A Study on Surface of BST Thin Films by Sol-Gel Methods

졸겔법으로 제작된 BST 박막의 구조적 특성

  • 홍경진 (광주대학교 컴퓨터전자통신공학부) ;
  • 민용기 (광주대학교 컴퓨터전자통신공학부) ;
  • 조재철 (초당대학교 전자공학과)
  • Published : 2001.07.01

Abstract

The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

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