• 분석과학
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• 제5권2호
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• pp.203-211
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• 1992

Ni-36.5at.%Al 합금에서 결정립계에서의 scavenging 원소로 알려진 V를 첨가하여 이 합금의 파괴거동 및 마르텐사이트 미세조직에 미치는 V의 영향에 대해 조사하였다. 시편의 파단면은 주사전자현미경으로 관찰하였고 EDX spectrometer를 사용하여 파단면의 조성을 분석하였으며 투과전자현미경으로 마르텐사이트 내부조직의 변화에 대해 조사하였다. V의 첨가로 입계파괴에서 입내파괴로 파괴 모드의 변화를 나타내었으며 EDX spectrometer로 분석한 결과 입내에 비해 입계에 Al의 함량이 상대적으로 증가되는 양상을 보여 주었다. Ni-36.5at.%Al 합금의 경우 마르텐사이트 플레이트는 내부쌍정으로 이루어져 있으나 V의 첨가에 따라 twinned 마르텐사이트 조직은 사라지며 stacking fault와 고밀도의 전위를 가진 modulated 조직이 점차 지배적으로 형성되는 것이 관찰되었다. Stacking fault를 분석한 결과 Al과 V의 치환에 따른 extrinsic fault였으며 high-energy 상태인 이 stacking fault가 있는 부위에 유해 원소인 S가 편석됨으로써 결정립계에서의 파괴를 줄일 수 있었다.

• 한국세라믹학회지
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• 제35권6호
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• pp.535-542
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• 1998

SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

• Applied Microscopy
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• 제42권3호
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• pp.151-157
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• 2012

The microstructure of various shapes of stacking fault pyramids (SFPs) formed in multiple implant/anneal Separation by Implanted Oxygen (SIMOX) material were investigated by plan-view and cross-sectional transmission electron microscopy. In the multiple implant/anneal SIMOX, the defects in the top silicon layer are confined at the interface of the buried oxide layer at a density of ${\sim}10^6\;cm^{-2}$. The dominant defects are perfect and imperfect SFPs. The perfect SFPs were formed by the expansion and interaction of four dissociated dislocations on the {111} pyramidal planes. The imperfect SFPs show various shapes of SFPs, including I-, L-, and Y-shapes. The shape of imperfect SFPs may depend on the number of dissociated dislocations bounded to the top of the pyramid and the interaction of Shockley partial dislocations at each edge of {111} pyramidal planes.

• 한국산업융합학회 논문집
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• 제7권4호
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• pp.349-354
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• 2004

The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

• 열처리공학회지
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• 제10권2호
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• pp.93-100
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• 1997

Effect of austenite grain size on starting temperature of ${\gamma}{\rightarrow}{\varepsilon}$ martensitic transformation($M_s$) has been studied in an Fe-18%Mn alloy. Particular attention was paid on the variation of stacking fault energy with austenite grain size, which is considered to be a important factor affecting ${\gamma}{\rightarrow}{\varepsilon}$ martensitic transformation. Austenite grain size was increased in a wide range from $13{\mu}m$ to $185{\mu}m$ with increasing solution treatment temperature from $700^{\circ}C$ to $1100^{\circ}C$. Hardness was decreased with increasing austenite grain size while the volume fraction of ${\varepsilon}$ martensite showed a reverse tendency, which indicates that the hardness is more dependent on austenite grain size than ${\varepsilon}$ martensite content. No significant change was found in $M_s$ temperature when the grain size was larger than about $30{\mu}m$. In case that, the austenite grain size was smaller than about $30{\mu}m$, however, $M_s$ temperature was marlkedly decreased with decreasing austenite grain size. A linear relationship between $M_s$ temperature and the stacking fault formation probability, i.e. the reciprocal of the stacking fault energy was obtained, which suggests that the variation of $M_s$ temperature with austenite grain size is closely related to the change in stacking fault energy.

• 한국재료학회지
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• 제29권3호
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• pp.189-195
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• 2019

The effect of C, Mn, and Al additions on the tensile and Charpy impact properties of austenitic high-manganese steels for cryogenic applications is investigated in terms of the deformation mechanism dependent on stacking fault energy and austenite stability. The addition of the alloying elements usually increases the stacking fault energy, which is calculated using a modified thermodynamic model. Although the yield strength of austenitic high-manganese steels is increased by the addition of the alloying elements, the tensile strength is significantly affected by the deformation mechanism associated with stacking fault energy because of grain size refinement caused by deformation twinning and mobile dislocations generated during deformation-induced martensite transformation. None of the austenitic high-manganese steels exhibit clear ductile-brittle transition behavior, but their absorbed energy gradually decreases with lowering test temperature, regardless of the alloying elements. However, the combined addition of Mn and Al to the austenitic high-manganese steels suppresses the decrease in absorbed energy with a decreasing temperature by enhancing austenite stability.

