• Title/Summary/Keyword: Spin on-Glass

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Technologies for Small Form Factor Optical Disks (초소형 디스크 요소기술)

  • Kim Jin-Hong;Kim Jong-Hwan
    • 정보저장시스템학회:학술대회논문집
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    • 2005.10a
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    • pp.113-118
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    • 2005
  • Small form factor optical disks for near-field optics using solid immersion lens were developed. Disk durability properties in terms of head-disk interface (HDI) properties were investigated by drag test, diamond like carbon film and lubricant film were coated on the small form factor disk to enhance HDI. Disks with glass substrates and lubricant films after heat treatment showed more durable characteristics. Coverlayers made of UV resin were uniformly coated by spin coating In which the ski-jump could not be formed by adopting outer ring technique.

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Technologies for Small Form Factor Optical Disks (초소형 디스크 요소기술)

  • Kim, Jin-Hong
    • Transactions of the Society of Information Storage Systems
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    • v.2 no.1
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    • pp.26-31
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    • 2006
  • Small form factor optical disks for near-field optics using solid immersion lens were developed. Diamond like carbon film and lubricant film were coated on the small form factor optical disk to enhance the head-disk interface(HDI) characteristics. The disk durability properties in terms of HDI phenomena were investigated by drag test. Disks with glass substrates and the lubricant films experienced heat treatment showed more durable characteristics. Coverlayers made of UV resin were uniformly coated by spin coating in which the ski-jump could be removed by adopting outer ring technique

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Fabrication and characterization of silicon field emitter array with double gate dielectric (이중 게이트 절연막을 가지는 실리콘 전계방출 어레이 제작 및 특성)

  • 이진호;강성원;송윤호;박종문;조경의;이상윤;유형준
    • Journal of the Korean Vacuum Society
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    • v.6 no.2
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    • pp.103-108
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    • 1997
  • Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

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Fabrication and Characteristics of a Highly Sensitive GMR-SV Biosensor for Detecting of Micron Magnetic Beads (미크론 자성비드 검출용 바이오센서에 대한 고감도 GMR-SV 소자의 제작과 특성 연구)

  • Choi, Jong-Gu;Lee, Sang-Suk;Park, Young-Seok
    • Journal of the Korean Magnetics Society
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    • v.22 no.5
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    • pp.173-177
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    • 2012
  • The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

Surface Control of Planarization Layer on Embossed Glass for Light Extraction in OLEDs

  • Cho, Doo-Hee;Shin, Jin-Wook;Moon, Jaehyun;Park, Seung Koo;Joo, Chul Woong;Cho, Nam Sung;Huh, Jin Woo;Han, Jun-Han;Lee, Jonghee;Chu, Hye Yong;Lee, Jeong-Ik
    • ETRI Journal
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    • v.36 no.5
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    • pp.847-855
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    • 2014
  • We developed a highly refractive index planarization layer showing a very smooth surface for organic light-emitting diode (OLED) light extraction, and we successfully prepared a highly efficient white OLED device with an embossed nano-structure and highly refractive index planarization layers. White OLEDs act as an internal out-coupling layer. We used a spin-coating method and two types of $TiO_2$ solutions for a planarization of the embossed nano-structure on a glass substrate. The first $TiO_2$ solution was $TiO_2$ sol, which consists of $TiO_2$ colloidal particles in an acidic aqueous solution and several organic additives. The second solution was an organic and inorganic hybrid solution of $TiO_2$. The surface roughness ($R_a$) and refractive index of the $TiO_2$ planarization films on a flat glass were 0.4 nm and 2.0 at 550 nm, respectively. The J-V characteristics of the OLED including the embossed nano-structure and the $TiO_2$ planarization film were almost the same as those of an OLED with a flat glass, and the luminous efficacy of the aforementioned OLED was enhanced by 34% compared to that of an OLED with a flat glass.

Magnetoresistance of Single-type and Dual-type GMR-SV Multilayer Thin Films with Top and Bottom IrMn Layer (상부와 하부 IrMn층을 갖는 단일구조 및 이중구조 거대자기저항-스핀밸브 다층박막의 자기적 특성 비교 분석)

  • Choi, Jong-Gu;Kim, Su-Hee;Choi, Sang-Heon;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.27 no.4
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    • pp.115-122
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    • 2017
  • The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

Post-annealing Effect of Giant Magnetoresistance-Spin Valve Device for Sensor (센서용 거대자기저항 스핀밸브소자의 열처리 효과)

  • Lee, Sang-Suk;Park, Sang-Hyun;Soh, Kwang-Sup;Joo, Ho-Wan;Kim, Gi-Wang;Hwang, D.G.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.172-177
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    • 2007
  • In order to detect of the magnetic property in the cell unit, we studied the GMR-SV (giant magnetoresistance-spin valves) biosensor, which was depended on the micro patterned features according to two easy directions of longitudinal and transversal axes. Here, the multi layer structure was glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe. The uniaxial anisotropy direction was applied to the patterned biosensor during the deposition and vacuum post-annealing at $200^{\circ}C$ under the magnitude of 300 Oe, respectively. Considering the magnetic shape anisotropy effect, the size of micro patterned biosensor was a $2{\times}5{\mu}m^2$ after the photo lithography process. By our experimental results, we confirmed that the best condition of GMR-SV biosensor should be the same direction of the axis sensing current and the easy axis of pinned NiO/NiFe/CoFe triple layer oriented to the width direction of device, and the direction of the easy axis of free CoFe/NiFe bilayer was according to the longitudinal direction of device.

Optical and mechanical properties of silicate film using a water glass (물유리를 이용한 실리카계 박막의 광학적 및 기계적 특성)

  • Lee, K.M.;Lim, Y.M.;Hwang, K.S.
    • Journal of Korean Ophthalmic Optics Society
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    • v.5 no.2
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    • pp.187-192
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    • 2000
  • We prepared $SiO_2-Na_2O-R_mO_n$ thin films based on economics of water glass and investigated optical, mechanical properties of product thin films. Coating sol stabilized with 1 N HCl and 1 N $NH_4OH$, was fabricated by using water glass and calcium nitrate, and aluminum nitrate as starting materials. As-coated films on stainless steel, Si wafer and soda-lime-silica glass by spinning were finally annealed at 500, 750 and $900^{\circ}C$. Micro hardness and nitrogen content in film surface of annealed films were measured by Knoop hardness tester and EDX, respectively. Field Emission Scanning Electron Microscope (FE-SEM) and UV-VIS spectroscopy were adopted to analyze surface morphology and thickness and reflectance of our films.

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Low Temperature Annealing Effect of PFO-Poss Emission Layer on the Properties of Polymer Light Emitting Diodes

  • Gong, Su-Cheol;Chang, Ho-Jung
    • Korean Journal of Materials Research
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    • v.19 no.6
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    • pp.313-318
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    • 2009
  • Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

Characteristics of c-axis oriented sol-gel derived ZnO films (C-축으로 정렬된 sol-gel ZnO 박막의 특성)

  • 김상수;장기완;김인성;송호준;박일우;이건환;권식철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.2
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    • pp.49-55
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    • 2001
  • ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.

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