• International Journal of Fluid Machinery and Systems
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• v.9 no.1
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• pp.57-65
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• 2016

By high speed Liquid Droplet Impingement (LDI) on material, fluid systems are seriously damaged, therefore, it is important for the solution of the erosion problem of fluid systems to consider the effect of material in LDI. In this study, by using an in-house fluid/material two-way coupled method which considers reflection and transmission of pressure, stress and velocity on the fluid/material interface, high-speed LDI on wet/dry material surface is simulated. As a result, in the case of LDI on wet surface, maximum equivalent stress are less than those of dry surface due to damping effect of liquid film. Empirical formula of the damping effect function is formulated with the fluid factors of LDI, which are impingement velocity, droplet diameter and thickness of liquid film on material surface.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.177-179
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• 2004

$Pb(Zr_{0.4},Ti_{0.6})O3$, $Pb(Zr_{0.6},Ti_{0.4})O_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $100{\sim}120{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$ were approximately 676 and 1.4%, respectively.

• Journal of the Semiconductor & Display Technology
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• v.17 no.1
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• pp.62-65
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• 2018

In the era of the 4th Industrial Revolution, IoT products of various and specialized fields are being developed and produced. Especially, the generation of the artificial intelligence, robotic technology Multilayer substrates and packaging technologies in the notebook, mobile device, display and semiconductor component industries are demanding the need for flexible materials along with miniaturization and thinning. To do this, this work use FCCL (Flexible Copper Clad Laminate), which is a flexible printed circuit board (PCB), to implement FPCB (Flexible PCB), COF (Chip on Film) Use is known to be essential. In this paper, I propose a transfer device which prevents the occurrence of scratches by analyzing the mechanism of wrinkle and scratch mechanism during the transfer process of thin film material in which the thickness increases while continuously moving in air or solution.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.46-53
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• 2016

The structure of plasma electrolytic oxidation (PEO) coatings was investigated as a function of NaOH concentration in 0.06 M $Na_2SiO_3$ + 0.06 M $Na_3PO_4$ solution by using SEM and epoxy replica method. The PEO film was formed on AZ31 Mg alloy by the application of anodic pulse current with 0.2 ms width and its formation behavior was studied by voltage-time curves during the formation of PEO films. It was found that the addition of NaOH into $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ containing aqueous solution causes a decrease in the PEO film formation voltage, suggesting that dielectric breakdown of the PEO becomes easier with increasing $OH^-$ ion concentration in the solution. With increasing $OH^-$ ion concentration, thickness of the PEO film increased and surface roughness decreased. The size of pores formed in the PEO layer became smaller and the number of cracks in the PEO layer increased with increasing $OH^-$ ion concentration. Based on the experimental results obtained in the work, it is suggested that $OH^-$ ions in the solution can contribute not only to the dielectric breakdown but also to the formation of PEO films in the presence of $PO_4{^{3-}}$ and $SiO_3{^{2-}}$ ions in the solution.

• Corrosion Science and Technology
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• v.14 no.6
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• pp.261-266
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• 2015

The capacity of passive metal to repassivate after film damage determines the development of local corrosion and the resistance to corrosion failures. In this work, the repassivation kinetics of 316L stainless steel (316L SS) was investigated in borate buffer solution (pH 9.1) using a novel abrading electrode technique. The repassivation kinetics was analyzed in terms of the current density flowing from freshly bare 316L SS surface as measured by a potentiostatic method. During the early phase of decay (t < 2 s), according to the Avrami kinetics-based film growth model, the transient current was separated into anodic dissolution ($i_{diss}$) and film formation ($i_{film}$) components and analyzed individually. The film reformation rate and thickness were compared according to applied potential. Anodic dissolution initially dominated the repassivation for a short time, and the amount of dissolution increased with increasing applied potential in the passive region. Film growth at higher potentials occurred more rapidly compared to at lower potentials. Increasing the applied potential from 0 $V_{SCE}$ to 0.8 $V_{SCE}$ resulted in a thicker passive film (0.12 to 0.52 nm). If the oxide monolayer covered the entire bare surface (${\theta}=1$), the electric field strength through the thin passive film reached $1.6{\times}10^7V/cm$.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1418-1419
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• 2006

PZT(80/20) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about 60-65 ${\mu}m$. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT-6 thick film were 275 and 3.5, respectively. And the PZT-6 film shows the remanent polarization of 22.1 $C/cm^2$ and coercive field of 13.7 kV/cm.

• Journal of the Korean institute of surface engineering
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• v.19 no.3
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• pp.92-108
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• 1986

An electroplating on the lead frame fabricated from domestic copper plate was studied experimentally. In this study, nickel was plated on the thin copper lead frame and silver layer was coated on the nickel film in the cyanide electrolyte. The effect of process variables such as current density, plating time, coating thickness and flow rate of electrolytic solution on the properties of coating was investigated. Some samples on each step were fabricated during electroplating. The results obtained from polarization measurement, observation of SEM photograph, adhesion test of coating and microhardness test are as follows. On silver plating, polarization resistance of potentiostatic cathodic polarization curve is reduced as the flow rate of Ag electrolytic solution increases. And above resistance is also reduced when the minor chemicals of sodium cyanide and sodium carbonate are added in potassium silver cyanide bath. The reduced polarization resistance makes silver deposition on the cathode easy. An increase in the current density and the coating thickness causes the particle size of deposit to coarsen, and consequently the Knoop microhardness of the coating decreases. On selective plating an increase in the flow rate of plating solution lead to do high speed plating with high current density. In this case, the surface morphology of deposit is of fine microstructure with high Knoop hardness. An increasing trend of the adhesion of coating was shown with increasing the current density and flow rate of electrolytic solution.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.411-416
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• 2010

In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.

• Applied Chemistry for Engineering
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• v.8 no.5
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• pp.756-762
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• 1997

The experiment was carried out to fabricate alumina membrane which has a cylindrical pore structure by anodizing aluminium plate in sulfuric acid solution with the electrochemical technique. The aluminium plate for anodizing was prepared by the pretreatment process such as chemical, electro-polishing and thermal treatment. The pore size distribution and the film thickness of alumina membrane were investigated by the implementation of scanning electron microscope(SEM) and BET method. The results show that the oxide film has a geometrical structures like a Keller model and that the membrane has a uniform pore distribution. The pore size and the oxide film thickness are dependent on the anodizing process variables such as the electrolyte concentration, the reation temperature and the anodizing current density.

• Journal of the Korean Applied Science and Technology
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• v.17 no.1
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• pp.29-35
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• 2000

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of ${\pi}-A$ isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about $4.59{\sim}5.58$. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.