• 한국산학기술학회논문지
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• 제22권3호
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• pp.13-19
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• 2021

n형 SiC 반도체에서 적층 결함이 열전 물성에 미치는 영향에 대해 연구하였다. ��-SiC 분말 성형체를 질소 분위기에서 1600~2100 ℃, 20~120분간 열처리해서 30~42 %의 기공률을 갖는 다공질 SiC 반도체를 제작하였다. X선 회절 분석으로 적층 결함량, 격자 스트레인 및 격자 상수를 산출하였고, 미세 구조 분석을 위해서 기공률 및 비표면적 측정과 함께, 주사 전자현미경 (SEM), 투과 전자현미경 (TEM) 및 고분해능 전자현미경 (HREM) 등을 관찰하였다. Ar 분위기 550~900 ℃에서 도전율과 Seebeck 계수를 측정 및 산출하였다. 열처리 온도가 높을수록, 처리 시간이 길어질수록 캐리어 농도 증가 및 입자와 입자간의 연결성 향상에 의해 도전율이 향상되었다. 도너로 작용하는 질소의 고용으로 Seebeck 계수는 음(-)의 값을 나타내었고, 도전율과 마찬가지로 열처리 온도 및 시간이 상승함에 따라 Seebeck 계수의 절대 값이 증가하였다. 이는 적층 결함의 감소, 즉 입자 및 결정 성장과 함께 적층 결함 밀도의 감소에 의해 포논의 평균 자유 행정이 증가해서 결과적으로 포논-드랙 효과에 의한 Seebeck 계수의 향상으로 나타난 것으로 판단된다.

• 비파괴검사학회지
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• 제28권6호
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• pp.477-482
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• 2008

The influence of dislocation substructure of metallic materials on ultrasonic velocity has been experimentally investigated. The test materials of pure Cu, brass (Cu-35Zn), 2.25Cr-1Mo steel, and AISI 316 with different stacking fault energy (SFE) are plastically deformed in order to generate dislocation substructures. The longitudinal wave velocit $(C_L)$ decreases as a function of tensile strain in each material. The $C_L$ of Cu-35Zn and AISI 316 decreases monotonously with tensile strain, but $C_L$ of Cu and 2.25Cr-1Mo steel shows plateau phenomena due to the stable dislocation substructure. The variation of ultrasonic velocity with the extent of dislocation damping and dislocation substructures is discussed.

• 한국분말재료학회지
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• 제10권5호
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• pp.318-324
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• 2003

The nano-scale crystallite sizes of uranium oxide powders in simulated spent fuel were measured by the neutron diffraction line broadening method in order to analyze the sintering behavior of the dry process fuel. The mixed $UO_2$ and fission product powders were dry-milled in an attritor for 30, 60, and 120 min. The diffraction patterns of the powders were obtained by using the high resolution powder diffractometer in the HANARO research reactor. Diffraction line broadening due to crystallite size was measured using various techniques such as the Stokes' deconvolution, profile fitting methods using Cauchy function, Gaussian function, and Voigt function, and the Warren-Averbach method. The non-uniform strain, stacking fault and twin probability were measured using the information from the diffraction pattern. The realistic crystallite size could be obtained after separation of the contribution from the non-uniform strain, stacking fault and twin.

• 전기학회논문지
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• 제64권4호
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• pp.592-597
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• 2015

3D-IC is a novel semiconductor packaging technique stacking dies to improve the performance as well as the overall size. TSV is ideal for 3D-IC because it is convenient for stacking and excellent in electrical characteristics. However, due to high-density and micro-size of TSVs, they should be tested with a non-invasive manner. Thus, we introduce a TSV test method on test prober without a direct contact in this paper. A capacitive coupling effect between a probe tip and TSV is used to discriminate small TSV faults like voids and pin-holes. Through EM simulation, we can verify the size of eye-patterns with various frequencies is good for TSV test tools and non-contact test will be promising.