• Transactions of the Society of Information Storage Systems
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• v.3 no.1
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• pp.17-22
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• 2007

[ $TiO_2$ ] nanoparticles are added into UV curable resin to increase the refractive index of the cover-layer which is laminated on the media for cover-layer incident NFR. High refractive index is required for the cover-layer operating for the solid immersion lens optics with high effective numerical aperture. The eyepattern could be achieved from the cover-layer coated 20 GB ROM disc in which the refractive index of the cover-layer was 1.75, but the gap servo was unstable due to the rough surface of the cover-layer. Even though the light loss due to the nanoparticles is not serious, the rough microstructure is developed by adding the nanoparticles in the organic binder material. To achieve smooth surface for the stable gap servo, some special techniques should be added, for example the solubility of the nanoparticles should be enhanced by the optimization of the surface of the nanoparticles.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.81-114
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• 1999

The strain, surface and inerfacial energies of III-V ternary systems were calculated for three kinds of structure modes: the Frank-van der Merwe (FM) mode, the Stranski-Krastanov (SK) mode an the Volmer-Wever (VW) mode. The free energy for each mode was estimated as functions of the thickness and composition or lattice misfit. Through comparison of the free energy of each mode, it was found that the thickness-composition phase diagrams of III-V ternary systems can be determined only by considering the balance of the free energy and three kinds of structure modes appear in the phase diagrams. The SK mode appears only when the lattice misfit is large and/or the lattice layer is thick. The most stable structure of the SK mode is a cluster with four lattice layers or minimum thickness on a wetting layer of increasing lattice layers. The VW mode appears when the lattice misfit is large and the lattice layer is thin and only in the InPSb/InP and GaPSb/GaP systems which have the largest lattice misfit of III-V ternary systems. The stable region of the SK mode in the GaPSb/GaP and InPSb/InP phase diagrams is largest of all because the composition dependence of the strain energy of these systems is stronger than that of the other systems. The critical number of lattice layers below which tow-dimensional (2D) layers precede the three-dimensional (3D) nucleation in the SK mode at x=1.0 depnds on the lattice misfit.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.4 no.3
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• pp.127-137
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• 2000

This study presents an analysis of the characteristics of vertical ozone distribution near the surface using ozonesonde data(l995 to 1998), plus surface ozone and meteorological data from the Pohang region. These features were examined in detail using three case studies. The first related to episodes of high surface ozone concentrations during the Spring season when the frontogenesis between the high and low pressure associated with the upper-level jet stream was found to be located near the surface. The second was a 5-day winter period(l3 -17 December, 1997) in the Pohang province when the hourly concentrations exceeded 90 ppb on several occasions owing to low-level jets(LLJs) induced by a nocturnal stable layer. Accordingly, this explains why the high surface ozone concentrations occurred at night as the ozone was transported across the zone by a strong wind speed( over 12.5 ms .1). The third case study was ozone enhancement due to photochemical reactions. In this case, the maximum concentration of ozone exceeded 60 ppb in the summer(23 -28 August, 1997). When an ozone peak appeared within the boundary layer, the occurrence frequency of a low-level jet due to the nocturnal stable layer was about 77%, similarly the occurrence frequency of a near-surface ozone peak relative to the appearance of an LLJ was about 76%. Accordingly, there is clearly a close correlation between the occurrence of LLJs and near-surface ozone peaks.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.9 no.2
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• pp.17-27
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• 2005

The problem of the onset stability in an inclined layer of dielectric viscoelastic fluid (Walter's liquid B') is studied. The analysis is made under the simultaneous action of a normal a.c. electric field and the natural convection flow due to uniformly distributed internal heat sources. The power series method used to obtain the eigen value equation which is then solved numerically to obtain the stable and unstable solutions. Numerical results are given and illustrated graphically.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.79-83
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• 2008

We have investigated the effect of the formation of an initial oxide layer on the fabrication of the porous aluminium oxide. The porous aluminium oxide was fabricated by two-step anodization process with a electropolished aluminium foil. Before the first anodization step, the initial oxide layer with thickness of 10 nm was formed under the applied voltage of 1 V and later the anodization was continued under 40 V using oxalic acid solution. With the formation of the initial oxide layer, the anodization process was stable and the anodization current was constant throughout the process. In case of the absence of the initial oxide layer, the anodization was very unstable and the continuous increase in the anodization current was observed. This indicates the formation of the initial oxide layer on the aluminium surface prevents the burning of the surface due to the nonuniform distribution of the applied electric field, and allows the stable anodization process required for the porous aluminium oxide.

• Journal of the Korean Applied Science and Technology
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• v.17 no.2
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• pp.120-125
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• 2000

The tfTZ(4,4',4''-trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• KSBB Journal
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• v.19 no.3
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• pp.221-225
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• 2004

Bacillus polyfermenticus SCD derived from Bacillus sp., which is commonly called as Bisroot$^{ⓡ}$. The goal of this study, is to Increase stability of Bacillus polyfermenticus SCD in low pH, high temperature and high glucose concentration via three layer coating. The viability of coated Bacillus polyfermenticus SCD increased to 30%, 20%, 14% in the condition of pH 2 4 6 than that of uncoated Bacillus polyfermenticus SCD at 37$^{\circ}C$ for 4 h. Final viability of the coated Bacillus polyfermenticus SCD in 80$^{\circ}C$ increased to 40% than that of uncoated Bacillus polyfermenticus SCD. In high glucose concentration coated Bacillus polyfermenticus SCD is more stable than uncoated about 50%. In conclusion, the three layer coated Bacillus polyfermenticus SCD is very stable for low pH, high temperature and high glucose concentration.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.591-596
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• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.