• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.190-193
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• 2010

Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.

• 시스템엔지니어링워크숍
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• s.1
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• pp.60-64
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• 2003

In this study, we have analyzed the cost of korea high-speed railway system. The predicted cost in planning phase and adjustment data to 5th year are collected. Then, predicted cost is compared with adjustment in year/item/system base. We make a project history table for criteria to review project history and research & development activity. We have developed CBS(cost breakdown structure) and allocated adjustment data to them. It is shown that cost prediction related to research & development activity in planning phase is relatively correct.

• Proceedings of the KSR Conference
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• 2002.10a
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• pp.376-381
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• 2002

In this study, we have analyzed the cost of korea high-speed rail project. The predicted cost in planning phase and adjustment data to 5th year are collected. Then, predicted cost is compared with adjustment in year/item/system base. We make a project history table for criteria to review project history and research ＆ development activity. We have developed CBS(cost breakdown structure) and allocated adjustment data to them. It is shown that cost prediction related to research St development activity in planning phase is relatively correct.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.1
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• pp.66-77
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• 2010

Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.35-43
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• 2002

In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.221-224
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• 2013

Effects of ambient temperature on the ac electrical treeing and breakdown behaviors in an epoxy/layered silicate (1 wt%) were carried out in needle-plate electrode geometry. A layered silicate was exfoliated in an epoxy base resin,, using our ac electric field apparatus. To measure the treeing initiation and propagation, and the breakdown rate, constant alternating current (ac) of 10 kV (60 Hz) was applied to the specimen in a needle-plate electrode arrangement, at $30^{\circ}C$, $90^{\circ}C$ or $130^{\circ}C$ of insulating oil bath. At $30^{\circ}C$, the treeing initiation time and the breakdown time in the epoxy/layered silicate (1 wt%) system were 1.4 times higher than those of the neat epoxy resin. At $90^{\circ}C$ (lower than Tg), electrical treeing was initiated in 55 min, and propagated until 1,390 min at the speed of $0.35{\times}10^{-3}mm/min$, which was 4.4 times higher than that at $30^{\circ}C$; however, there was almost no further treeing propagation after 1,390 min. At $130^{\circ}C$ (higher than Tg), electrical treeing was initiated in 44 min, and propagated until 2,000 min at the speed of $0.96{\times}10^{-3}mm/min$. Typical branch type electrical treeing was obtained from the neat epoxy and epoxy/layered silicate at $30^{\circ}C$, while bush type treeing was observed out from the needle tip at $90^{\circ}C$ and $130^{\circ}C$.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.470-474
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• 2001

IGBT inverters have switching rise times of 0.2-2 $\mu$ sec, and have been believed to cause insulation stresses and premature motor failures. Inverter driven induction motors with high speed switching and advanced PWM techniques are widely used for variable speed applications. Recently, the insulation failures of stator winding have attracted many concerns due to high dv/dt of IGBT PWM inverter output. In this paper, the detailed insulation test results of 19 low-voltage induction motors are presented. Different types of insulation techniques are applied to 19 motors. The insulation characteristics are analyzed with partial discharge, discharge inception voltage, and dissipation factor tests. Also, breakdown tests by high voltage pulses are performed, and the corresponding breakdown voltages are obtained.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.4
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• pp.912-919
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• 1994

The engine combustion is one of the most important processes affecting performance and emissions. One effective way to improve the engine combustion is to control the motion of the charge inside a cylinder by means of optimum induction system design, because the flame speed is mainly determined by the turbulence at compression(TDC) process in S.I. engine. It is believed that the tumble and swirl motion generated during intake stroke breaks down into small-scale turbulence in the compression stroke of the cycle. However, the exact nature of this relationship is not well known. This paper describes the tumble flow measurements inside the cylinder of a 4-valve S.I. engine using laser Doppler velocimetry(LDV) under motoring(non-firing) conditions. This is conducted on an optically assesed single cylinder research engine under motored conditions at an engine speed of 1000rpm. Three different cylinder head intake port configurations are studied to develop a better understanding the tumble flow generation, development, and breakdown mechanisms.