• 대한금속재료학회지
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• 제48권11호
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• pp.1028-1034
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• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1005-1008
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• 2009

In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

• 한국음향학회지
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• 제34권4호
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• pp.264-273
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• 2015

본 논문에서는 의료용 초음파 트랜스듀서의 방사 빔 형상의 개선에 관하여 연구하였다. 빔 형상의 개선을 위하여 분할전극과 다초점 렌즈를 포함하는 새로운 트랜스듀서 구조를 고안하였다. 먼저 선형 음원에 대해 유한요소 해석을 통해 빔 형상을 분석한 후, 부엽의 크기, 집속구간 및 빔폭 등의 성능들을 동시에 고려하여 고안된 구조의 최적설계를 수행하였다. 이때 집속구간과 최소 빔폭의 비율을 성능지수로 사용하여 고안된 구조의 최적치수를 도출하였다. 그 결과 부엽의 크기가 -20.2 dB로 작고, 최소 빔폭이 2.04 mm이고 깊이 30 mm부터 160 mm까지 좁고 일정한 빔폭을 가지도록 빔 형상이 개선되었다. 나아가, 고안된 구조를 가지도록 트랜스듀서 시편을 제작하고 빔 패턴을 측정하여 해석 결과와 비교함으로써, 고안된 트랜스듀서 구조의 타당성을 검증하였다.

• 한국재료학회지
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• 제31권3호
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• pp.162-171
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• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• Journal of Animal Science and Technology
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• 제50권4호
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• pp.561-572
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• 2008

다양한 조건하에서 가축분뇨처리공정을 운전하면서 각 자동제어 인자의 반응을 분석하고 ORP, DO, pH(mV)-time profile를 이용한 자동제어 신뢰성을 평가하였다. 또한 무산소 조건에서의 잔존 유기물 및 미생물 자기산화에 의한 탈질율을 고려한 적정 외부탄소원 공급량 지표를 파악하였다. 실험은 45L의 유효용적을 지닌 실험실 규모의 SBR 공정을 이용하여 수행되었다. ORP-와 pH(mV)-, DO-time profile 상에서 완전질산화를 의미하는 NBP가 뚜렷하게 발현하던 중 NH4-N의 낮은 부하와 고농도 NOx-N 함유 폐수의 유입 및 불충분한 무산소 조건 제공이 이루어졌을 때 ORP-와 DO-time profile 상에서 NBP가 사라지기 시작하였으며 NOx-N의 지속적인 증가에 의해 ORP 값의 민감성이 둔화되기 시작하였다. 그러나 pH(mV)-time profile은 항상 일정한 변화패턴을 유지하면서 암모니아성 질소의 완전 질산화가 이루어졌을 때 뚜렷한 NBP를 발현하였다. NOx-N/NH4-N의 비가 80:1 수준까지 높아지는 조건하에서도 pH(mV)- time profile상에서의 이러한 안정적 NBP의 발현은 지속되었으며 발현되는 NBP는 MSC(Moving Slope Change)의 변화 패턴을 추적함에 의해 인식되도록 프로그램 할 수 있었다. pH(mV)-time profile에서의 NBP의 발현과 MSC를 이용한 자동제어시점 인식은 반응조내 NOx-N 농도가 무려 300mg/L 이상의 수준에서도 안정적이었다. 유기물 농도에 따른 자동제어 인자의 반응을 분석한 시험에서도 반응조내 유기물의 농도가 STOC 기준 약 10,000mg/L 수준으로 증가함에도 불구하고 pH(mV)-time profile 상에서의 이러한 NBP 발현은 지속되었으며 고농도 유기물 축적 하에서도 동일한 자동제어 알고리즘이 이용될 수 있음을 알 수 있었다. 잔존 유기물과 미생물 자기산화에 의한 탈질율은 약 0.4mg/L.hr로 분석되었으며 안전지수 0.1을 도입하여 산출된 NOx-N 기준 적정 외부탄소원 공급량은 0.83 STOC/NOx-N으로 파악되었다.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.32-38
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• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• Asian Journal of Atmospheric Environment
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• 제2권2호
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• pp.90-101
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• 2008

