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http://dx.doi.org/10.5762/KAIS.2021.22.3.13

The Effect of Stacking Fault on Thermoelectric Property for n-type SiC Semiconductor  

Pai, Chul-Hoon (Division of Bio-Engineering, Incheon National University)
Publication Information
Journal of the Korea Academia-Industrial cooperation Society / v.22, no.3, 2021 , pp. 13-19 More about this Journal
Abstract
This study examined the effects of stacking faults on the thermoelectric properties for n-type SiC semiconductors. Porous SiC semiconductors with 30~42 % porosity were fabricated by the heat treatment of pressed ��-SiC powder compacts at 1600~2100 ℃ for 20~120 min in an N2 atmosphere. XRD was performed to examine the stacking faults, lattice strain, and precise lattice parameters of the specimens. The porosity and surface area were analyzed, and SEM, TEM, and HRTEM were carried out to examine the microstructure. The electrical conductivity and the Seebeck coefficient were measured at 550~900 ℃ in an Ar atmosphere. The electrical conductivity increased with increasing heat treatment temperature and time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The Seebeck coefficients were negative due to nitrogen behaving as a donor, and their absolute values also increased with increasing heat treatment temperature and time. This might be due to a decrease in stacking fault density, i.e., a decrease in stacking fault density accompanied by grain growth and crystallite growth must have increased the phonon mean free path, enhancing the phonon-drag effect, leading to a larger Seebeck coefficient.
Keywords
${\beta}$-SiC; Electrical conductivity; Grain growth; N-incorporation; Seebeck coefficient; Stacking fault;
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