• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.11
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• pp.617-624
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• 1999

The spiral type thin-film inductor performed in high frequency at 2-5[MHz] range is analyzed by 2-dimensional Finite Element Method(2D FEM). The features of micro thin-film inductor have complicated electromagnetic phenomenon such as skin effect, proximity effect and magnetic saturation. To develope miniatured magnetic device considering these features, it is important to predict the property of the thin film inductor according to design parameter. In this paper, we present the 2D FEM analysis for the spiral type thin film inductor. The characteristics of inductor from point of view of inductance, resistance and quality factor are studied according to design parameter and various pattern construction.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.461-464
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• 1999

Planar type thin film inductors have a potential for the application of miniaturized DC-DC converters. For those high current applications, the magnetic film with high current capability is required. The current capability of magnetic films is mainly determined from high saturation magnetization (4$\piM_s$) as well as large anisotropy field $(H_k)$. We fabricated a double rectangular spiral thin film inductor which consist of magnetic layer, coil and insulator. Highest inductance values as well as best frequency characteristics can be obtained from 5 MHz and quality factor exhibit about 7.

• Proceedings of the KIEE Conference
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• 2001.04a
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• pp.129-131
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• 2001

This paper represents the method is to design thin film spiral type inductor using the analytic method and to evaluate the characteristics of the high frequency inductors using HFSS simulation program. The magnetic circuit of the thin film inductor can be successfully simulated by the HFSS.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.333-338
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• 1999

Thin film inductors of $10 mm \times 10 mm$ with inner coil type of 14 turns were fabricated by sputtering, photo-masking, and etching processes. Their characteristics of impedances and annealing after were investigated. The properties of impedances of the thin film magnetic core inductors with inner coil type were improved by magnetic field annealing due to the removal of residual stress and the improvement magnetic properties of magnetic films. But the characteristics of frequency of the thin film magnetic core inductors were not improved by magnetic field annealing due to properties of the spiral pattern and inner coil type. The thin film magnetic core inductor annealed by uniaxal field annealing method showed an inductance of 1000 nH and resistance of$ 6 \Omega$ of 1 at 2 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.890-893
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• 2004

In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4126-4130
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• 2012

In this paper, we proposed planar spiral inductors based on AC coupling for high-frequency wireless signal transmission. Design and characteristics of various structures of the inductor were analyzed. Capacitance between the inductors can be reduced by positioning two thin-film inductors in parallel. So two structures were proposed. First structure is inter-diagonal structure. This structure was made not to overlap the wire part of the paralleled two inductors. Second structure is On-chip type structure that the two thin-film inductors were in parallel but located on diagonal line not to face each other. The resonance in this structure was reduced from twice to once by increasing horizontal distance between the two thin-film inductors, because the capacitance effect between the two thin-film inductors decreases when the distance between the two inductors increases.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.239-244
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• 2001

Recently, RF inductor having researched by many workers, we fabricated and investigated properties of RF inductors. In order to improve the Q-factor (Quality), we try to apply the patterned Fe$_{78.81}$Ta$_{8.47}$N$_{12.71}$ soft magnetic thin film of 5000 which shows magnetic anisotropy of 30 Oe. Thus, patterned magnetic film was artificially increased magnetic anisotropy lead to increasing of ferro-magnetic resonance frequency up to GHz band. Coil as part of inductor was fabricated by lift off process. The dimension of RF inductor was designed 47un, rectangular shape, and measured properties. In the case of Ti/Ag air core type inductor shows Q of 9, inductance of 8.4 nH at 2 GHz. Magnetic film employed inductor shows inductance of 9 nH and FMR resonance frequency was 700 MHz.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.52-57
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• 2004

In this research, characteristics of air core rectangular spiral type inductors of ㎓ band are numerical analyzed. The basic structure of inductors is a rectangular spiral having 390${\mu}{\textrm}{m}$${\times}$390${\mu}{\textrm}{m}$ size, 5.5 turns, line width of 10 ${\mu}{\textrm}{m}$ and line space of 10 ${\mu}{\textrm}{m}$. Frequency characteristics were simulated up to 10 ㎓. The substrate was modeled as Si, Sapphire, glass and GaAs and the conductor as Cu. The thickness of the conductor was fixed at 2. The number of turns was n.5 to make the input and output terminals to be on the opposite sides. The initial inductance of the basic inductor structure was 13.0 nH, maximum inductance 60.0 nH and resonance frequency 4.25 ㎓. As the dielectric constant of the substrate was increased, the initial inductance varied only slightly, but the resonance frequency decreased considerably. As the number of turns was varied from 1.5 to 9.5, the initial inductance was increased linearly from 2.9 nH to 15.9 nH and, then, saturated at 16.9 nH. The Q factor increased only slightly. The line width and line space of inductors were varied from 5 ${\mu}{\textrm}{m}$ to 20 ${\mu}{\textrm}{m}$, which resulted in the decrease of the initial and maximum inductances. But the resonance frequency was increased. Q factor displayed an increase and a decrease, respectively, when the line width and line space were increased.