• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.377-380
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• 2001

The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.192-195
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• 2000

Antimony doped tin oxyde thin films have been deposited by sol-gel method using non-alkoxide precursor SnCl$_2$$.$2H$_2$O as host and SbC1$_3$ as dopant material. Using spin coating method, thin films of thickness up to 200nm have been uniformly deposited on Corning 1737F non-alkali glass substrates. Effect of Sb doping concentration and heat treatment on electrical and optical properties was investigated. Heat treatment was performed at the temperature from 350$^{\circ}C$ to 650$^{\circ}C$ in flowing O$_2$. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition and firing condition.

• Journal of Magnetics
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• 제10권2호
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.6-11
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• 2016

For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.

• 한국자기공명학회논문지
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• 제24권1호
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• pp.9-15
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• 2020

Nitrogen vacancy center (NV center) in diamond has recently been appeared as a promising candidate for hyperpolarization applications due to its optical pumping property by laser. Optically Detected Magnetic Resonance (ODMR) has been used as a conventional method to obtain the resonance spectrum of NV centers. ODMR, however, has a shortcoming of sensitivity and a limitation of subjects, such that the degree of hyperpolarization can hardly be estimated, and that the spins other than NV centers are invisible. In contrast, Electron Spin Resonance (ESR) spectroscopy is known to proportionally reflect the degree of spin polarization. In this work, we successfully observed the optically-induced hyperpolarization of NV spins in diamond through CW-ESR spectroscopy with an X-band system. All the NV peaks were identified by calculating the eigenvalues of NV spin Hamiltonian. The intensities of NV peaks were enhanced over 240 times after optical pumping. The enhanced peaks corresponding to the transition from |m_s=0> to |m_s=-1> revealed inverted phases, while other peaks remained in-phase. The optically-induced hyperpolarization on NV spins can be a useful polarization source, leading to ¹³C nuclear hyperpolarization in diamond.

• Journal of Mechanical Science and Technology
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• 제17권10호
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• pp.1552-1562
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• 2003

In this paper, we propose a new PIV methodology for obtaining a velocity field from a sequence of multiple image data based on a least-square principle (also known as MQD; minimum quadratic difference) for the grey level difference between two neighboring frames of image data. We investigated both the accuracy of the result and the time consumption in the computation. It turns out that the proposed method is not only accurate but fast compared with the conventional correlation PIV techniques. Our method is applied to the spin-up flows and the results show that the method can be a good substitution for the conventional algorithms employed in the existing commercial codes.

• ETRI Journal
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• 제29권6호
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• pp.814-816
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• 2007

Conventional lithography methods of gold patterning are based on deposition and lift-off or deposition and etching. In this letter, we demonstrate a novel method of gold patterning using spin-coatable gold electron-beam resist which is functionalized gold nanocrystals with amine ligands. Amine-stabilized gold electron beam resist exhibits good sensitivity, 3.0 mC/$cm^2$, compared to that of thiol-stabilized gold electron beam resists. The proposed method reduces the number of processing steps and provides greater freedom in the patterning of complex nanostructures.

• Bulletin of the Korean Chemical Society
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• 제32권11호
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• pp.4005-4010
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• 2011

We investigated thermal behavior of spin-coated films of P(HB-co-HHx)/PEG blends by using infraredreflection absorption (IRRAS) spectroscopy and 2D correlation spectroscopy. Based on 2D IRRAS correlation spectra, we could determine the sequence of spectral intensity changes with increasing temperature that PEG band changes first and then a band for crystalline component of P(HB-co-HHx) changes before a band for amorphous component. The intensities of bands for PEG and amorphous P(HB-co-HHx) were changed greatly as PEG weigh % of P(HB-co-HHx)/PEG blends increased. Transition temperatures of P(HB-co-HHx)/PEG blends were successfully determined by 2D gradient mapping method. The transition temperature of spincoated films of 98/2 and 90/10 P(HB-co-HHx)/PEG blends and 80/20 P(HB-co-HHx)/PEG blend determined by 2D gradient map are, respectively, about 137.5 and $132.5^{\circ}C$. Furthermore, P(HB-co-HHx)/PEG blends show an additional transition temperature that have been interpreted in terms of different lamellar thicknesses in spin coated films.

• Bulletin of the Korean Chemical Society
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• 제24권6호
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• pp.703-711
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• 2003

We have theoretically studied the nonadiabatic transitions among the five lower states with the Ω=$1_u$ symmetry ($1_u^{(1)} to 1_u^{(5)}$) in the photodissociation of Cl₂, Br₂, and I₂by using the spin-orbit configuration interaction (SOCI) method and the semiclassical time-dependent coupled Schrodinger equations. From the configuration analyses of the SOCI wavefunctions, we found that the nonadiabatic transition between $1_u^{(2)}$ and $1_u^{(1)}$ is a noncrossing type, while that between $1_u^{(3)}$ and $1_u^{(4)}$ is a crossing type for all the molecules. The behavior of the radial derivative coupling element between $1_u^{(1)}$ and $1_u^{(2)}$ and that between $1_u^{(3)}$ and $1_u^{(4)}$ is analyzed in detail. In Cl₂, nonadiabatic transitions can take place even between the states correlating to different dissociation limits, while in Br₂ and I₂, with the usual photon energies e.g. less than 20 eV, nonadiabatic transitions occur only between the states correlating to the same dissociation limits, reflecting the different magnitudes of the spin-orbit interactions.

• 한국재료학회지
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• 제25권4호
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.