Browse > Article
http://dx.doi.org/10.5207/JIEIE.2002.16.1.035

The Characteristics of Surface Flashover on the Semiconductor in High Electric-Field  

이세훈 (대원과학대학 전기과)
이충식 (대원과학대학 전기과)
Publication Information
Journal of the Korean Institute of Illuminating and Electrical Installation Engineers / v.16, no.1, 2002 , pp. 35-43 More about this Journal
Abstract
In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.
Keywords
Photo-Conductive Power Switch(PCPS); surface flashover; surface breakdown Phenomena;
Citations & Related Records
연도 인용수 순위
  • Reference
1 R. J. Feuerstein, B. Senitzky, J. Appl. Phys. 70(1), 1 July 1991.
2 G. Mourou and W. Knox, Appl. Phys. Lett. 35, pp. 492, 1979.   DOI
3 G. M. Loubriel, M. W. O'Mally, and F.J.Zutavern, "Toward Pulsed Power Uses for Photoconductive Semiconductor Switches：Closing Switches," in Digest of Technical Papers, 6th IEEE Pulsed Power Conference, P. H. Turchi and B. H. Bemstein eds.(IEEE, New York, 1987), pp.145-148, 1987.
4 P. F. Williams and F. E. Peterkin, “A mechanism for Surface Flashover of Semiconductors”, Proceedings of the 7th IEEE Pulsed Power Conference, Monterey, CA, pp.890-896, 1989.
5 K. H. S. Dchoenbach, B. K. Lakdawala, K. B. J. Schmitt, and T. J. Powers, in Proceedings of SPIE, Los Angeles, CA(SPIE, Bellingham, WA, 1988), Vol. 871, 1988
6 W. R. Runyan, K. E. Bean, Addison-Wesley Publishing Company Semiconductor Integrated Circuit Processing Technology, 1990.
7 B. L. Thomas and W. C. Nunnally, “Investigation of Surface Flashover in Silicon Photoconductive Power Switched”, Processings of the 6th IEEE Pulsed Power Conference Arlington, VA, pp.149-52, 1987.
8 B. L. Thomas and W. C. Nunnally, "Recent Developments in the Investigation of Surface Flashover on Silicon Photoconductive Power Switches", Proceedings of the 7th IEEE Pulsed Power Conference, Monterey, CA, pp. 890-896, 1989.   DOI
9 G. M. Loubriel, M. W. O'Mally, and F.J.Zutavern, "Toward Pulsed Power Uses for Photoconductive Semiconductor Switches：Closing Switches," in Digest of Technical Papers, 6th IEEE Pulsed Power Conference, P. H. Turchi and B. H. Bemstein eds.(IEEE, New York, 1987), pp. 145-148, 1987.
10 S. K. Ghandhi, VLSI Fabrication Principles, New York, John Wiley & Sons, Inc., 1983.