O-(2,4,6)trinitro(TNP)-derivatives of ATP and ADP which have three orders of magnitude higher affinity for cytochrome c oxidase. A simple titration of the fluorescence intensity of TNP by cytochrome c oxidase showed a binding stoichiometry of 2:1 cytochrome c:cytochrome c oxidase. Higher ionic strength was required for TNP-ATP than for TNP-ADP to be dissociated from cytochrome c oxidase, indicating that the negative charges on the phosphate group are at least partially responsible for the binding. In both spectrophotometric and polarographic assays, addition of ATP (and ADP to a less extent) showed an enhanced cytochrome c oxidase activity. Both electron paramagnetic resonance and fluorescence spectra indicate that there is no Significant change in the cytochrome c-cytochrome c oxidase interaction. Instead, reduction levels of the cytochromes at steadystate suggest that the increased activity of nucleotide-bound cytochrome c oxidase is due to faster electron transfer from cytochrome ${\alpha}$ to cytochrome ${\alpha}_3$, which is known to be the fate limiting step in the oxygen reduction by cytochrome c oxidase.

• Macromolecular Research
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• v.13 no.3
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• pp.212-217
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• 2005

The pyrolysis kinetics of polyurethanes synthesized from polycaprolactone diol (PCL) and diisocyanate (HDI, $H_{12}MDI$) using catalysts such as dibutyltin dilaurate (DBTDL) were studied by a thermogravimetric (TG) technique, which involved heating the sample at the rates of 10, 20 and $30^{\circ}C$/min. The effect of the kind of diisocyanate and the hard segment contents on the activation energy and reaction order were examined at conversions ranging from 1 to $100\%$. The activation energies at first increased slowly with increasing conversion. Also, differential scanning calorimetry (DSC) was used to investigate the structural differences in each polyurethane. DSC can reveal the melting behavior, in terms of the glass transition temperature ($T_g$), which is known to vary as a function of the stoichiometry and processing conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.88-90
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• 2005

Boron Phosphide films were deposited on (111) Si substrate at 650 $^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 m$\ell$/min for $B_2H_6$, 60 m$\ell$/min for $PH_3$ and 1 $\ell$/min for $N_2$. After as grown the films were insitu annealed for 1hour in N$_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at 650$^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.368-375
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• 1995

Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

• Journal of Powder Materials
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• v.18 no.3
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• pp.250-255
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• 2011

The potential application of ultrafine cerium oxide (ceria, $CeO_2$) as an oxygen gas sensor has been investigated. Ceria was synthesized by a thermochemical process: first, a precursor powder was prepared by spray drying cerium-nitrate solution. Heat treatment in air was then performed to evaporate the volatile components in the precursor, thereby forming nanostructured $CeO_2$ having a size of approximately 20 nm and specific surface area of 100 $m^2/g$. After sintering with loosely compacted samples, hydrogen-reduction heat treatment was performed at 773K to increase the degree of non-stoichiometry, x, in $CeO_{2-x}$. In this manner, the electrical conductivity and oxygen-response ability could be enhanced by increasing the number of oxygen vacancies. After the hydrogen reduction at 773K, $CeO_{1.5}$ was obtained with nearly the same initial crystalline size and surface. The response time $t_{90}$ measured at room temperature was extremely short at 4 s as compared to 14 s for normally sintered $CeO_2$. We believe that this hydrogen-reduced ceria can perform capably as a high-performance oxygen sensor with good response abilities even at room temperature.

• Journal of Powder Materials
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• v.24 no.1
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• pp.29-33
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• 2017

Titanium carbide (TiC) powders are successfully synthesized by carburization of titanium hydride ($TiH_2$) powders. The $TiH_2$ powders with size lower than $45{\mu}m$ (-325 Mesh) are optimally produced by the hydrogenation process, and are mixed with graphite powder by ball milling. The mixtures are then heat-treated in an Ar atmosphere at $800-1200^{\circ}C$ for carburization to occur. It has been experimentally and thermodynamically determined that the de-hydrogenation, "$TiH_2=Ti+H_2$", and carburization, "Ti + C = TiC", occur simultaneously over the reaction temperature range. The unreacted graphite content (free carbon) in each product is precisely measured by acid dissolution and by the filtering method, and it is possible to conclude that the maximal carbon stoichiometry of $TiC_{0.94}$ is accomplished at $1200^{\circ}C$.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.224-227
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• 2015

Ferroelectric $Pb_2(Sc,Nb)O_6$ were prepared under two different sintering conditions using the oxide mixing method and the electrical properties were measured. The sintering conditions were $1350^{\circ}C$ for 25 minutes and $1400^{\circ}C$ for 20 minutes. EDX spectroscopy and XRD were used to determine the crystalline characteristic of the $Pb_2(Sc,Nb)O_6$ compositions Pyrochlore phase showed about 2% in all $Pb_2(Sc,Nb)O_6$ specimens. It expands the growth of crystals in samples sintered at $1400^{\circ}C$ than $1350^{\circ}C$, but all samples were the optimal crystallization. The temperature and frequency dependence of the complex dielectric constant and admittance were measured to analyze the electrical properties. The high dielectric constant of the specimens reflects the good stoichiometry and crystallization. The maximum value of the dielectric constant in the two specimens treated with sintering at $1350^{\circ}C$ and $1400^{\circ}C$ were more than 27,000, and the dielectric loss at room temperature is smaller than 0.05. The maximum dielectric constant decreased with increasing frequency, the transition temperature also increased in $Pb_2(Sc,Nb)O_6$ compositions. The admittance and susceptance values reach a peak at all temperatures, and the magnitude of the peak increases with increasing measuring temperature. Strong frequency dependent of maximum admittance, susceptance, dielectric constant and dielectric loss were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.60-60
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• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.