• 제목/요약/키워드: Source depletion

검색결과 162건 처리시간 0.025초

A spent nuclear fuel source term calculation code BESNA with a new modified predictor-corrector scheme

  • Duy Long Ta ;Ser Gi Hong ;Dae Sik Yook
    • Nuclear Engineering and Technology
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    • 제54권12호
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    • pp.4722-4730
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    • 2022
  • This paper introduces a new point depletion-based source term calculation code named BESNA (Bateman Equation Solver for Nuclear Applications), which is aimed to estimate nuclide inventories and source terms from spent nuclear fuels. The BESNA code employs a new modified CE/CM (Constant Extrapolation - Constant Midpoint) predictor-corrector scheme in depletion calculations for improving computational efficiency. In this modified CE/CM scheme, the decay components leading to the large norm of the depletion matrix are excluded in the corrector, and hence the corrector calculation involves only the reaction components, which can be efficiently solved with the Talyor Expansion Method (TEM). The numerical test shows that the new scheme substantially reduces computing time without loss of accuracy in comparison with the conventional scheme using CRAM (Chebyshev Rational Approximation Method), especially when the substep calculations are applied. The depletion calculation and source term estimation capability of BESNA are verified and validated through several problems, where results from BESNA are compared with those calculated by other codes as well as measured data. The analysis results show the computational efficiency of the new modified scheme and the reliability of BESNA in both isotopic predictions and source term estimations.

Trimethyl-indium 소스 고갈에 따른 InGaAsP 에피층의 특성 변화 (Effect of trimethyl-indium source depletion on InGaAsP epilayer grown by MOCVD)

  • 김현수;오대곤;편광의;최인훈
    • 한국진공학회지
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    • 제9권4호
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    • pp.400-405
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    • 2000
  • 유기금속 소스의 농도를 연속적으로 in-situ 측정이 가능한 EPISON ultrasonic monitor를 이용하여 TMIn(trimethly-indium)의 소스 고갈이 InGaAs, InGaAsP bulk 에피층과 1.55 $mu extrm{m}$ InGaAs/InGaAsP SMQW (strained multi-quantum well)에 미치는 영향을 조사하였다. TMIn 소스는 사용량이 80%에서 급격하게 소스 고갈 현상을 보였다. TMIn 소스는 사용량이 80%에서 급격하게 소스 고갈 현상을 보였다. TMIn 소스 고갈에 의한 에피층의 특성 변화를 조사한 결과, bulk 에피층의 경우에는 소스가 고갈 되기 전에 성장한 에피층과 비교하여 DCXRD(double crystal X-ray diffractometry) spectrum에서 피크 분리가 약 300 arcsec정도 Ga-rich 방향으로 이동하였으며 relative FWHM은 약 2배 가량 증가하는 것을 보였다. SMQW 구조에서는 bulk 에피층과는 달리, PL 중심파장에서도 약 40 nm 정도 단파장쪽으로 이동하였으며, 피크 분리는 약 300 arcsec정도 Ga-rich 방향으로 이동하였다. 하지만, EPISON의 closed loop 기능을 사용할 경우에는 TMIn 소스 사용량이 95%에서도 피크 분리가 $\pm$100 arcsec이내의 재현성 있는 에피층 성장이 가능하다는 것을 알 수 있었다.

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Numerical studies on the important fission products for estimating the source term during a severe accident

  • Lee, Yoonhee;Cho, Yong Jin;Lim, Kukhee
    • Nuclear Engineering and Technology
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    • 제54권7호
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    • pp.2690-2701
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    • 2022
  • In this paper, we select important fission products for the estimation of the source term during a severe accident of a PWR. The selection is based on the numerical results obtained from depletion calculations for the typical PWR fuel via the in-house code named DEGETION (Depletion, Generation, and Transmutation of Isotopes on Nuclear Application), release fractions of the fission products derived from NUREG-1465, and effective dose conversion coefficients from ICRP 119. Then, for the selected fission products, we obtain the adjoint solutions of the Bateman equations for radioactive decay in order to determine the importance of precursors producing the aforementioned fission products via radioactive decay, which would provide insights into the assumption used in MACCS 2 for a level 3 PSA analysis in which up to six precursors are considered in the calculations of radioactive decays for the fission product after release from the reactor.

