• Journal of Korea Multimedia Society
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• v.5 no.1
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• pp.68-76
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• 2002

Multicast in mobile host has the problem of hast mobility, multicast decision, triangle routing, tunnel convergence, implosion of retransmission, and bandwidth waste. In particular, the bandwidth waste in radio is a definite factor that decreases transmission rate. To solve the problems, this paper proposes a new multicast transmission protocol called FIM(Forward Error Correction Integrated Multicast), which supports reliable packet recovery mechanism by integrating If Mobility Support for the host mobility, IGMP(Interned Group Management Protocol) for the group management, and DVMRP(Distance Vector Multicast Routing Protocol) for the multicast routing, and it also uses FEC and the local recovery method based on receiver. The performance measurement is performed by dividing the losses into the homogeneous independent loss, the heterogeneous independent loss, and the shared source link loss model.. The result shows that the performances improves in proportion to the size of local areal group when the size of transmission group exceeds designated size. This indicates FIM is effective in the environment where there are much of data and many receivers in the mobile host.

• Journal of English Language & Literature
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• v.57 no.1
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• pp.171-190
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• 2011

Shakespeare's plays deploy an interesting array of food signs in a way to illuminate the historical process of what Stephen Mennell has described as "the civilizing of appetite"-a process in which the changes of food choices and eating habits took place in response to the changes in people's way of life and personality structure over the long-term modern period since the middle ages. Shakespeare's plays suggest that the civilizing of appetite in early modern England was heavily affected by the forces of social mobility as well as the nascent market economy. The Capulets' costly preparation of Juliet's wedding banquet is a showcase of conspicuous consumption which was a structural necessity for the ruling class in Shakespeare's time. Some fifteen years later, the same kinds of foodstuffs are included in a shepherd's shopping list for the sheepshearing festival in Winter's Tale. This is a significant coincidence to prove that food was an important source of emulation and contest among different social classes; and that the rich diet of the upper class gave impetus to social mobility. The Elizabethan subjects, especially among the elite noblemen, were interpellated by the ideology of food that equated the quality of food and the eater's social identity. Faced with bankruptcy as a consequence of his extravagant consumption habit, Bassanio in The Merchant of Venice testifies to the gripping ideology of food onto early modern people, while Poor Tom in King Lear presents a comic parody of the rich people's conspicuous waste. Also in Coriolanus and The Merry Wives of Winsor, Shakespeare uses food as a metaphor for class-motivated social struggles.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.1-11
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• 2004

A FinFET, a novel double-gate device structure is capable of scaling well into the nanoelectronics regime. High-performance CMOS FinFETs , fully depleted silicon-on-insulator (FDSOI) devices have been demonstrated down to 15 nm gate length and are relatively simple to fabricate, which can be scaled to gate length below 10 nm. In this paper, some of the key elements of these technologies are described including sub-lithographic pattering technology, raised source/drain for low series resistance, gate work-function engineering for threshold voltage adjustment as well as metal gate technology, channel roughness on carrier mobility, crystal orientation effect, reliability issues, process variation effects, and device scaling limit.

• Biomolecules & Therapeutics
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• v.8 no.2
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• pp.179-183
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• 2000

To determine biosafety of fluorosilicic acid as a source of fluoride, we carried out acute toxicity and general pharmacological studies using mouse. Fluorosilicic acid had little effects on general behavior, pain response, convulsion, skeletal muscle function and intestinal mobility as compared to controls. It had either little adverse effects on alkaline phosphatase and collagen levels in osteoblast cells. This study supports the safety of fluorosilicic acid in animals.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.543-545
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• 2009

With injection-type source delivery system of atomic layer deposition (ALD), bottom-contact and bottom-gate thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric for the first time. The properties of the ZnO TFT were greatly influenced by the device structure and the process conditions. The zinc oxide TFTs exhibited a channel mobility of 0.43 $cm^2$/Vs, a threshold voltage of 0.85 V, a subthreshold slope of 3.30 V/dec, and an on-to-off current ratio of above $10^6$ with solid saturation.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.875-877
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• 2007

Zinc tin oxide (ZTO) sol-gel solution was synthesized for ink-jet printable semiconducting ink. Bottom-contact type TFT was produced by printing the ZTO layer between the source and drain electrodes. The transistor involving the ink-jet printed ZTO had the $mobility\;{\sim}\;0.01\;cm^2V^{-1}s^{-1}$. We demonstrated the direct-writing of semiconducting oxide for solution processed TFT fabrication.

• Journal of Korea Multimedia Society
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• v.19 no.11
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• pp.1871-1877
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• 2016

In this paper, a Wireless USB (WUSB) protocol is adopted for development of ASMD (Adaptive Source Multi Device) N-screen wireless services. WUSB is the USB technology merged with WiMedia PHY and Distributed-MAC (D-MAC). However, the current WUSB protocol can't provide seamless N-screen streaming services to moving WUSB devices in home network environment. Therefore, to provide the ASMD N-screen services through WUSB based on D-MAC protocol, a channel management scheme is proposed to support seamless mobility between adjacent ASMD groups for wireless IPTV N-screen services. In simulation results, proposed ASMD channel management (ACM) scheme is compared with conventional WUSB channel management scheme in view points of throughput, average path interference and energy consumption according to various numbers of nodes and elapsed simulation times. Through simulation results, it is explained that proposed ASMD channel management (ACM) scheme should be adopted in the WUSB protocol to realize ASMD N-screen wireless services.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1789-1791
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• 2007

We fabricated OTFT-OLED display panel by using Ag-paste for source and drains electrode of OTFTs. The OTFTs were fabricated by solution processes such as spin-coating for PVP gate dielectric and screen printing for S/D electrodes with Ag-paste, except pentacene active layer which was deposited by evaporation. The mobility was 0.024 cm2/V.sec , off state current ${\sim}10-11A$, threshold voltage 7.6 V and on/off current ratio ${\sim}105$. The panel consisted of 16 x 16 pixels and each pixel consisted of 2 OTFTs, 1 Capacitor and 1 OLED. The pixels successfully worked in terms of current magnitude supplied to OLED and the control ability of driving and switching OTFTs.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1706-1711
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• 1989

Unit processes for the fabrication of HEMT(high electron mobility transistor)was studied and the optimum conditions of them were applied to the fabrifcation of a discrete HEMT device. The HEMT with a nominal gate-source spacing of 3.6\ulcorner and a gate length of 2.8\ulcorner showed a transconductance of 46.1mS/mm and a threshold voltage of -0.29V. A source-drain voltage of 2.0V for a saturation current of 35mA/mm was achieved.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.48-53
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• 1998

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.