The chemical compositions of $PM_{2.5}$ and $PM_{10}$ and associated high-molecular-weight polycyclic aromatic hydrocarbons (PAHs) were investigated during winter and summer at a roadside and an urban background site in Saitama, Japan. The average concentrations of $PM_{2.5}$ exceeded the United States Environmental Protection Agency standards during both periods. Carbonaceous components were abundant in both the observed and calculated (by means of a mass closure model) chemical composition of $PM_{2.5}$. Traffic-related pollutants (elemental carbon and high-molecular-weight PAHs) were strongly associated with $PM_{2.5}$ rather than with larger particles. The mass concentrations of $PM_{2.5}$, as well as those of EC and PAHs associated with the particles, at the two sites were strongly correlated. Comparison of our data with source profile ratios indicates that diesel-powered vehicles were probably the main source of the measured PAHs. The PAHs concentrations were affected by meteorological conditions during our study. Our results highlight the need for the establishment of standards for $PM_{2.5}$ in Japan.

• Asian Pacific Journal of Cancer Prevention
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• 제13권2호
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• pp.693-698
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• 2012

Breast cancer is the most frequent cancer of women worldwide, with considerable geographic and racial/ethnic variation. Data are generally derived from population based cancer registries in the developed countries but hospital data are the most reliable source in the developing countries. Ten years data from 1st Jan 2000 to 31st Dec 2009 of a cancer hospital in Pakistan were here analyzed by descriptive statistics to evaluate the clinicopathologic profile of local breast cancer patients. Among 28,740 cancer patients, 6,718 were registered as breast cancer. The female to male ratio was 100:2. Breast cancer accounted for 23% of all and 41% of female cancers. Some 46% were residents of Lahore, with a mean age of $47{\pm}12$ years. Less than 1% were at Stage 0 and 10%, 32%, 35% and 23% were at Stage I, II, III and IV respectively. Histopathology was unknown in 4% while 91%, 2% and 1% had invasive ductal carcinoma (IDC), invasive lobular carcinoma (ILC) and mucinous carcinoma respectively. Rare carcinomas accounted for the rest. Tumor grade 1, 2 and 3 was 11%, 55% and 34% among the known. Profile of breast cancer patients in Pakistan follows a pattern similar to that of other developing countries with earlier peak age and advanced disease stage at presentation. The male breast cancer accounts for higher proportion in the local population. Local women have higher frequency of IDC and lower frequency of ILC and DCIS, owing probably to a different risk profile. Use of hospital information systems and establishment of population based cancer registry is required to have accurate and detailed local data. Promotion of breast health awareness and better health care system is required to decrease the burden of advanced disease.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권3호
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• pp.136-147
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• 2009

In this paper we analyze the influence of source/drain (S/D) extension region design for minimizing short channel effects (SCEs) in 25 nm gate length single and double gate Silicon-on-Insulator (SOI) and Germanium-on-Insulator (GOI) MOSFETs. A design methodology, by evaluatingm the ratio of the effective channel length to the natural length for the different devices (single or double gate FETs) and technology (SOI or GOI), is proposed to minimize short channel effects (SCEs). The optimization of non-overlapped gate-source/drain i.e. underlap channel architecture is extremely useful to limit the degradation in SCEs caused by the high permittivity channel materials like Germanium as compared to that exhibited in Silicon based devices. Subthreshold slope and Drain Induced Barrier Lowering results show that steeper S/D gradients along with wider spacer regions are needed to suppress SCEs in GOI single/double gate devices as compared to Silicon based MOSFETs. A design criterion is developed to evaluate the minimum spacer width associated with underlap channel design to limit SCEs in SOI/GOI MOSFETs.