Dynamic Gene Expression Profiling of Escherichia coli in Carbon Source Transition from Glucose to Acetate

  • Oh Min-Kyu;Cha Mee-Jeong;Lee Sun-Gu;Rohlin Lars;Liao James C.
    • Journal of Microbiology and Biotechnology
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    • 제16권4호
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    • pp.543-549
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    • 2006
  • DNA microarray was used to study the transcription profiling of Escherichia coli adapting to acetate as a sole carbon source. Bacteria grown in glucose minimal media were used as a reference. The dynamic expression levels of 3,497 genes were monitored at seven time points during this adaptation. Among the central metabolic genes, the glycolytic and glucose phosphotransferase genes were repressed as the bacteria entered stationary phase, whereas the glyoxylate pathway, TCA cycle, and gluconeogenic genes were induced. Distinct induction or repression patterns were recognized among different pathway genes. For example, the repression of glycolytic genes and the induction of gluconeogenic ones started immediately after glucose was depleted. On the other hand, the regulation of the pentose phosphate pathway genes and glyoxylate genes gradually responded to the glucose depletion or was more related to growth in acetate. When the whole genome was considered, many of the CRP, FadR, and Cra regulons were immediately responsive to the glucose depletion, whereas the $\sigma^s$, Lrp, and IHF regulons were gradually responsive to the glucose depletion. The expression profiling also provided differential regulations between isoenzymes; for example, malic enzymes A (sfcA) and B (maeB). The expression profiles of three genes were confirmed with RT-PCR.

Novel Two-Level Randomized Sector-based Routing to Maintain Source Location Privacy in WSN for IoT

  • Jainulabudeen, A.;Surputheen, M. Mohamed
    • International Journal of Computer Science & Network Security
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    • 제22권3호
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    • pp.285-291
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    • 2022
  • WSN is the major component for information transfer in IoT environments. Source Location Privacy (SLP) has attracted attention in WSN environments. Effective SLP can avoid adversaries to backtrack and capture source nodes. This work presents a Two-Level Randomized Sector-based Routing (TLRSR) model to ensure SLP in wireless environments. Sector creation is the initial process, where the nodes in the network are grouped into defined sectors. The first level routing process identifies sector-based route to the destination node, which is performed by Ant Colony Optimization (ACO). The second level performs route extraction, which identifies the actual nodes for transmission. The route extraction is randomized and is performed using Simulated Annealing. This process is distributed between the nodes, hence ensures even charge depletion across the network. Randomized node selection process ensures SLP and also avoids depletion of certain specific nodes, resulting in increased network lifetime. Experiments and comparisons indicate faster route detection and optimal paths by the TLRSR model.

저압화학기상증착법을 이용한 ZrC 성장에 잔류시간이 미치는 영향 (Residence Time Effect on the Growth of ZrC by Low Pressure Chemical Vapor Deposition)

  • 박종훈;정충환;김도진;박지연
    • 한국세라믹학회지
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    • 제45권5호
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    • pp.280-284
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    • 2008
  • In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not.

선형 공핍층 근사를 사용한 단채널 GaAs MESFET의 전류 전압 특성 연구 (A Study on the Current-Voltage Characteristics of a Short-Channel GaAs MESFET Using a New Linearly Graded Depletion Edge Approximation)

  • 박정욱;김재인;서정하
    • 대한전자공학회논문지TE
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    • 제37권2호
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    • pp.6-11
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    • 2000
  • 본 논문에서는 단채널 n형 GaAs MESFET 소자의 공핍층의 두께가 선형적으로 변한다는 근사를 적용하여 공핍층내의 2차원 프와송 방정식을 풀어 단채널 GaAs MESFET의 전류-전압 특성을 해석적으로 도출하는 모델을 제안하였다. 이 모델로부터 문턱 전압, 소오스와 드레인의 저항 및 드레인 전류식을 도출하였다 계산 결과로부터 전류-전압 특성 곡선에서 단채널 소자의 특성인 Early 효과를 설명할 수 있었고 소오스 접촉 저항과 드레인 접촉 저항에 의한 전압 강하도 설명할 수 있었다. 더욱이 본 모델은 소자 해석에 있어서 단채널 소자에만 국한되지 않고 장채널 소자의 특성을 해석하는 데에도 적용할 수 있었다.

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드레인 전압 종속 게이트-벌크 MOSFET 캐패시턴스 추출 데이터를 사용한 측면 채널 도핑 분포 측정 (Lateral Channel Doping Profile Measurements Using Extraction Data of Drain Voltage-Dependent Gate-Bulk MOSFET Capacitance)

  • 최민권;김주영;이성현
    • 대한전자공학회논문지SD
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    • 제48권10호
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    • pp.62-66
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    • 2011
  • 본 연구에서는 측정된 S-파라미터를 사용하여 드레인-소스 전압 Vds에 무관한 게이트-소스 overlap 캐패시턴스를 추출하고, 이를 바탕으로 deep-submicron MOSFET의 Vds 종속 게이트-벌크 캐패시턴스 곡선을 추출하는 RF 방법이 새롭게 개발 되었다. 추출된 캐패시턴스 값들을 사용한 등가회로 모델과 측정된 데이터가 잘 일치하는 것을 관찰함으로써 추출방법의 정확도가 검증되었다. 추출된 데이터로부터 overlap과 depletion 길이의 Vds 종속 곡선이 얻어졌으며, 이를 통해 drain 영역의 채널 도핑 분포를 실험적으로 측정하였다.

SOME OUTSTANDING PROBLEMS IN NEUTRON TRANSPORT COMPUTATION

  • Cho, Nam-Zin;Chang, Jong-Hwa
    • Nuclear Engineering and Technology
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    • 제41권4호
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    • pp.381-390
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    • 2009
  • This article provides selects of outstanding problems in computational neutron transport, with some suggested approaches thereto, as follows: i) ray effect in discrete ordinates method, ii) diffusion synthetic acceleration in strongly heterogeneous problems, iii) method of characteristics extension to three-dimensional geometry, iv) fission source and $k_{eff}$ convergence in Monte Carlo, v) depletion in Monte Carlo, vi) nuclear data evaluation, and vii) uncertainty estimation, including covariance data.

오염부지 위해성평가 시 불포화대 오염원 고갈을 고려한 토양유출수 농도 결정 (Leachate Concentration to Groundwater Considering Source Depletion for Risk Assessment in Vadose Zone of Contaminated Sites)

  • 장선우
    • 대한토목학회논문집
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    • 제40권6호
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    • pp.583-592
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    • 2020
  • 본 연구는 오염부지의 불포화대 내 오염물질의 농도가 지하수면에 유입되는 경로에서 토양유출수 농도의 변화를 연구하였다. 침투율의 범위를 통계적으로 분석하는 방식의 연구방법으로 위해성평가 대상 오염물질 13종을 대상으로 지하수 유입농도 감소의 경향성을 살펴보았다. 벤젠, 에틸벤젠, 톨루엔, 크실렌의 경우에는 낮은 토양분배계수값과 생분해로 인해서 시간이 지날수록 낮은 지하수 유입농도를 보이는 것으로 파악하였다. 생분해지수 및 침투율의 불확실성을 통계적으로 표현한 결과, 상대농도에서는 불확실성이 그다지 크게 나타나지 않았기 때문에 그 경향을 계산된 토양유출수 평균값으로 나타낼 수 있었다. 중금속의 경우는 지연계수가 상대적으로 크기 때문에 오염원에서의 토양유출수 농도가 수십년 동안에도 감소하지 않는 것으로 나타났다. 또한 청주 지역 현장 부지의 연간 침투율을 계산하여 현장특이적 침투율값으로 활용할 경우, 계산된 오염물질의 토양 유출수 농도를 시계열로 표현하여 국내 평균 침투율에 의한 상대농도 대표값과 비교하였다. 마지막으로 파이썬(Python) 프로그래밍 언어로 구성한 코드를 부록에 수록하여 타 연구자들이 오염원 고갈에 의한 용존 농도 감소를 계산하는데 활용할 수 있도록 하였다.